HES 1150 Search Results

C157C

Abstract: C154A C157 GE C156B sinewave inverter 5000 watt c157a C154 C158 CI57 C354
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 190 0 1000 1700, 160 0 150 0 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S

C159M

Abstract: GE C158N scr 250 amps 2000 Volt C157C CI58 C-48S sine wave inverter pic diode c159t 49/C159N C154A
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2 000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S

sine wave ups designing

Abstract: diode c445 SCR TN 22 1500 square wave UPS inverter GE SCR 1000 GE SCR 1000 AMP IC444 C358 C388 C395
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500

GE SCR 1000 AMP

Abstract: diode c648 C648T GE SCR 1000 C358 C385 C388 C395 C398 C648
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * 300 IO fO o <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500

Contextual Info: SN54AC563, SN74AC563 OCTAL DĆTYPE TRANSPARENT LATCHES WITH 3ĆSTATE OUTPUTS SCAS552C − NOVEMBER 1995 − REVISED OCTOBER 2003 D D SN54AC563 . . . J OR W PACKAGE SN74AC563 . . . DB, DW, N, NS, OR PW PACKAGE TOP VIEW 2-V to 6-V VCC Operation Inputs Accept Voltages to 6 V

scr prx

Abstract: lt742
Contextual Info: 74-C 0 1 6 7 1 POUEREX INC ^?4 DeT | T E m t B l D High Speed OQOlt.71 7 Silicon Controlled Rectifier 2 00 0 Volts T-25-20 C612 1150 Amps RMS AM PLIFYING GATE c The General Electric device type C612 is a new pressure mounted, high current SCR designed for power switching at high voltage and high frequen­

diode c648

Abstract: C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312
Contextual Info: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G G A TE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S

Contextual Info: SN54AC533, SN74AC533 OCTAL TRANSPARENT DĆTYPE LATCHES WITH 3ĆSTATE OUTPUTS SCAS555C − NOVEMBER 1995 − REVISED OCTOBER 2003 D SN54AC533 . . . J OR W PACKAGE SN74AC533 . . . DB, DW, N, NS, OR PW PACKAGE TOP VIEW 2-V to 6-V VCC Operation Inputs Accept Voltages to 6 V

OJ31

Abstract: A4T SOT23 YT-45 MPQ6427
Contextual Info: MOTOROLA SC 12E D I tBb?s5M ooatoa? i I XSTRS/R F M A X I M U M R A T IN G S Rating Sym bol Collector-Emitter Voltage MPQ6426 MPQ6427 V cEO Collector-Base Voltage VcBO Vdc 30 40 C A SE 646-06, STYLE 1 TO-116 Vdc 40 50 MPQ6426 MPQ6427 Emitter-Base Voltage Collector Current— Continuous

1N4564

Abstract: 1N3340 1N2804 1N2846 1N3305 1N3350 1N4549 1N4550 1N4556 1N4557
Contextual Info: DE~|b3b7a5S 007Ô0G7 7 MOTOROLA SC -CDIODES/OPTO} T -//- / ? 1N2804 thru 1N2846 MOTOROLA 6.8V thru 200V Case 54-05 SEM ICO NDUCTOR 1N3305 thru 1N3350 TECHNICAL DATA 6.8V thru 200V (Case 58-01) 1N4549thru 1N4556 3.9V thru 7.5V (Case 58-01) 1N4557thru 1N4564

Gunn Diode MA49156

Abstract: MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit MA49000 police radar detector x-band varactor diode MA49159
Contextual Info: M/A-COM SEMICONDUCTOR HE D I 5b4E514 DOOlim 4 I T-ÖJ-II MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO

Contextual Info: C4D20120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 25.5 A Z-Rec Rectifier Qc Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching

1n2620

Abstract: 1N4564 1N2625 1N2613 1N2626 in2819 1N2804 1N2846 1N3305 1N3350
Contextual Info: MOTOROLA SC { D I O D E S / O P T O * D E~|b3 b 7 a 5 S 0 0 7 Ô0 G7 T -//- / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N2804 thru 1N2846 1N3305thru 1N3350 1N4549 thru 1N4556 1N4557thru 1N4564 6.8V thru 200V Case 54-05 6.8V thru 200V (Case 58-01) 3.9V thru 7.5V (Case 58-01)

4053B

Abstract: 40538 demultiplexer 4000B
Contextual Info: 4053B TRIPLE 2-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER D E SC R IP TIO N — The 4053B is a Triple 2-Channel Analog M ultiplexer/Dem ultiplexer with a common Enable Input E . Each M ultiplexer/D em ultiplexer has tw o Independent Inputs/Outputs (Y 0 ,Y>|), a

C702 diode

Abstract: c712pn C702 C712 C712L C712PE C712PM C712PS C712PT RS-397
Contextual Info: IN VERTER SCR's SELECTO R GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 RMS CURRENT-AMPERES 700 800 850

Contextual Info: * HEX D-LATCH SYNERGY SY100S350 SEMICONDUCTOR FEATURES DESCRIPTION Max. transparent propagation delay of 900ps Min. Master Reset and Enable pulse widths of 100ps Iee min. o f-98 m A Industry standard 100K ECL levels Extended supply voltage option: V ee = -4.2V to -5.5V

Contextual Info: * QUINT AND/NAND GATE SYNERGY SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps Iee min. o f-6 0 m A Extended supply voltage option: V ee = -4 .2 V to -5 .5 V The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-performance ECL systems. This

diode ba 241

Abstract: rd100ifp 4069 NOT GATE IC 28-UNF-2A
Contextual Info: PACKAGE DIMENSIONS 3/4” PF Isolated TO-5 (Non-lsolated) 3/4” PFS (Isolated) 3/4” PF/T03 (Isolated) CASE TEM PERA TU RE " M EA S U R E M EN T POIN T •+-CASI TEMPERATURE 1 - * MEASUREMENT POIN1 iS AT THE GENTE R OF BASE , U 0 MOUSIN G HARDWARE

General electric SCR c39

Abstract: c180 scr C180 C380 C380A C380B C380C C380D C380E C390
Contextual Info: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE C180 C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM *,wv 1300-1800 700 1700 1500-2000 1 735 850 550 @ 6 5 JC 500 @ 65°C 850 550 @65°C 550 @ 57°C 850 135 @ 80°C 380 235 /• 80°C 180 @ 80°C

TL 0621 P

Abstract: t4 0560 c TL 0621 N T4 0560 M39006/22-02S1
Contextual Info: I CLR79 MIL-C-39006/22 Wet Tantalum Capacitors M allorY All Tantalum Case Hermetically Sealed GENERAL SPECIFICATIONS Up to 3 Volts Reverse Capability Operating Temperature: -55°C to +125°C Higher Ripple Current Capability Voltage Range: 6 to 125 VDC Capacitance Range:

Contextual Info: ADS7810 ADS 781 12-Bit 800kHz Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION ● 1.25µs THROUGHPUT TIME ● STANDARD ±10V INPUT RANGE The ADS7810 is a complete 12-bit sampling A/D using state-of-the-art CMOS structures. It contains a complete 12-bit capacitor-based SAR A/D with inherent S/H, reference, clock, interface for microprocessor

teac FD-05hg

Abstract: sis 962 SIS 651 SIS651 FD-05hg Chroma 63030 SiS 651 chipset teac FD 3.5 fd-05hg ene1410 teac FD 5.25
Contextual Info: REVISION SHEET TITLE G550 Internal Spec. DCN No. Rev. Originator 000 黃志明 DOCUMENT NO.: 342-3-G550-01 REV.: 0 PAGE : 2 Details of Change Date Original release 5/6/02 Page Rev. Page Rev. 1 32 2 33 3 34 4 35 5 36 6 37 7 38 8 39 9 40 10 41 11 42 12 43 13

C440

Abstract: C440E C440M C440N C440S C440T C441 C601 C602 C701
Contextual Info: PHASE CONTROL SCR's 2 7 6 .1 276 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t R M S . M a x . average on-state c urrent @ 1 8 0 ° T (A V ) conduction (A ) @ T q , C602 C 601 C 441 C440 C 701 C 702 1 7 0 0 -2 6 0 0

circuit diagram digital blood gas analyzer

Abstract: circuit diagram blood gas analyzer D link schematic circuit diagram adsl modem board circuit diagram blood analyzer glucose monitor schematic MARKING 327 sot23-6 headset mtbf data and video recorder mtbf d link schematic circuit diagram adsl router board marking A75240
Contextual Info: YZB-4 DBV-6 www.ti.com PW-8 SN65220 SN65240 SN75240 P-8 SLLS266F − FEBRUARY 1997 − REVISED JULY 2004 USB PORT TRANSIENT SUPPRESSORS FEATURES D Design to Protect Submicron 3-V or 5-V Circuits from Noise Transients APPLICATIONS D USB 1.1 Host, Hub, or Peripheral Ports