HEPR Search Results

Contextual Info: HEPR2503 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.33p C1/C2 Min. Capacitance Ratio3.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)280m Semiconductor Material Package StyleTO-92 Mounting StyleT

Contextual Info: HEPR0082 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25ï V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0086 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25ï V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0092 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25ï V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0100 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0098 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25ï V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0080 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25ï V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0084 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25ï V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0054 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)75’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0050 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)75’ V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0104 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0102 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0081 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25ï V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

HEP-R0053

Contextual Info: HEPR0053 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)75’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: HEPR0106 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct

2564 eprom

Abstract: TMS2564 2564 eprom texas tms2564 eprom TI 2564 eprom TMS2564-35 TMS2564-45 TMS2564 equivalent
Contextual Info: TM S2564, SM J2564 65,536-B IT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES M A Y 1981 Single + 5 -V P o w e r Supply • Pin C o m p a tib le w ith Existing R O M s and EPR O M s I8 K , 1 6 K , 3 2 K , and 6 4 K Vpp £ si C 2 Vc c t c • J] O rganization . . . 8 1 9 2 X 8

Contextual Info: J S L M2TM ANAL OGRADI O 137162MHZ|150174MHZ|450470MHZ Robus tCommuni c a onsi naCompac tPac k age J S L M2t e l e me t r yr a di osoffe rt het hi r dg e ne r aonde s i g nofapr ov e nRFpl a or m r a di oi nac ompa c tpa c k a g et ha tde l i v e r swi r

RAV-401PWZ

Abstract: spp-244 Okaya surge protector Okaya UL-1449 R-A-V-781
Contextual Info: SURGE TRAP FILTER @ OKAYA M R • A • V-PWZ, QWZ SERIES Safety Agency : Standard R •A-V-PWZ Series UL File No. E143446 :UL-1449 R-A-V-QW Z Series 5 6 .5 ± 0 .5 o : in IT o o -H 0 0 CN CO jI F 12 A B 4 6 + 0 .5 I I 12 I A : 9 ± 0 .2 B :1 3 ± 0 .2 Unit: mm

1BKB

Abstract: HY62B1
Contextual Info: •HYUNDAI 1. TABLE OF CONTENTS T A B L E DF C O N TEN T S Index. 2. P R O D U C T Q U ICK R E F E R E N C E GUIDE □ r d B r in g Q u ic k 3. I n f o r m a t i o n . 3

fma16n60e

Abstract: FMA16N60E,16N60E
Contextual Info: DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

10N60

Abstract: 10n60e gcu 101
Contextual Info: DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

FMA06N

Abstract: fma06n60e 06N60E
Contextual Info: DATE DRAWN Aug.-31-'07 CHECKED Aug.-31-'07 CHECKED Aug.-31-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

08n50e

Abstract: 08N50E mosfet 08n50
Contextual Info: DATE DRAWN Aug.-31-'07 CHECKED Aug.-31-'07 CHECKED Aug.-31-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor