HBAV99
Abstract: DIODE SMD MARKING 5.C
Contextual Info: HI-SINCERITY Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2004.08.26 Page No. : 1/4 MICROELECTRONICS CORP. HBAV99 HIGH-SPEED SWITCHING DIODE Description SOT-23 The HBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching
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HMBT2369
Abstract: 100MHZ hE68
Contextual Info: HI-SINCERITY Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2369 is designed for general purpose switching and amplifier applications.
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he6834hmbt2369ot-23183oc+4217oc260oc100mhzhe68
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HBAV99
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2002.10.24 Page No. : 1/3 HBAV99 HIGH-SPEED SWITCHING DIODE Description The HBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
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he6834hbav99ot-23 |
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HMBT2369
Abstract: 100MHZ
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 1/3 HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2369 is designed for general purpose switching and amplifier applications.
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he6834hmbt2369ot-23100mhz |
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