HE601 Search Results

HJ41C

Abstract: Y2 MARKING marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

Contextual Info: HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

HJ772

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.08.12 Page No. : 1/4 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

HJ50

Abstract: vce 500v NPN Transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6016 Issued Date : 1996.04.12 Revised Date : 2002.02.26 Page No. : 1/3 HJ50 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ50 is designed for line operated audio output amplifier switch mode power supply drivers and other switching applications.

HJ882

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2003.08.12 Page No. : 1/4 HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

HJ340

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6012-B Issued Date : 1996.04.12 Revised Date : 2000.11.01 Page No. : 1/3 HJ340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ340 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.

HJ127

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2003.01.17 Page No. : 1/3 HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings Ta=25°C

HJ772

Abstract: H*772
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 1/4 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

HJ882

Abstract: HE6014 HJ882Q
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 1/4 HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

hj882

Abstract: HE601 a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HE6014 Issued Date : 1996.04.12 Revised Date : 2006.12.06 Page No. : 1/5 MICROELECTRONICS CORP. HJ882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ882 is designed for using in output stage of 20 W audio amplifier, voltage regulator,

HJ42C

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6013-B Issued Date : 1996.04.12 Revised Date : 2000.11.01 Page No. : 1/3 HJ42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ42C is designed for use in general purpose amplifier, low speed switching applications.

HJ41C

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2002.03.04 Page No. : 1/3 HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.

HJ210

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6011-B Issued Date : 1996.03.12 Revised Date : 2000.11.01 Page No. : 1/2 HJ210 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ210 is designed for low voltage, low-power, high-gain audio amplifier applications.

hj772

Abstract: Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2008.06.19 Page No. : 1/5 MICROELECTRONICS CORP. HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 10 W audio amplifier, voltage regulator,

A1 marking code amplifier

Abstract: HJ42C
Contextual Info: HI-SINCERITY Spec. No. : HE6013 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ42C is designed for use in general purpose amplifier, low speed switching applications.

HJ1109

Abstract: HJ1609
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1109 PNP EPITAXIAL PLANAR TRANSISTOR Description • Low frequency high voltage amplifier. • Complementary pair with HJ1609. Absolute Maximum Ratings Ta=25°C

HE6018-B

Abstract: HJ1109 HJ1609 HJ-160
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6018-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1609 NPN EPITAXIAL PLANAR TRANSISTOR Description • Low frequency high voltage amplifier. • Complementary pair with HJ1109. Absolute Maximum Ratings Ta=25°C