HCTS20DMSR Search Results

HCTS20D

Abstract: HCTS20DMSR HCTS20HMSR HCTS20K HCTS20KMSR HCTS20MS
Contextual Info: HCTS20MS TM Radiation Hardened Dual 4-Input NAND Gate September 1995 Features • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day

Contextual Info: ÇXI H A R R HCTS20MS I S S E M I C O N D U C T O R Radiation Hardened Dual 4-Input NAND Gate September 1995 Pinouts Features 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-183S CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si)

HCTS20D

Abstract: HCTS20DMSR HCTS20HMSR HCTS20K HCTS20KMSR HCTS20MS
Contextual Info: HCTS20MS Radiation Hardened Dual 4-Input NAND Gate September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-183S CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

HAA0-51405R4649

Abstract: HAA9 HAA0-51405R4347 TA12004 haa9p HFA3624IA1K HAA0-51045R4194 a1t diode a1y PACKAGE HFA3763IN96
Contextual Info: Intersil Corporation P.O. Box 883 2401 Palm Bay Road Palm Bay, Florida 32905 321 724-7000 March 30, 2001 To: Our Valued Customers Attention: Procurement Manager Subject: PLC#01001 Report 1 - Quarterly Product Withdrawal Notice – Standard Products Intersil Corporation is pleased to have been your supplier for the products identified in the attached list