HCT80 Search Results

HCT800

Contextual Info: OPTEK TECHNOLOGY INC 57E D • bT^asaa Gooioaa 3 ■ Preliminary Product Bulletin M ay 1989 O PTEK Surface Mount Complementary Pair MOSFET Type HCT800 'T - Z S - ° \ t> Features Absolute M axim u m R atings TA = 25t,C unless otherwise noted • Surface mountable on ceramic or printed

HCT801TX

Abstract: Dual Enhancement Mode MOSFET
Contextual Info: 0 OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source

HCT801

Abstract: VN0109 VP0109
Contextual Info: HCT801 MECHANICAL DATA Dimensions in mm inches COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS VDS = 90V ID(on) N-Channel = 1.9A P-Channel = 0.5A 1.40 ± 0.15 (0.055 ± 0.006) 2

VP1008

Abstract: 2N6661 HCT802 HCT802TX HCT802TXV
Contextual Info: OPTEK P ro d u c t B u lle tin HCT802 S e p te m b e r 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV F ea tu res A b s o lu te M a xim u m R a tin g s • 6 pad surface mount package • VDs = 90V Drain-Source Voltage. go V

Contextual Info: .Q P I E K Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features Absolute Maximum Ratings • 6 pad surface mount package • V Ds = 90V Drain-Source Voltage. 90 V

Contextual Info: Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features Absolute Maximum Ratings • • • • 6 pad surface mount package VDS = 90V RDS on <5Ω ID(on) N-Channel = 1.5A P-Channel = 1.1A • Two devices selected for VDS, ID(on)

2N6661

Abstract: HCT802 HCT802TX HCT802TXV VP1008
Contextual Info: Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features Absolute Maximum Ratings • 6 pad surface mount package • VDS = 90V • RDS on <5Ω • ID(on) N-Channel = 1.5A Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V

Contextual Info: 0 OPTEK Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features Absolute Maximum Ratings • 6 pad surface mount package • Vds = 90V Drain-Source Voltage. 90 V

P-channel Dual MOSFET VGS -25V

Abstract: b 1624 transistor P-channel MOSFET VGS -25V
Contextual Info: 0 OPTEK Product Bulletin HCT802 May 1993 Dual Enhancement Mode MOSFET Type HCT802 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V

HCT801

Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
Contextual Info: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V

Contextual Info: 57E D OPTEK TE CH NOL OGY INC Product Bulletin • bT'iasaa Dooioaa 3 ■ Preliminary May 1989 OPTEK Surface Mount Complementary Pair MOSFET Type HCT800 ' T ' 3 S cIO Features A bsolute M axim um Ratings TA = 25°C unless otherwise noted • Surface mountable on ceramic or printed

Contextual Info: @.OBIEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package • V ds = 90V • lD o n N-Channel = 1.9A P-Channel = 0.5A • Two devices selected for V ds, switching time, and capacitance

InfraRed Associates

Abstract: InfraRed Associates hct-100 HgCdTe Infrared Preamplifiers metal detectors circuits HCT-100 X1010 missile HCT-40 HCT-55
Contextual Info: SPECIFICATIONS FOR STANDARD DETECT! InfraRecJ ASSOCIATES, Inc 70 > 50 1000 Route #130, Cranbury, NJ 08512 609 395-7600 Telex 642282 H H o ni MODEL SIZE (inches) Photoconductive HgCdTe detectors fabricated by Infrared Associates, Inc. and optimized for operation in the 8-13 micron

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

HCT-1000F

Abstract: HCT-100LP TKC 800F HCT-2000LF TBC100AP HCT-25A05 HCT-200AP HCT-300LTP HCT-100 25A05
Contextual Info: HCT SERIES Features • • • • • • • • • • • DC, AC Hall Effect Current Transducers Open Loop and Closed Loop operation Modes Wide range of primary current measurement s, from 5 A up to 1200 A RMS. Wide range of frequencies Band Width, Typically from 0 up to 50,100 and 200 kHz.

molex connector 5045

Abstract: molex 5045 HCT-1000F hct mos
Contextual Info: CUSTOMER CUSTOMER CODE PART DESCRIPTION HALL EFFECT CURRENT TRANSDUCER OPEN LOOP HCT 800A/4V INTERNAL CODE HCT-F DATE 23/08/10 EDITION 1 DOCUMENT NAME HCT-F_1.doc PAGE 1/9 HALL EFFECT CURRENT TRANSDUCER OPEN LOOP HCT 800A/4V. HCT-800F NOTES All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisati on.

HCT-15DS5

Abstract: HCT-300LTP DCT-700A 951 a05 HCT-25DS5 HCT-2000LF HCT-200AP Bsr5 hct 136 HCT-06DS5
Contextual Info: BACK O FFICES France: Dicel Electronics Michigan:Giesting & Associates Michigan HEAD Q UARTER: Spain New Hampshire: PowerRep Germany: Ineltek GmbH PREM O C O R PO R A TIO N S.L C/. Conchita Supervia, 13 08028 Barcelona S Phone: +34 934 098 980 Fax: +34 934 906 682