HB 101 A Search Results

x050

Abstract: MIL-PRF-123
Contextual Info: STANDARD SMT CHIP P/N BREAKDOWN 1206 N 472 J 101 N X050 H T M - HB Marking Case Size M = Marked None = Unmarked Marking not available on sizes 0603 and below Dielectric Code Code EIA Class Packaging N B X Y COG/NP0 X7R BX Y5V Ultra Stable Stable MIL General Purpose

M1F60

Contextual Info: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Package : M1F Unit : mm M 1 F 800V 1A + - — N— 2 .8 101 it V — F t - 9 Cathode mark 45 £1 B64 l!i|P "3 7 ? ° 00 wmm «T 116 2 n y HB-g- W Type No. Date code

f540ns

Abstract: active brake mosfet switch BLDC Motor
Contextual Info: Application Note 1829 Author: Richard Garcia HIP4086 3-phase BLDC Motor Drive Demonstration Board, User’s Guide Introduction analog signal proportional to the motor current is available on board as a design reference. The HIP4086DEMO1Z is a general purpose 3-phase BLDC

CLA 80 E 1200

Abstract: VG2B
Contextual Info: CLA 30 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip

TEA1713

Abstract: 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934
Contextual Info: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 01 — 22 March 2010 Application note Document information Info Content Keywords TEA1713, PFC, burst mode, adapter, LCD TV, Plasma TV, resonant, converter. Abstract The TEA1713 integrates a controller for Power Factor Correction PFC

cla30e1200pb

Contextual Info: CLA 30 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip

DOD-A-82720

Abstract: FR4 epoxy dielectric constant 4.2 DP-190 DP-100 Plus DP270 DP460 DP-420 3M DP100
Contextual Info: 0362220 Epoxy-Hotmelt 3/30/04 11:29 AM Page 1 High-performance adhesives for demanding electronics applications. With the ever-increasing sophistication of electronics, you need the most dependable and versatile methods for their fabrication and assembly. 3M Scotch-Weld epoxies and Jet-melt

Contextual Info: HB 56RW872ES Series 8,388,608-Word x 72-Bit ECC High Density Dynamic RAM Module HITACHI Preliminary Rev. 0 Dec. 19, 1995 The HB56RW872ES belongs to 8 Byte DIMM (Dual In-Line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

Contextual Info: CERAMIC CHIP CAPACITORS INTRODUCTION Ceramic chips consist of formulated ceramic dielectric materials which have been fabricated into thin layers, interspersed with metal electrodes alternately exposed on opposite edges of the laminated structure. The entire structure is then fired at high temperature to

F-2100

Abstract: F-2102 F-2103 F-2105
Contextual Info: CERAMIC CHIP CAPACITORS INTRODUCTION Significant Figure of Temperature Coefficient Working Voltage: Refers to the maximum continuous DC working voltage permissible across the entire operating temperature range. The reliability of multilayer ceramic capacitors is not extremely sensitive to

k 629

Abstract: F-2100 F-2102 F-2103 F-2105 MLCC rework F2110
Contextual Info: CERAMIC CHIP CAPACITORS INTRODUCTION Significant Figure of Temperature Coefficient Working Voltage: Refers to the maximum continuous DC working voltage permissible across the entire operating temperature range. The reliability of multilayer ceramic capacitors is not extremely sensitive to

Contextual Info: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2         Applications    Battery Powered 3G Handsets GSM850/EGSM900/DCS/

smd diode HB

Abstract: BA891 CGY2014ATW HTSSOP20 philips application
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW FEATURES GENERAL DESCRIPTION

TA7261P

Abstract: TA7261
Contextual Info: TA7261P DC MOTOR DRIVER 2 PHASE Bi-DIRECTIONAL Unit in mm The TA7261P is a 2 Phase Bi-Directional type Motor Driver 1C designed for use Tape Deck, VTR and Micro Floppy Disk Motor Drivers. It contains Output Power Drivers, Position Sensing Amplifiers, Control Amplifier and Voltage Regulator

marking code HB

Abstract: Mark 10A
Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

Contextual Info: CERAMIC CHIP CAPACITORS INTRODUCTION Significant Figure of Temperature Coefficient Working Voltage: Refers to the maximum continuous DC working voltage permissible across the entire operating temperature range. The reliability of multilayer ceramic capacitors is not extremely sensitive to

SC321

Abstract: SC321-2 Mark 10A 10A200V
Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

sha1 hash

Abstract: A999 10K50S-1
Contextual Info: HammerCores by Altera White Paper SHA-1 Hash Function Introduction The Hammercores by Altera SHA-1 hash function implements the SHA-1 message-digest algorithm, as described in ® FIPS PUB 180-1, and is optimized for Altera FLEX 10KE and APEX 20K devices.

fca173

Abstract: h2lb FCA175 BA891 CGY2014TT philips rf manual HTSSOP20
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES

TVC 2 HB

Contextual Info: BX DIELECTRIC BX characteristics are identical to X7R dielectric, with the added restriction that the Temperature-Voltage Coefficient TVC is not to exceed -25% ∆C at rated voltage, over the operating temperature range (-55°C to 125°C). NOVACAP manufactures chips using dielectrics with minimal voltage coefficient and layer thickness designed to meet BX requirements.

RF3230

Contextual Info: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features         Applications    Battery Powered 3G

3g UMTS signal Schematic Diagram

Contextual Info: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2         Applications    Battery Powered 3G Handsets GSM850/EGSM900/DCS/