HAMAMATSU 256 CHANNEL PHOTODIODE Search Results
HAMAMATSU 256 CHANNEL PHOTODIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
TLP292-4 |
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Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 | Datasheet | ||
TLP295-4 |
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Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 | Datasheet | ||
TC7PCI3212MT |
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2 Differential Channel, 2:1 multiplexer/demultiplexer, SPDT, TQFN20, -40 to 85 degC | Datasheet | ||
TLP294-4 |
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Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 | Datasheet |
HAMAMATSU 256 CHANNEL PHOTODIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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R800-10-012-20-001
Abstract: S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 C9118 S8865-128 S8865-256
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S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 SE-171 KMPD1071E04 R800-10-012-20-001 S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 S8865-128 S8865-256 | |
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 B1201, KMIR1011E11 | |
Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, |
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S8865-64/-128/-256 S8866-64-02/-128-02 C9118 SE-171 KMPD1071E03 | |
256CH
Abstract: 9 ELEMENT photoDIODE ARRAY simple Photodiode
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S8865-64/-128/-256 S8865-64/-128/-256 C9118 S8865-256. SE-171 KMPD1071E02 256CH 9 ELEMENT photoDIODE ARRAY simple Photodiode | |
R7600U-300
Abstract: MOST150 S11518
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G11608 G11608-256DA G11608-512DA DE128228814 R7600U-300 MOST150 S11518 | |
Contextual Info: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be |
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S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 KMPD1071E08 | |
Contextual Info: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be |
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S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 provid33- SE-171 KMPD1071E07 | |
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08 | |
detector ingaasContextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E09 detector ingaas | |
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08 | |
G9205Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS |
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G9211 G9214 G9205 G9208 G9214/G9205 SE-171 KMIR1011E07 | |
Contextual Info: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process |
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S11865-64/-128/-256 S11866-64-02/-128-02 S11865/S11866 S8865/S8866 B1201, KMPD1134E04 | |
Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed |
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S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01 | |
S8865-256GContextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed |
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S8865-256, S8865-256G S8865-256 S8865-256G SE-171 KMPD1087E01 | |
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Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9821 series Receptacle type, 1.3/1.55 µm, 2.5 Gbps G9821 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module. |
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G9821 STM-16/OC-48) SE-171 KIRD1085E01 | |
hamamatsu 256 channel photodiodeContextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9821 series Receptacle type, 1.3/1.55 µm, 2.5 Gbps G9821 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module. |
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G9821 STM-16/OC-48) SE-171 KIRD1085E01 hamamatsu 256 channel photodiode | |
Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9816 series Receptacle type, 1.3/1.55 µm, 1.25 Gbps G9816 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module. |
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G9816 SE-171 KIRD1084E01 | |
Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9821 series Receptacle type, 1.3/1.55 µm, 2.5 Gbps G9821 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module. |
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G9821 STM-16/OC-48) SE-171 KIRD1085E01 | |
G8194
Abstract: G8194-21 G8194-22 G8194-23 G8194-32 InGaas PIN photodiode, 795 ,sensitivity TIA 604-10
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G8194 SE-171 KIRD1033E02 G8194-21 G8194-22 G8194-23 G8194-32 InGaas PIN photodiode, 795 ,sensitivity TIA 604-10 | |
Receptacle LC
Abstract: pin Photodiode 2 GHz G8194 G8194-21 G8194-22 G8194-23 G8194-32 TIA 604-10 FC Receptacle pin photodiode 20 ghz
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G8194 SE-171 KIRD1033E04 Receptacle LC pin Photodiode 2 GHz G8194-21 G8194-22 G8194-23 G8194-32 TIA 604-10 FC Receptacle pin photodiode 20 ghz | |
photodiode InGaAs NEPContextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G9816 series Receptacle type, 1.3/1.55 µm, 1.25 Gbps G9816 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module. |
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G9816 SE-171 KIRD1084E01 photodiode InGaAs NEP | |
G10477-21Contextual Info: PHOTODIODE InGaAs PIN photodiode with preamp G10477 series Receptacle type, 1.3/1.55 µm, 1.25 Gbps G10477 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode and a high-speed preamp integrated in a receptacle module. |
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G10477 SE-171 KIRD1084E02 G10477-21 | |
G9843
Abstract: G9843-21 G9843-22 G9843-32 sensitivity dB photodiode pin
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G9843 SE-171 KGPD1016E02 G9843-21 G9843-22 G9843-32 sensitivity dB photodiode pin | |
S8221
Abstract: G8337
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S8221/G8337 IEEE1394 S8221 G8337 SE-171 KPIN1043E04 |