HA 1370* IC Search Results
HA 1370* IC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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54F193/BEA |
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54F193/BEA - Dual marked (M38510/34304BEA) |
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PEF24628EV1X |
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PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip | |||
ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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ICL8212MTY/B |
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Programmmable High Accuracy Voltage Detecor |
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LM710CH |
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LM710 - Comparator, 1 Func, 5000uV Offset-Max, 40ns Response Time, BIPolar, MBCY8 |
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HA 1370* IC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Panasonic IGBTs 2PG352 Insulated Gate Bipolar Transistor • Features • High breakdown voltage : V c e s = 4 0 0 V • Large current control possible : Ic Peak = 150A • Housing in the surface mounting package possible ■Applications • For camera flash-light |
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2PG352 | |
HA 1370* ic
Abstract: HA 1370
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Contextual Info: MOTOROLA Order this document by MC10EP33/D SEM ICONDUCTO R TECHNICAL DATA Product Preview ~ M C 10EP33 4 D ivider The MC10EP33 is an integrated + 4 divider. The differential clock inputs and the V b b allow a differential, single-ended or AC coupled interface to the device. If used, the V b b output should be bypassed to |
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MC10EP33/D 10EP33 MC10EP33 440ps | |
TDA2148
Abstract: Tda 403 2148 AM/TFK 2148
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Q67000-A2476 P-DIP-14 TDA2148 Tda 403 2148 AM/TFK 2148 | |
mex gpf
Abstract: MRF5177 gpf k x2 gpf k x2 mex gpf PORCELAIN
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MRF5177 mex gpf MRF5177 gpf k x2 gpf k x2 mex gpf PORCELAIN | |
Contextual Info: EPSON P F 600-03 SEDI 620 Dot Matrix High Duty LCD Driver • 128-bit High Voltage Resistant Output • 1/100 to 1/300 in Display Duty • CMOS High Voltage Resistant Process • DESCRIPTION The SED1620Doa is an 80 output segment column driver, used to driver large-capacity dot matrix LCD panels |
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128-bit SED1620Doa SED1631D SED1632D SED1600F 620Doa- 620Doa SED1620D | |
Contextual Info: November 1996 Revision 1.0 DATA S H E E T FUJITSU - EDC8B V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module |
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64MByte EDC8BV724 64-megabyte 168-pins, MB81V1 74LVT16244 168-pin | |
Contextual Info: S u p e rte x in c HV21716 HV21816 . Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information_ Package Options z z > CL CL I > Operating VPP 28-lead plastic chip carrier Die 40V to 80V 160V HV21716PJ HV21716X 80V to 150V |
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HV21716 HV21816 28-lead HV21716PJ HV21716X HV21816PJ HV21816X HV20220 10jxA 10MHz | |
Contextual Info: HV217 HV218 Supertex inc. Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information_ Package Options Operating Vpp - v NfJ Die in waffle pack 24-pin plastic DIP 28-lead plastic chip carrier 28-lead SOW 40V to 80V |
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HV217 HV218 HV21716X HV21816X 24-pin HV21716P HV21816P 28-lead HV21716PJ HV21816PJ | |
Contextual Info: M HV217 HV218 Supertex inc. Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information Package Options Operating Vpp - V nn Die in waffle pack 24-pin plastic DIP 28-lead plastic chip carrier 28-lead SOW 40V to 80V 160V HV21716X HV21716P |
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HV217 HV218 24-pin 28-lead 28-lead HV21716X HV21716P HV21716PJ HV21716WG HV21816X | |
chipset pinout
Abstract: outline pro 408
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DW9255 42MHz DS3861 DW9255 GP2000 GP2010 GP2015 42MHz. chipset pinout outline pro 408 | |
Contextual Info: SONY CORP/COMPONENT PRODS 50E D son y. • &3flE363 0003^37 T! P in A ss ig n m e n t The CXB1143Q is an ultra high speed monolithic ECL 1C, which contains four 4: 1 multiplexers foll owed by D type flip flops. The data select So, Si inputs determine which data is enabled. The selected |
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3flE363 CXB1143Q 24pin QFP-24M-S01) 32pin QFP-32C-L01) 32pin QFP-32M-L02) | |
Contextual Info: CF5761 series CMOS Analog Clock IC with Alarm Function OVERVIEW The CF5761 series are analog clock ICs with alarm functions that derive their timing from a standard 32.768kHz oscillator element. Two kinds of alarm output are available and can be selected using a control pin. |
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CF5761 768kHz Tokyoi104-0032 iC81-3-5541-6501 iC81-3-5541-6510 NC0016BE | |
alarm clock sweep function ic
Abstract: 567 tone 226 35K capacitor CF5761 CF5761CA CF5761EA CF5761HA
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CF5761 768kHz NC0016BE alarm clock sweep function ic 567 tone 226 35K capacitor CF5761CA CF5761EA CF5761HA | |
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Contextual Info: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-776A Z Rev. 1.0 Apr. 23,1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The |
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HB56SW864ES-6/7 608-word 64-bit ADE-203-776A HB56SW864ES HB56SW 864ES 16-Mbit HM51W16405) 16-bit | |
Hitachi HA 1370
Abstract: Nippon capacitors
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HB56SW864ES-6/7 608-word 64-bit ADE-203-776A HB56SW 864ES B56SW 16-bit 20-bit Hitachi HA 1370 Nippon capacitors | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Registered Hex ECL/TTL Translator M C 10H 605 M C 100H 605 The MC10/100H605 is a 6 -b it, registered, dual supply ECL to TTL translator. The device features differential ECL inputs for both data and clock. The TTL outputs feature balanced 24mA sink/source capabilities for |
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MC10/100H605 DL122 | |
Contextual Info: 3.3V CMOS 16-BIT TRANSPARENT LATCH IDT54/74FCT163373/A/C Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CM OS Technology The FCT163373/A/C 16-bit transparent D-type latches are built using advanced dual metal CM OS technology. These |
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16-BIT IDT54/74FCT163373/A/C FCT163373/A/C 4A55771 MIL-STD-883, | |
IRLD110
Abstract: 9635A
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IRLD110 IRLD110 9635A | |
HS-3530RHContextual Info: fü HARRIS HS-3530RH S E M I C O N D U C T O R Low Power, Radiation Hardened Programmable Operational Amplifier April 1995 Pinout Features HS2-3530RH 8 PIN METAL CAN TOP VIEW • Radiation Environment - Neutron Fluence 0> 5 x 1012 n/cm2 (E > 10KeV) - Gamma Rate Ci) 1 x 109 RAD (Si)/s |
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HS-3530RH HS2-3530RH 10KeV) 100kHz MIL-STO-1835, HS-35 00L1244 HS-3530RH | |
2281 led driver
Abstract: LM LED driver high voltage 250V mosfet BUZ 326 BUZ MOSFET VOLTAGE LEVEL RELAY SM 125 220
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MH89625C 200i2 680i2//0 560C2 MH896-281 MH80625C MH80625C. 2281 led driver LM LED driver high voltage 250V mosfet BUZ 326 BUZ MOSFET VOLTAGE LEVEL RELAY SM 125 220 | |
Nippon capacitorsContextual Info: S— ' M- HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-776A Z Rev. 1.0 Apr. 23, 1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The |
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HB56SW864ES-6/7 608-word 64-bit ADE-203-776A HB56SW864ES 16-Mbit HM51W16405) 16-bit 74ALVCH16244) Nippon capacitors | |
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS FW Miniature Sized, For Audio Equipment xiickicon 3 series Smaller For Audio Use FG Anti-Solvem Feature • Standard miniature sized series for general audio products, taking the same designing concept as “ Fine Gold” MUSE into consideration. |
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120Hz, 16X35 10X12 | |
HS-3530RHContextual Info: HS-3530RH HARRIS S E M I C O N D U C T O R Low Power, Radiation Hardened Programmable Operational Amplifier August 1995 Features Pinout 8 LEAD METAL CAN PACKAGE CAN MIL-STD-1835 MACY1-X8 • R adiatio n E n viro nm en t - N eutron F lu en ce (O ) 5 x 1012 n /c m 2 (E > 10K eV ) |
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HS-3530RH MIL-STD-1835 100kH 00L3413 HS-3530RH |