HA 1105 R Search Results

Contextual Info: LH Series • Features • Lifetime:125℃,1000 hrs • Wide temperature range for LZ • Low ESR • Low Impedance ■ • • • • • • Specifications Items Characteristics ±20% M (120Hz,20℃) 6.3~25 VDC -55 ~ +125℃ Capacitance Tolerance Rated Voltage Range (WV)

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS n ic K ic o n Chip Aluminum Electroiytic Capacitors c o Anti-cleaning solvent O perating T em p eratu re Range "C Long life A pplications Low impedance 2 3 o> <*c o o U) —} Standard type « .2 "C m Features Smaller-sized & ,

Contextual Info: MT24D236 2 MEG X 36. 4 MEG x 18 DRAM MODULE M IC R O N 2 MEG DRAM MODULE X 36, 4 MEG X 18 FAST PAGE MODE MT24D236 LOW POWER, EXTENDED REFRESH (MT24D236 L) FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process

Contextual Info: aûD » • aa35bQ5 o o m a i o 88 D 14810 « sieù D . BUZ83A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Vos Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n Description SIPMOS, N-channel, enhancement mode

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm INDUSTRIAL APPLIC ATIONS H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . Uni t R E L A Y D R IV E ,M O T O R DR IVE AND DC-DC CONVER TER A P P L I C A T I O N S . in mm

Contextual Info: MICRON I 2 MEG 36, 4 MEG X 2 MEG X MT24D236 18 DRAM MODULE 36, 4 MEG 18 X FAST PAGE MODE MT24D236 LOW POWER, EXTENDED REFRESH (MT24D236 L) FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS m e , h i con Miniature Aluminum Electrolytic Capacitors O Page BT tow Impedance Longlife AQ PB — 40~ - - H 25‘C High reliability For industrial equipment num ber - 40~ - H O E C Miniature type Permissible - 40— H O E t

Contextual Info: * SY10480-8 SY10480-10 16K x 1 ECLRAM SYNERGY SEM ICO NDUCTO R DESCRIPTION FEATURES The Synergy SY10480 is a 16384-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10480 is organized as 16384words-by-1-bit, meets the standard 10K family signal and

Contextual Info: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns

D3S85

Contextual Info: Philips Components 10101 D ocum ent No. 8 5 3 -0 6 3 7 ECN No. 99799 Date of Issue Ju ne 14, 1990 Status Product Specification Gate Quad 2-lnput OR/NOR Gate with Strobe E C L P roducts ORDERING INFORMATION FEATURES • Typical propagation delay: 2.0ns • Typical supply current - lEE : 20mA

NIPPON CAPACITORS

Abstract: CF5732KA CF5732EA CF5732FA CF5732GA CF5732HA CF5732JA nippon ga 32678
Contextual Info: CF5732 Series Analog clock CMOS IC NIPPON PRECISION CIRCUITS INC. OVERVIEW FEATURES The CF5732 series are analog clock driver ICs using 32kHz reference frequency of crystal oscillator. Some versions in accordance with the combinations of each motor drive and alarm output characteristics can provide

HA 3089

Abstract: ic 7500 "Photo Interrupter" dual transistor 3045 PT photon coupled interrupter nte 3100 npn zero crossing triac FT DARLINGTON TRANSISTOR npn transistor photon coupled interrupter 3101 PT 1300 phototransistor
Contextual Info: ì mm NI T E E L E C T R O N I C S NTE TYPE WX OESCNPTtON 3039 Lite/Dark Switch -v INC 1 ?E ^ HAX SUPPLY VOUAGE DIAS NO. * K : • baiasi G O O l T b ö =1 ■ V MAX OUTPUT VOLTAGE ’ (V) HAX OUTPUT CURRENT (mA) . vcc v0UT 15 15 176 . UGHT THRESHOLD LEVEL

Contextual Info: SEC ffPB10A484 4,096 X 4-Bit 10K ECL RAM NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The fiPB10A484 is a very high-speed 10K interface ECL RAM organized as 4,096 words by 4 bits with nonin­ verted, open-emitter outputs. Two versions with access

Transistor BFR 80

Abstract: BFR 30 transistor Transistor BFR 30 gh 312 BFR 80 Transistor BFR 90 BFR35 Transistor BFR 35 Transistor BFR 90 application Q62702-F347-S1
Contextual Info: BFR 35, BFR 35 A NPN Transistor fo r low-noise RF amplifiers and high-speed switching applications P re lim in a ry d a ta BFR 35 and BFR 35 A are epitaxial NPN silicon planar UHF transistors in a plastic case 23 A 3 DIN 41 869 SOT-23 for use in film circuits up into the GHz range, e.g.

40N55

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS nickicon Chip Aluminum Electrolytic Capacitors OP age number W P » C hiptype 4,5mmL, Bi-poiarized Chip type 5.5mmL, Bi-polarized " U N O . .» Chip type Bi-polarized Law Profits

Contextual Info: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.

Contextual Info: 19-0048; Rev 0; 12/92 , Precision Quad SPST, CMOS Analog Switches 1.1 This specification covers the detail requirements for three quad SPST CMOS switches. These cir­ cuits are processed in accordance with MIL-STD-883 and are fully compliant to paragraph 1.2.1.

Contextual Info: Preliminary HN624316 Series 16M 1M x 16-bit and (2M x 8-bit) Mask ROM • DESCRIPTION T he H ita c h i H N 6 2 4 3 1 6 is a 1 6 -M e g a b it C M O S M a sk Program mable Read Only M em ory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The high density and high speed provide enough capacity and

Contextual Info: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 1 .8 -3 .3V • Ultra-low active power • Low standby power • Easy memory expansion with C S i/C S 2 and OE features • TTL-com patible inputs and outputs • Automatic power-down when deselected

Contextual Info: LOW POWER * ovlnm îû î’ï ü n -1c i / „ a c m DAn/i 16K x 4 E C L R A M S t N E n G a SEMICONDUCTOR S Y100L494-7/8/10 SY101L494-7/8/10 DESCRIPTION FEATURES • Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.

SY101484-4

Abstract: SY10484-5CCF SY101484-6FCF S2811
Contextual Info: * SYNERGY SY10484-4/5/6 SY100484-4/5/6 SY101484-4/5/6 4K x 4 ECL RAM S E M IC O N D U C TO R DESCRIPTION FEATURES The Synergy SY10/100/101484 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized

Contextual Info: HM10494 Series 16384-word 4-bit Fully Decoded Random Access Memory x Description Th e H M 10 4S 4 is EC L 10K compatible, 16384-word by 4-bits read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

Contextual Info: ADV MICRO {t1EMORY> TL D E | 0257550 DDSbllB b | Am10 4 6 9 /Am100469 5 1 2 x 9 ËCL Tag Buffer Am10469/Am100469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Fast address to comparator output MISS Replaces six or mofe integrated circuits vyith a single

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on