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Contextual Info: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer
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mb62xxxxmb60xxxxfpt-160pm0140-lead+3dip-40p-m0154jtyp40006s-1c
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B634X
Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0
Contextual Info: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 |im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast
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b634xlu1414standard ttl aoi dual 2-wide 2-inputlu18+2c17b2h8e0
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t2d 64
Abstract: lu1414 fdn 156 MB631XXX LU18 mb633
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE AU Series CMOS Gate Arrays DESCRIPTION The AU series of 1.2 Jim CMOS gate arrays, available in eight device types with from 10K to 100K gates, achieves the ultra fast speed of 0.6 ns per gate. Thanks to the channel-free structure of the AU gate array, AU basic cells can be used for logic cells,
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t2d 64lu1414fdn 156mb631xxx+2lu18mb633
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TRANSISTOR PHL 641
Abstract: MAX1987 2 Input NAND Schmitt Trigger with Open Drain Outp mb62xxxx transistor 1PN M0623 transistor H6C LCC-48C-A01 BO 180 gq102b7
Contextual Info: s ? CO LU • • Œ S ü j u c/> » I S £ œ Dü< i I CO ÜJ o sen • • ú 1= S -a s s e s s s 9 s 3 <*- a2 *1 • i » I I 1 I ! i ! I i 1 1 se 1 § § i 1 § 1 1 5 2 • i D x i83 I I 03 CD X X 3 X 5 i i S 1 ó 1 1 « 5 ó 3 8 •- »- MB62XXXX MBSOxxxx
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mb62xxxxmb60xxxxfpt-160p-m01f160001s-2c+1540-leaddip-40p-m01090i2291max100i2d4000ss-jctransistor phl 641max19872 input nand schmitt trigger with open drain outptransistor 1pnm0623transistor h6clcc-48c-a01bo 180gq102b7
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MB625xxx
Abstract: MB62xxxx MB625 mb622 MB604XXX C1200UHB MB624xxx C-1200UHB MB603xxx mb622xxx
Contextual Info: October 1990 Edition 3.0 FUJITSU DATA SHEET MB62XXXX, MB60XXXX UHB SERIES 1.5m CMOS GATE ARRAYS D E S C R IP T IO N The UHB series of 1.5|lm CMOS gate arrays evolved from the C20K series of 1.5|lm 20,000 gate arrays, originally introduced in 1985. Itsenhanced
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mb62xxxxmb60xxxxmb625xxxmb625+7mb622mb604xxxc1200uhbmb624xxxc-1200uhbmb603xxxmb622xxx
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fujitsu cg10
Abstract: transistor H6C cg10572 CG10692 CG10492 CG10272 DIP-48P-MOI SQFP64 LCC64 CG10342
Contextual Info: cP FUJITSU May 1990 Edition 1.0 _ PRODUCT PROFILE - CG 10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-m icron CMOS gate arrays is a highly integrated low-power, ultra high-speed product fam ily that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-colum n gate structure and 2-layer
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208c-a02208-leadpga-208c-a029999999999999i+10fujitsu cg10transistor h6ccg10572cg10692cg10492cg10272dip-48p-moisqfp64lcc64cg10342
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transistor H6C
Abstract: CG10492 cg10572 code r4k transistor r3n FPT-70P-M QFP-196 lu1414 LU18 LCC-64C-A01
Contextual Info: FUjlTSU M ay 1990 Edition 1.0 P R O D U C T P R O FILE CG10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-micron CMOS gate arrays is a highly integrated low-power, ultra high-speed product family that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-column gate structure and 2-layer
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208-letransistor h6ccg10492cg10572+7code r4ktransistor r3nfpt-70p-mqfp-196lu1414lu18lcc-64c-a01
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transistor bL P09
Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
Contextual Info: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its
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mb62xxxxmb60xxxxt-160pf160001s-2c+1340-leadoip-40p-mu1m1t60d40008s-1transistor bl p09mb625xxxmb620transistor phl 218mb623xxxmb625mb624xxxn4kdfpt-70p-m
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JY diode
Abstract: TSP1-FF1608H8E2 H8E2
Contextual Info: 0.8mm Height Flat Top LED TSP1-H8E2 0.8mm Height Flat Top LED Features • • • • • Package in 8mm tape on 7” diameter reel Compatible with automatic placement equipment Compatible with infrared and vapor phase reflow solder process Mono-color type
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tsp1-ff1608h8e2jy diodeh8e2 |
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