H7N1005LM Search Results

H7N1005LM Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
H7N1005LM		Renesas Technology	MOSFET, Switching; VDSS (V): 100; ID (A): 15; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 830; toff ( us) typ: 0.042; Package: LDPAK (S)- (2)	Original	PDF	120.9KB	9

H7N1005LM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0100 Rev.1.00 Apr 07, 2006 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A	Original	H7N1005LD, H7N1005LS, H7N1005LM REJ03G0391-0100 PRSS0004AE-A PRSS0004AE-B H7N1005LD H7N1005LS PRSS0004AE-C	PDF
H7N1005LMTL-E Abstract: H7N1005LD H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C Contextual Info: H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A	Original	H7N1005LD, H7N1005LS, H7N1005LM REJ03G0391-0200 PRSS0004AE-A PRSS0004AE-B H7N1005LD H7N1005LS PRSS0004AE-C H7N1005LMTL-E H7N1005LD H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
H7N1009MD Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility	Original	CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as	PDF
H7N1005LD Abstract: H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF