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    H7N1004LS Datasheets (1)

    Renesas Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    H7N1004LS
    		Renesas Technology Silicon N Channel MOS FET Original PDF 110.03KB 12
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    H7N1004LS Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation H7N1004LS-E

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    Renesas Electronics Corporation H7N1004LS90TL-E

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    Renesas Electronics Corporation H7N1004LSTR-E

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    H7N1004LS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    td 2003 ap

    Abstract: H7N1004LD H7N1004LM H7N1004LS
    Contextual Info: H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z Previous ADE-208-1552E(Z Rev.6.00 Aug.27.2003 Features • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive


    Original     		h7n1004ldh7n1004lsh7n1004lmrej03g0072-0600z+2ade-208-1552etd 2003 ap PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		rej01g0001-0400rjh3047rjh3077rjp3047+7rjh3047dpkrjp3049rjp6065rjp3053rjp3042smd code fx mosfetrjp6055 PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		rjp6065rjp6006rjp3053rjh60f5+6transistor smd marking code jgbcr1am-12a equivalentrjh60f7rjp3063triac kt 207 600vrjp6006dpk PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		rej16g0001-1900rjp3053rjp3063rjp6065+7rjp2557rjp3057rjh30rqj0301rjp3065rjk5020rjk2009 PDF

    rjp3053

    Abstract: RJP3065 RJP3063 RJP3053DPP RJP2557 Rjp30 RJP3065DPP RJP3057 RJP3063DPP RJP4065
    Contextual Info: April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE sat High-speed switching PDP System PDP trends Scan IC Y Panel Sustain circuit X Power device High breakdown


    Original     		h7n1005lsh7n1004lsh5n2301pfh5n2306pf+16h5n2305pfh5n2509ph5n2503ph5n3004ph5n3007lsh5n3003prjp3053rjp3065rjp3063rjp3053dpprjp2557rjp30rjp3065dpprjp3057rjp3063dpprjp4065 PDF

    H7N1004LD

    Abstract: H7N1004LM H7N1004LS
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		h7n1004ldh7n1004lmh7n1004ls PDF