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    H5N2802PF Search Results

    H5N2802PF Datasheets (2)

    Renesas Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    H5N2802PF
    Renesas Technology MOSFET, Switching; VDSS (V): 280; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.057; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3600; toff ( us) typ: -; Package: TO-3PFM Original PDF 98.07KB 7
    H5N2802PF
    Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 50.23KB 4

    H5N2802PF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    H5N2802PF

    Abstract: PRSS0003ZA-A
    Contextual Info: H5N2802PF Silicon N Channel MOS FET High Speed Power Switching REJ03G1298-0200 Rev.2.00 Dec 12, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM D 1. Gate


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    h5n2802pfrej03g1298-0200prss0003za-a PDF

    Diode BAY 93

    Abstract: H5N2802PF PRSS0003ZA-A
    Contextual Info: H5N2802PF Silicon N Channel MOS FET High Speed Power Switching REJ03G1298-0100 Rev.1.00 Oct.05.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM D 1. Gate


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    h5n2802pfrej03g1298-0100prss0003za-a15ijing+1diode bay 93 PDF

    H5N2802PF

    Abstract: PRSS0003ZA-A
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    h5n2802pfprss0003za-a PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    rej01g0001-0400rjh3047rjh3077rjp3047+7rjh3047dpkrjp3049rjp6065rjp3053rjp3042smd code fx mosfetrjp6055 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    rej16g0001-1900rjp3053rjp3063rjp6065+7rjp2557rjp3057rjh30rqj0301rjp3065rjk5020rjk2009 PDF

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


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    cr3km-12cr6km-12cr8km-12o-220fn+16ot-89cr03am-16cr04am-12sc-59cr03am-12cr05am-12h7n1009mdhat2153rjtransistor fs10kmhat2180rpdiode h5nh7p1006mdimmobilizer antennacr3as-12hat1081rcr3as PDF