H3 MARKING Search Results

sandisk 32GB Nand flash

Abstract: SDED7-256M-N9 MD2533-D8G-X-P X-GOLD 110 NAND flash 64gb md2533-d16g-x-p MD2534-D1G-X-P sded5-004g-ncy mdoc h3 SDED5-002G
Contextual Info: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk‟s successful mDOC

sandisk 32GB Nand flash

Abstract: sDED7-256M-N9Y sded7-256m-n9 X-GOLD 223 infineon x-gold MD2534-D2G-X-P SDED5-001G-NA sandisk mDOC H3 SanDisk SDED7-256M-N9 MD2534-D1G-X-P
Contextual Info: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, November 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC

sandisk 32GB Nand flash

Abstract: SDED7-256M-N9 SDED7-256M-N9Y MD2534-D1G-X-P SDED5-512M-N9T SDED7-256M-N9T SDED5-002G-NC sded5-004g-ncy SanDisk SDED7-256M-N9 MD2534-D2G-X-P
Contextual Info: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2008 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC

BAW56W

Abstract: marking h3
Contextual Info: SEMICONDUCTOR BAW56W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H3 1 2 Item Marking Description Device Mark H3 BAW56W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SANKEN ELECTRIC CO., LTD. SJPX-H3 1. Scope The present specifications shall apply to an SJPX-H3. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 060509 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

F MARKING 6PIN

Contextual Info: UMH3N IMH3A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMH3N and IMH3A; H3 UMH3N (UMT6) Z.OtO.2 package contains two independent NPN digital transistors

marking h3

Contextual Info: BCW89 SMALL SIGNAL PNP TRANSISTOR • ■ ■ Type Marking BCW 89 H3 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO-AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

smd LB 012

Abstract: BCW89
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

Contextual Info: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) SOT-23 o- H3- o 3 2 EH M 0001 Maximum Ratings Parameter Symbol Values Unit V

BCW89

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

Contextual Info: DMA26603 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: H3  Basic Part Number

BCW89

Abstract: BS7 marking
Contextual Info: L BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 _t.02_ 0.89 2.00 1.80 ABSOLUTE MAXIMUM RATINGS

marking h3

Abstract: SC08810 od31
Contextual Info: F Z J S G S - T H O M S O N Ä 7 # Me^iLliOTSMIgS BCW89 SMALL SIGNAL PNP TRANSISTOR Type Marking BCW89 H3 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO-AMPLIFICATION AND

0714A

Abstract: NS9L153MT-H3
Contextual Info: Nichia STS-DA1-0714A <Cat.No.090417> SPECIFICATIONS FOR NICHIA CHIP TYPE WARM WHITE MODEL : NS9L153MT-H3 NICHIA CORPORATION -0- LED Nichia STS-DA1-0714A <Cat.No.090417> 1.SPECIFICATIONS 1 Absolute Maximum Ratings Item Forward Current Pulse Forward Current

NSSL123BT-H3

Abstract: NSSL123
Contextual Info: Nichia STS-DA1-0804A <Cat.No.090611> SPECIFICATIONS FOR NICHIA CHIP TYPE WARM WHITE MODEL : NSSL123BT-H3 NICHIA CORPORATION -0- LED Nichia STS-DA1-0804A <Cat.No.090611> 1.SPECIFICATIONS 1 Absolute Maximum Ratings Item Forward Current Pulse Forward Current

NS2L123BT-H3

Abstract: STS-DA1-0808A NS2L123B-H3
Contextual Info: Nichia STS-DA1-0808A <Cat.No.090611> SPECIFICATIONS FOR NICHIA CHIP TYPE WARM WHITE MODEL : NS2L123BT-H3 NICHIA CORPORATION -0- LED Nichia STS-DA1-0808A <Cat.No.090611> 1.SPECIFICATIONS 1 Absolute Maximum Ratings Item Forward Current Pulse Forward Current

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

Contextual Info: Nichia STS-DA1-1078 <Cat.No.100326> SPECIFICATIONS FOR NICHIA CHIP TYPE WHITE MODEL : NSSW150T-H3 NICHIA CORPORATION -0- LED Nichia STS-DA1-1078 <Cat.No.100326> 1.SPECIFICATIONS 1 Absolute Maximum Ratings Item Forward Current Pulse Forward Current Allowable Reverse Current

Contextual Info: BCW89 CDU SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm O .H 0.70 0.50 "11.4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 R0.1 ööö+T j f S »W-05 0.12 0.02 ABSOLUTE MAXIMUM RATINGS

Vishay diodes code marking

Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
Contextual Info: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year

marking h3a

Abstract: marking h3 KDV153
Contextual Info: SEMICONDUCTOR KDV153 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H3A 1 2 Item Marking Description Device Mark H3 KDV153 Grade A A, B, C, D * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

F5 marking code

Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
Contextual Info: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month