H2N5401
Abstract: H2N5551
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2002.02.20 Page No. : 1/4 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features • Complements to PNP Type H2N5401
|
Original
|
he6219h2n5551h2n5401 |
PDF
|
H2N5401
Abstract: H2N5551
Contextual Info: HI-SINCERITY Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 MICROELECTRONICS CORP. H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 • Complements to PNP Type H2N5401
|
Original
|
he6219h2n5551h2n5401diss60+3183oc217oc260oc
|
PDF
|
H2N5401
Abstract: H2N5551 HE6203
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Page No. : 1/5 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages.
|
Original
|
he6203h2n5401h2n5551183oc+2217oc260oc
|
PDF
|
H2N5401
Abstract: H2N5551 HE620
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2002.02.20 Page No. : 1/4 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages.
|
Original
|
he6203h2n5401h2n5551he620 |
PDF
|
