H 13001 F Search Results

HA13001

Abstract: HA13001 amplifier HA-13001 SRUT 5.5w HA13001 hitachi
Contextual Info: H A 13001 5.5W Dual/17.5W B T L Audio P o w er Am plifier •t t S o i t t ♦ n . 4 « ¿ ^ h 11 . o f t ' # * * " r * » t W t A M ?» 1 1 , O f lif c ie m t - C T .U O k H i. 0 .5 W u t 0.2294 typ • B T L T > T * LT«!HILfc«kä O A S O « J * 0 |M t* * > T . O C L T f U f f l T è J t .

PA 13001

Abstract: 13001 s c s x 13001 H 08 c s x 13001 F 08 w 13001 13001S 13001sh h 13001 e 13001 H 13001 sh
Contextual Info: 10 Circuit NOT ES = 1- M A T ER IA L: - HOUSING: P O LY A M ID E 46 - T ER M IN A L: PHOSPHOR BRONZE P L A T E D FIB E R AREA, 0 .0 0 I 9 0 / .0 0 0 0 7 5 MIN TAB: BRASS FOR 3 - PRODUCT MATING MIN P U R E TIN P R E -P L A T E D WITH F .C .C .6 8 S P E C IF IC A T IO N

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V C256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

13001 LZ

Abstract: SR 13001 PA 13001
Contextual Info: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh

CS 13001

Abstract: transistor 13001 transistor di 13001 transistor 13001 datasheet 13001 datasheet CAT13001 1 13001 transistors 13001 AEC-Q100 CAT130019SWI-GT3
Contextual Info: CAT130xx Voltage Supervisor with Microwire Serial CMOS EEPROM FEATURES DESCRIPTION „ Precision Power Supply Voltage Monitor The CAT130xx see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a

CS 13001

Abstract: free circuit diagram for 13001 c s x 13001 H 08 onsemi marking SK transistor di 13001 13001 H all transistor 13001 transistor 13001 transistors 13001 AEC-Q100
Contextual Info: CAT130xx Voltage Supervisor with Microwire Serial CMOS EEPROM FEATURES DESCRIPTION „ Precision Power Supply Voltage Monitor The CAT130xx see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a

free circuit diagram for 13001

Abstract: CS 13001
Contextual Info: CAT130xx Voltage Supervisor with Microwire Serial CMOS EEPROM Description http://onsemi.com The CAT130xx see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a system power supervisor with brown−out

13001 TRANSISTOR

Abstract: c s x 13001 H 06 transistor x 13001 transistor c s x 13001 13001 TO-92 13001 npn transistor TO-92 13001 transistors 13001 transistor 13001 13001 transistor 400v
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage

Contextual Info: 10 © 1— rr < X o Ld LU l/> 1- MATERIAL: - HOUSING: POLYAMIDE 46 FIBER GLASS FILLE D - TERMINAL: PHOSPHOR BRONZE PLA TE D c5 o UL 9 4 -V 0 , COLOR BLACK. WITH: 0 . 0 0 127/.000050 MIN GOLD IN CONTACT AREA, 0 . 0 0 190/.000075 MIN T IN /LE A D IN TA IL AREA, BOTH OVER 0 . 0 0 127/.000050

13001 TRANSISTOR

Abstract: transistor 13001 transistor x 13001 transistor 13001 TO 92 13001 transistor 400v c s x 13001 H 06 transistors 13001 all transistor 13001 NPN transistor 13001 transistor s 13001
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage

13001 TRANSISTOR

Abstract: transistor 13001 transistor x 13001 13001 transistor 400v c s x 13001 H 06 13001 npn transistors 13001 transistor s 13001 13001 transistor c s x 13001
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING Ta =25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage

54-794-002-102P

Abstract: 54-713-001-102Z
Contextual Info: M etuchen Gflfl “We Offer Quick Solutions to Noise Pollution” I -800-679-0516 • Ti e — I -800-679-9959/FajT^ www.metcaps.cbm F e e d -T h ru C e ra m ic C a p a c it o r s W o r ir in t V o lt a g e + 8 5 °C - : + I2 S * C : 200 W V D C I00 W V D C

Contextual Info: Material and Finish Body: High Temperature Thermoplastic, UL94V-0 Rated, Black Contacts: Phosphor Bronze, Gold Flash over Nickel on Contacts, Tin over Nickel on Termination Shield: SPCC, Nickel Plated Electrical Characteristics Contact Resistance: Before Test:

Contextual Info: Material and Finish Body: High Temperature Thermoplastic, UL94V-0 Rated, Black Contacts: Phosphor Bronze, Gold Flash over Nickel on Contacts, Tin over Nickel on Termination Shield: SPCC, Nickel Plated Electrical Characteristics Contact Resistance: Before Test:

Contextual Info: 3P AC INLET RECEPTACLE ORDERING CODE: A C -0 1 6 AC — 01 6 - □ - L Z 3 - TERMINAL TYPE 1.7 • — | — DIM. 'A* i i = El j \ 7 DlA ' 1 .6 6 —•H h— 3 .2 1 — r A l %a D lA IE : f r PANEL CUT OUT DIM. (THICKNESS SEE TABLE ~

Contextual Info: o CO CO Material and Finish s 0 * Body: High Temperature Thermoplastic, UL94V-0 Rated, Black 00 s Contacts: Phosphor Bronze, Gold Flash over Nickel on Contacts, Tin over Nickel on Termination 10 Shield: SPCC, Nickel Plated o o CM r- 10 Electrical Characteristics

Contextual Info: REV. DESCRIPTION — RELEASE DATE O c t 30, 2 0 DO MATERIALS MODIFY Jun. 1, 2D01 2 E= NO. OF POSITION PER ROW x2.00+0.50±0.40 (NO. O F PO SITIO N P E R R O W )x.0 7 9 + . 0 2 0 ± . 0 1 6 n n n n n n n n n n n n F = (N O . OF POSITION P E R R O W -1 )xZ.OO

Contextual Info: E= N0. (NO. f= ( n o . (NO. G=(NO. (NO. OF OF OF OF OF OF POSITION POSITION POSITION POSITION POSITION POSITION PER PER PER PER PER PER REV. — i 2 ROW x1.27 R0W)x.050 R 0 W -1 ) x 1.27 R 0W -1)x.050 R 0 W -2 )x1 .27 ROW—Z)x,050 DESCRIPTION RELEASE DRAW MODIFY

13001E

Contextual Info: laser diodes U iA ii 1310nm OED-LDC13001 SERIES Description The OED-LDC13001 Series are MQW lnA1GaAs/lnP 1310 nm laser diodes with a flat-window/ball-lens caps. They are suitable for short and medium range optical communication applications optical data links,

TA 7122 AP

Abstract: tic 1260 TP 7122 SP 13001
Contextual Info: • B MITSUBISHI DISCRETE SC 31E D B b 2 H t1fl2tì 0014367 2 • H I T S MF-125DS-TR113-001 D igita l O p tical T r a n sc e iv e r M o d u le w ith C lo c k R e c o v e ry M F-125D S-T R 113-001 contains T -U I-o i 130Qnm tensed surface-em itting L E D a n d In G a A s PIN pho to d etec­

Contextual Info: Series 800 Vertisocketsm Vertical Mounting with Bifurcated Contacts FEATURES: •Aries offers a full line of Vertisockets for DIP packag­ ing of LEDs, incandescent lamps, DIP switches, test points, etc. The variations of mounting position and pin configuration provide exceptional design freedom.

13002

Abstract: HB 541 X810 MIL-T-10727 c s x 13001 H 08
Contextual Info: -f l O — no - - sqs Series 800 Vert¡sockets" Vertical Mounting with Bifurcated Contacts FEATURES: • Aries offers a full line of Vertisockets for DIP packaging of LEDs, incandescent lamps, DIP switches, test points, etc.

Contextual Info: Series 800 Vertisockets Horizontal Mounting with Bifurcated Contacts FEATURES: •Aries offers a full line of Vertisockets for D IP packag­ ing of LEDs, incandescent lamps, D IP switches, test points, etc. The variations of mounting position and pin configuration provide exceptional design freedom.

HD-20

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR DESCRIPTION HOUSING FACE COVER: Sc SOCKET CONTACTS: TH READED NYLON, THERMOPLASTIC, PHOSPHOR INSERTS: