GTO THYRISTORS Search Results

fuji igbt transistor modules

Abstract: 1mbi1200u fuji inverter LM 1MBI1600U4C-120 fuji transistor modules fuji bipolar transistor GTO thyristor diode fuji order number M143 1MBI1200
Contextual Info: High-power IGBT Modules for Industrial Use Takashi Nishimura Hideaki Kakiki Takatoshi Kobayashi 1. Introduction Power devices used in industrial-use high capacity inverter system applications are predominately GTO gate turnoff thyristors, which easily handle high

GTO thyristor Application notes

Abstract: Thomson-CSF capacitors FPX86Y1254J GTO thyristor Thomson-CSF THYRISTOR 100 amp 1000 volt GTO Thomson-CSF passive components FPX86Y0505J Thomson-CSF ceramic capacitor FPX86Y0275J
Contextual Info: FPX RANGE Capacitor for Power Electronics Preliminary data sheet Preliminary data FPX Applications Protection of thyristors . Protection of gate turn off thyristor GTO . Clamping (Secondary snubber) . Technology Metallized polypropylene dielectric capacitor with controlled self healing .

FG1000CX50

Abstract: FG600EX-50 FG600EX50 FG2000DX24 FG1000CX-50
Contextual Info: POUEREX INC B'îE D ?<HHREX • 72^1,21 000S035 T Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 HIGH FREQUENCY GTO THYRISTORS Type Vdrm Volts

TGS 2600

Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

CCSTA14N40

Abstract: FP4651 Solidtron gto thyristor SCR 957
Contextual Info: CCSTA14N40 N-Type, ThinPakTM Preliminary Data Sheet Description Package This current controlled Solidtron CCS discharge switch is an ntype Thyristor in a high performance ThinPakTM package. The device gate is similar to that found on a traditional GTO Thyristor.

FG3000BV90

Abstract: FG600AH50 GT300AL20 fg2000dv90 FG1000AH-50 gt300al-20 FG2000DV-90 FG3000BH50 FG1800CH50 FG1000AL
Contextual Info: 3=JE D P0Ü1EREX INC m m ìE X • 7 5 ^ ^ 2 1 0DDS031 2 « P R X T - Ï S '- O Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 ASYMMETRICAL GTO THYRISTORS

606-4

Abstract: sensitive gate thyristors
Contextual Info: / Z T SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL HO [fiì ILi gTO®M(gS MEDIUM POWER THYRISTORS & TRIACS < 100 A THYRISTORS PLASTIC SENSITIVE GATE THYRISTORS Tamb = 25°C Type <0 Vr r m (A See NOTE 4 Arms / Tçonnex. = 25°C TLS 106-05— 6 TLS 107-05— 6

cb 478

Abstract: CB-480 CB-478 THDG516C
Contextual Info: SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A GATE TURN-OFF THYRISTORS GTO Type •t c m A VDRM (V) Vr r m * (V) ■t r m s (A) Tcase (°C) ■t s m (A) Rth (°C/W) Package THDG 224 S THDGT 224 S THDG 225 S

Contextual Info: 1201PGA200 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)2.0k V(RRM) Max. (V)2.0k I(T) Rated Maximum (A)500² @Temp. (øC) (Test Condition) I(TSM) Max. (A)4.0k @ t(w) (s) (Test Condition) I(GT) Max. (A)2.0 V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current30Â

Contextual Info: 1401PGA200 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)2.0k V(RRM) Max. (V)2.0k I(T) Rated Maximum (A)500² @Temp. (øC) (Test Condition) I(TSM) Max. (A)4.0k @ t(w) (s) (Test Condition) I(GT) Max. (A)2.0 V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current30Â

GTO thyristor

Abstract: 40A GTO thyristor GDM21220 GTO triac NTC 15E 15A powerex gate turn-off THYRISTOR GTO powerex gate turn-off gto GTO thyristor powerex CS 601 thyristor
Contextual Info: P O W E R E X INC 1SE D • TSTMbHl DDG3b7S 3 ■ 7 ^ 2 5 * -«23. GDM11220 GDM21220 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Gate Turn-Off (GTO)

Contextual Info: 1201PGA100A Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.0k V(RRM) Max. (V)1.0k I(T) Rated Maximum (A)550² @Temp. (øC) (Test Condition) I(TSM) Max. (A)4.5k @ t(w) (s) (Test Condition) I(GT) Max. (A)2.0 V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current30Â

Contextual Info: 150PFT2300 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)2.3k V(RRM) Max. (V) I(T) Rated Maximum (A)150± @Temp. (øC) (Test Condition)81# I(TSM) Max. (A) @ t(w) (s) (Test Condition) I(GT) Max. (A) V(GT) Max.(V) I(H) Max. (A) Holding Current I(D) Max. (A) Leakage Current

MB11A02

Abstract: cd7212 Thyristor Modules CD771 thyristor tt 142 n 12 powerex ME30 powerex ME20 powerex ME10 thyristor tt 18 n 800 thyristor TT 18 N 1200
Contextual Info: 7294621 POWE RE X INC TI DE | TaTMbai ODDlflET 5 2,_? Thyristor and Diode Modules GTO Thyristor Modules ITGQ lT AV Tc (Am ps) (Amps) (°C) Vdrm (Volts) (Volts) tq fosee) (Volts) d i/d t (A/fjsec) (mA) 100 20 60 1200 15 8.0 1.5 200 400 GDM1/GDM2 GDM1/GDM21210

FG600AH

Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Contextual Info: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC

GTO thyristor Curve properties

Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by

1n5399 equivalent

Abstract: scr rca 40A GTO thyristor rca thyristor D2101 G5001A SCR GTO 1N2862 D3202 S3901S
Contextual Info: 1TR Product Matrix GTO Product Matrix For H o rizontal-D eflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550

GB2025BA

Abstract: DB1025BA fg2000 fg4q
Contextual Info: • G T O THYRISTORS Ptt&gs outline ftwrts 4500 Eléctrica! characteristics Max.: ratings Control SMWwr Surge ¿KÜC» Gate M W&NH- Turn possible condensai fegpn- trigger trigger nMntfsioff on-current current » current voltage wlttse tifi» dv/dt Cs Tj taq

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

Contextual Info: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE

Gate Turn-Off Thyristors

Abstract: BTV59 M0601 diode gfm GTO switching circuit BTV59D-850R BY359 IEC134 GTO switching test PH 21 DIODE
Contextual Info: BTV59D SERIES J V_ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE Fast gate tu rn -o ff th y ris to rs w ith anti parallel connected fast soft-recovery diodes in T O -2 3 8 A A . They are suitable fo r use in high frequency inverters, pow er supplies and m o to r c o n tro l systems re quirin g a

GTO triac

Contextual Info: 2. MAXIMUM RATINGS 2.1 Difinition of Maximum Ratings The maximum permissible value of current to be supplied to, voltage applied to or reverse power dissipation, etc., of; diodes, rectifiers, thyristors, triacs, etc., is defined as the maximum rating. In designing semiconductor devices, full recognition of the maximum ratings is of prime importance for

diode gfm

Abstract: GTO thyristor Gate Turn-Off Thyristors gto 10A M1439 IEC134 gto 20A GTO switching test GTO switching circuit M227S
Contextual Info: DEVELOPMENT DATA BTV159DV SERIES T h is d a ta she et c o n ta in s a d v a n c e in fo r m a tio n a n d s p e c ific a tio n s are s u b je c t t o c h a n g e w it h o u t n o tic e . FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE Fast gate tu rn -o ff th y risto rs w ith anti-parallel-connected fast soft-recovery diodes in IS O TO P. T hey

Contextual Info: GDU 90 20302 JULY 1996 DS4563 - 2.3 GDU 90 20302 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching