GTO 100A Search Results

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 291 S ø3,5+0, deepth = 4±0,2 on both C A Applikation: Beschaltungsdiode zu GTO - Vorrichtungen Application: Snubberdiode at GTO - Inverter VWK January Schnelle Gleichrichterdiode

d291

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 291 S ø3,5+0, deepth = 4±0,2 on both C A Applikation: Beschaltungsdiode zu GTO - Vorrichtungen Application: Snubberdiode at GTO - Inverter VWK January Schnelle Gleichrichterdiode

CA 125C

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 291 S ø3,5+0, deepth = 4±0,2 on both C A Applikation: Beschaltungsdiode zu GTO - Vorrichtungen Application: Snubberdiode at GTO - Inverter VWK January Schnelle Gleichrichterdiode

D291S

Abstract: d291 3000a7 D841 D 841 S 45 T
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ø7 C A ø3,5± ø77 0,1 48- 0,1 Applikation: Beschaltungsdiode zu GTO - Vorrichtungen Application: Snubberdiode at GTO - Inverter VWK January Schnelle Gleichrichterdiode Fast Diode

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 291 S ø3,5+0, deepth = 4±0,2 on both C A Applikation: Beschaltungsdiode zu GTO - Vorrichtungen Application: Snubberdiode at GTO - Inverter VWK January Schnelle Gleichrichterdiode

THYRISTOR GTO

Abstract: rkm THYRISTOR GTO rkm v SDG250 SDG250HB SDG250HD SDG250HF SDG250HH SDG250HK 600a thyristor gate turn off
Contextual Info: SDG250 77mm SYM GTO 4500V / 2500A SPCO Type SDG250 reverse blocking gate turn-off thyristor, GTO, is manufactured by the proven multi-dif­ fusion process and incorporates a unique emitter design patent issued which offers distinct advantages for improving the gate turn-off conditions.

GTO thyristor

Abstract: SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE
Contextual Info: ISE 0 I 813U.71 0001SQ5 3 | S^MIKRON.INC V drm V V rrm V 800 1000 1200 1400 1600 15 15 15 15 15 T k .Z3 seMIKRDn SEMIPACK 3 GTO Thyristor/ Diode Modules SKGH 500/08 SKGH 500/10 SKGH 500/12 SKGH 500/14 SKGH 500/16 SKGH500 GTO thyristor data Symbol SKGH 500

GTO catalogue

Abstract: SG1000EX23 toshiba gto
Contextual Info: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,

Contextual Info: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter

DSF21545SV

Abstract: DSF21545SV45
Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.

DGT409BCA

Abstract: TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes
Contextual Info: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter

Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.

Contextual Info: DSF21545SV DSF21545SV Fast Recovery Diode Replaces January 2000 version, DS4153-4.0 DS4153-5.0 June 2004 APPLICATIONS • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.

TGS 2600

Abstract: GTO thyristor 3000V 800A 150a gto DGT409BCA DGT409BCA6565 TGS 200
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

7,5 kw mitsubishi inverter

Abstract: gto 100A 100A GTO GTO peak reverse test mitsubishi ODC20 GTO switching test mitsubishi
Contextual Info: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FG R3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Voltage class Parameter Symbol Unit 90DA Repetitive peak off-state voltage*

1000A 100V power diode

Abstract: DSF8045SK DSF8045SK40 DSF8045SK41 DSF8045SK42 DSF8045SK43 DSF8045SK44 DSF8045SK45
Contextual Info: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs • Snubber Diode For GTO Applications FEATURES

MITSUBISHI GATE TURN-OFF THYRISTORS

Abstract: 200a gto gto 200A FGR3000CV-90DA GTO 100A gto 2400 GTO switching test mitsubishi gto mitsubishi 4500V 900A
Contextual Info: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FGR3000CV-90DA Dimensions in mm GATE WHITE 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) 26 ± 0.5 ● ITQRM Repetitive controllable on-state current .3000A

TGS 2600

Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

A796

Contextual Info: A796 53mm Fast Recovery DIODE 1500 - 2500V The A796 fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with

1000A 100V power diode

Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling

DSF8035SK

Abstract: DSF8035SK35
Contextual Info: DSF8035SK DSF8035SK Fast Recovery Diode Replaces March 1998 version, DS4412-1.3 DS4412-2.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 335A IFSM 3500A Qr 400µC trr 4.0µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double side cooling

GFM 15A

Abstract: GTO thyristor GTO thyristor powerex 100A gate turn-off thyristor GDM21210 thyristor cp 04 95 thyristor TT 36 N GDM11210 powerex gate turn-off gto THYRISTOR GTO
Contextual Info: POQJEREX INC wuiBtex 1SE D m TEmhSI OQOHfc.b'l fi • GDM11210 GDM21210 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Gate Turn-Off (GTO) Thyristor Modules

DSF11060SG

Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
Contextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling