GT50J342 Search Results

Contextual Info: GT50J342 ディスクリートIGBT シリコンNチャネルIGBT GT50J342 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 50 A) (3) 接合温度が高い: Tj = 175 (最大) (4)

Contextual Info: GT50J342 Discrete IGBTs Silicon N-Channel IGBT GT50J342 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 50 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector

Contextual Info: GT50J342 Discrete IGBTs Silicon N-Channel IGBT GT50J342 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 50 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector

gt50jr22

Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
Contextual Info: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various