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    GT30 TOSHIBA Search Results

    GT30 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA
    Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Datasheet
    GT30J122A
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT30J341
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 33 A, Built-in Diodes, TO-3P(N) Datasheet
    GT30J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT30N135SRA
    Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Datasheet

    GT30 TOSHIBA Datasheets Context Search

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    GT30J126

    Abstract: GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba
    Contextual Info: GT30J126 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT30J126 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


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    GT30J126 2-16F1A 20070701-JA GT30J126 GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba PDF