GT20G10KSM Search Results

GT20G10KSM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GT20G10KSM TOSHIBA TO SH IBA IN SULATED GATE BIPOLAR TRAN SISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V cE (sat) = 8V (Max.) (Ic = 130A) Enhancement-Mode	OCR Scan	GT20G10KSM) 2-10S2C	PDF
Contextual Info: SILICON N CHANNEL MOS TYPE GT20G10KSM — STROBE FLASH APPLICATIONS Unit in mn 1Q.3MAX . High Input Impedance 5.0 . Low Saturation Voltage : VcE sat)=8V(Max.)(Ic=130A) . Enhancement-Mode 0.1 . 20V Gate Drive - r ¥JlHL y 2.54± 0.25 2 54±0.25 HAXIMUM RATINGS (Ta=25°C)	OCR Scan	GT20G10KSM)	PDF
GT20 Abstract: GT20G101 Contextual Info: TOSHIBA GT20G10KSM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 0 1 SM) STROBE FLASH APPLICATIONS Unit in mm High Input Impedance Low Saturation Voltage : V qe (sat) = 8V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive	OCR Scan	GT20G101 2-10S2C GT20	PDF
Contextual Info: T O S H IB A G T20G10KSM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) Enhancement-Mode	OCR Scan	T20G10KSM GT20G10KSM	PDF