GSM BASE STATION Search Results

gsm signal Booster

Abstract: gsm signal amplifier gsm Booster GSM max power diagram DML Microwave gsm power amplifiers 10 w 1702 gsm booster circuit circuit booster gsm md68
Contextual Info: 27223 DML Microwave 4/7/01 1:51 pm Page 5 GSM P.A. 10 W BOOSTER AMPLIFIER EXTENDS POWER CAPABILITY OF GSM MICROCELL BASE STATIONS GENERAL INFORMATION ADVANTAGES The MCE DML Microwave Booster Amplifier increases the power capability of GSM Microcell Base Stations up to 10. The product is compact

M 9587

Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Contextual Info: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station

A 434 RF

Abstract: RF receiver 434 Mhz
Contextual Info: QHD-2BH-0.9G QUAD HYBRID REV: 003, 06/19/06 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION

base station receiver GSM

Contextual Info: QHD-2BH-0.9G QUAD HYBRID REV: 003, 06/19/06 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION

Contextual Info: QHD-2BH-0.9G QUAD HYBRID REV: 002, 09/08/04 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION

DML Microwave

Abstract: 1702 rf amplifier 100w rf power amplifier 100w
Contextual Info: 27223 DML Microwave 4/7/01 1:46 pm Page 1 PCS P.A. SOLID STATE 40 W POWER AMPLIFIER FOR GSM 1800 BASE STATIONS GENERAL INFORMATION ADVANTAGES MCE DML Microwave has designed this 40W Power Amplifier for use in GSM 1800 PCS 1900 version available Base Station applications

12065G105AT2A

Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

Contextual Info: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

Contextual Info: DATA SHEET AV131-315, AV131-315LF: HIP3 Variable Attenuator for AMPS and GSM Base Stations Features 23 dB attenuation range 1.5 dB insertion loss, 1.5 SWR ● 0–12 V control voltage ● 43 dBm IP3 ● Small footprint LGA package ● Designed for AMPS and GSM base stations

12065G105AT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

MRF7S18125

Abstract: J281 MRF7 Z9.1 A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

Contextual Info: Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

Contextual Info: PRELIMINARY DATA SHEET SKY73103: 1460-1665 MHz High Performance VCO/Synthesizer With Integrated Switch for GSM Applications Applications Description • 2G, 2.5G, and 3G base station transceivers: − GSM, EDGE, WCDMA Skyworks SKY73103 Voltage-Controlled Oscillator

Contextual Info: Applications • 2G / 3G / 4G wireless systems • LTE transceivers • UHF/VHF public safety bands • Macro base stations • Micro base stations • Pico base stations • Femto base stations • GSM, UMTS, multistandard transceivers • Test and measurement

"Base Transceiver Station"

Contextual Info: RFM SF1071 71.0 MHz GSM IF SAW Filter This filter is designed for the IF of a GSM Base Transceiver Station BTS . Nominal Operating Frequency (fc ). 71.0 MHz Passband Insertion dB (max), 8.5 dB (typ)

Contextual Info: RF COMPONENTS GSM HIGH POWER AMPLIFIER TYPE 760036-00000 This low cost high power amplifier is specifically designed for GSM base stations and test bench applications. Standard features include harmonic filtering, lightning protection of output, overheat protection, oversupply

TLX8-0300

Abstract: "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800 MRF18090A
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies

MRF18085A

Abstract: GSM1800 MRF18085ALSR3 MRF18085AR3 MRF18085ALS
Contextual Info: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with

Contextual Info: RF2480 5 DIRECT QUADRATURE MODULATOR Typical Applications • Dual-Band CDMA Base Stations • W-CDMA Base Stations • TDMA/TDMA-EDGE Base Stations • WLAN and WLL Systems • GSM-EDGE/GSM Base Stations • TETRA Systems Product Description .157 .150 1

direct pm modulation circuit

Abstract: modulator 26MHz AN0001 RF2480 SOIC-16
Contextual Info: RF2480 5 DIRECT QUADRATURE MODULATOR Typical Applications • Dual-Band CDMA Base Stations • W-CDMA Base Stations • TDMA/TDMA-EDGE Base Stations • WLAN and WLL Systems • GSM-EDGE/GSM Base Stations • TETRA Systems Product Description -A- 0.050 ü