GS816236 Search Results

Contextual Info: GS816218 B/D /GS816236(B/D)/GS816272(C) 119-, 165-, & 209-Bump BGA Commercial Temp Industrial Temp 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs Features Data Output Register. Holding FT high places the RAM in

Contextual Info: GS816218 B/D /GS816236(B/D) 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 36 18Mb Sync Burst SRAMs 119-, 165-Bump BGA Commercial Temp Industrial Temp Features Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output

Contextual Info: Preliminary GS816218A B/D /GS816236A(B/D)/GS816272A(C) MHz–200 MHz 1M x 18, 512K x 36, 256K x 72 300 1.8 V or 2.5 V VDD 18Mb S/DCD Sync Burst SRAMs 1.8 V or 2.5 V I/O 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation

13007 h4

Abstract: GS816218 GS816236 GS816272 GS816236bd 13007 h3
Contextual Info: Preliminary GS816218 B/D /GS816236(B/D)/GS816272(C) 1M x 18, 512K x 36, 256K x 72 18Mb S/DCD Sync Burst SRAMs 119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable

Contextual Info: GS816218 B/D /GS816236(B/D)/GS816272(C) 1M x 18, 512K x 36, 256K x 72 18Mb S/DCD Sync Burst SRAMs 119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable

13007 h3

Abstract: passing H7 K744 gw 340 13007 h4
Contextual Info: Preliminary GS816218A B/D /GS816236A(B/D)/GS816272A(C) MHz–200 MHz 1M x 18, 512K x 36, 256K x 72 300 1.8 V or 2.5 V VDD 18Mb S/DCD Sync Burst SRAMs 1.8 V or 2.5 V I/O 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation

GS816218

Abstract: GS816218B-250 GS816236 GS816272 GS816236bd
Contextual Info: GS816218 B/D /GS816236(B/D)/GS816272(C) 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 119-, 165-, & 209-Bump BGA Commercial Temp Industrial Temp Features Data Output Register. Holding FT high places the RAM in

GS816218

Abstract: GS816236 GS816272 GS816236bd
Contextual Info: GS816218 B/D /GS816236(B/D)/GS816272(C) 1M x 18, 512K x 36, 256K x 72 18Mb S/DCD Sync Burst SRAMs 119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable

Contextual Info: GS816236BD-200M 200 MHz 3.3 V and 2.5 V VDD 3.3 V and 2.5 V I/O 512K x 36 18Mb Sync Burst SRAM 165-Bump BGA Military Temp Base datasheet: GS816218/36BD Product s covered in this document: GS816236BD-200M Product specification(s) addressed by this document:

GS816218AB-300

Contextual Info: Preliminary GS816218A B/D /GS816236A(B/D)/GS816272A(C) MHz–150 MHz 1M x 18, 512K x 36, 256K x 72 300 2.5 V or 3.3 V VDD 18Mb S/DCD Sync Burst SRAMs 2.5 V or 3.3 V I/O 119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation

Contextual Info: GS816218/36D B/D -xxxV 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 119 & 165 BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan

Contextual Info: Preliminary GS816218/36D B/D -400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs Features 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O either linear or interleave order with the Linear Burst Order (LBO)

Contextual Info: GS8162xxBB-xxxV 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs Features 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Flow Through/Pipeline Reads Functional Description Applications SCD and DCD Pipelined Reads The GS8162xxBB-xxxV is an SCD Single Cycle Deselect and DCD

Contextual Info: Preliminary GS816272CC-333/300/250/200/150 209-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 256K x 72 18Mb S/DCD Sync Burst SRAMs Features Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user

Contextual Info: GS816272CC-300M 300 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 256K x 72 18Mb S/DCD Sync Burst SRAMs 209-Bump BGA Military Temp Features Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user via the FT mode . Holding the FT mode pin low places the RAM in

GS816272CC-150V

Abstract: GS816272CC-200V GS816272CC-250V QC2004
Contextual Info: Preliminary GS816272CC-xxxV 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 256K x 72 18Mb S/DCD Sync Burst SRAMs 209-Bump BGA Commercial Temp Industrial Temp Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation

13005 A

Contextual Info: GS816218/36BB-200M GS816218/36BD-200M 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs 119- & 165-Bump BGA Military Temp Features 200 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user

Contextual Info: GS816218/36D B/D -400/375/333/250/200/150 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 119 & 165 BGA Commercial Temp Industrial Temp Features 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O either linear or interleave order with the Linear Burst Order (LBO)

Contextual Info: GS816218/36D B/D -xxxV 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 119 & 165 BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan

Contextual Info: Preliminary GS8162xxBB-xxxV 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs Features 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation

Contextual Info: Preliminary GS816218/36B B/D 119- & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs Features 300 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation

GS816218BB-150V

Abstract: GS816218BB-200V GS816218BB-250V
Contextual Info: Preliminary GS8162xxBB-xxxV 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs Features 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML