GS10V Search Results

YTF842

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ^r-MOSn H IG H S P E E D , H I G H CURR ENT SW ITCHING A P P L I C A T I O N S . IN D USTRIAL A PP LIC ATIO N S CHOPPER R E G U L A T O R , D C - D C C ONVERTER AND MOTOR U n it D R IV E A P P L I C A T I O N S .

2SK2574

Abstract: AJ04 CR10000
Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2574 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications •

125OC

Abstract: 55N50F
Contextual Info: HiPerRFTM Power MOSFETs IXFN 55N50F VDSS ID25 F-Class: MegaHertz Switching RDS on D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

2SK2577

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2577 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications •

333Q

Abstract: 2SK2790
Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2790 Tentative Silicon N-Channel Power F-MOS • Features • Low ON-resistance Rds(oii) • High-speed switching • No secondary breakdown ■Applications • High-speed switching • Motor drive Absolute Maximum Ratings

K2022

Abstract: T151 A2349 2SK2022-01
Contextual Info: 2SK2022-01 MR FUJI P O W E R M O S-F ET N-CHANNEL SILICON POWER MOS-FET F A P - IIA • Features S E R IE S Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V cs= ±30V Guarantee

2SK1820-01L

Abstract: A2253
Contextual Info: 2SK1820-01 L,S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Voss - ± 3 0 V Gurantee • Avaianche-proof

A2292

Abstract: 2SK1942-01 SC-65
Contextual Info: 2SK1942-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES I Features Outline Drawings 'High speed switching >L>w on-resistance 'No secondary breakdown ' L w driving power 'High voltage ' V CS = ±30V Guarantee •Avalanche-proof I Applications

ZVN4310A

Abstract: ZVN4424AC
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 100 Volt vDS * * < W “ °-5Q Spice model available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tarnjj=25°C

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 JULY 1994_ FEATURES * 60 V o lt VDS * R e p e titive ava la n che ra tin g R DS on = * N o tra n s ie n t p ro te c tio n re q u ire d * C h a racterised fo r 5V lo g ic d riv e APPLICATIONS

HUF75623P3

Abstract: AN9321 AN9322 TB334
Contextual Info: HUF75623P3 in terrii N o vem ber 1999 D ata S h eet File N u m b er 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance ‘ SOURCE r DS ON = 0 .0 6 4 i2 , VGS = 1 0 V • Simulation Models

2SK1834

Contextual Info: Panasonic Pow er F-M O S FETs 2SK1834 Silicon N-Channel Power F-MOS Unit : mm •Features • • • • 4.2±0.2 Avalanche energy capability guaranteed : EAS > 15mJ V< ;ss=±30V guaranteed High-speed switching : tf = 25ns No secondary breakdown 03.1±O.1

2SK2575

Contextual Info: Panasonic Power F-M OS FETs 2SK2575 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • •

2SK2772

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2772 Tentative Silicon N-Channel MOS For high-speed switching Unit : mm • Features • High-speed switching • High drain-source voltage (V d s s ) Absolute Maximum Ratings (Ta = 25°C) Param eter me Symbol Rating

CC3-101

Contextual Info: MITSUBISHI Neh POWER MOSFET FS16SM-6 HIGH-SPEED SWITCHING USE FS16SM-6 OUTLINE DRAWING Dimensions in mm 4.5 . 15.9MAX. -4 4 - 5.45 0.6 • V dss . 300V • rDS ON (MAX) . 0.33Í2

2SK888

Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: 2SK888 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in mm DRIVE APPLICATIONS. 10-3 MAX. • Low Drain-Source ON Resistance : R p g ^ g N .14i2 Typ.)

Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ISSUE 1 - NOVEMBER 1995 ZDM4306N - D i L -1- - * - 1 Gì D1 I— L — L_I S i D? I I — 1— 1 G2 1 1 S» Da L I PARTMARKING DETAIL - M4306N ABSOLUTE M A X IM U M RATINGS. PARAMETER

ZVN3306A

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 60 Volt V,DS =5Q DSon} ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamti-25°C b 270 mA Pulsed Drain Current