GS SOT23 Search Results

GS SOT23 Result Highlights (5)

Part	Manufacturer	Description	Download
BAV99	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 100 V, 0.215 A, SOT23	Datasheet
TBAV70	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
TBAS16	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
BAV70	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 100 V, 0.215 A, SOT23	Datasheet

GS SOT23 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: AO3400A 30V N-Channel MOSFET SOT23 Product summary VDS ID Top View Bottom View 30V at VGS =10V 5.7A R DS(ON)(at V GS =10V) R DS(ON)(at V GS = 4.5V) < 26.5mΩ < 32mΩ R DS(ON)(at V GS = 2.5V) < 48mΩ General Descrlptlon D The AO3400A combines advanced trench MOSFET	Original	AO3400A AO3400A KSM3400A	PDF
2222ll Abstract: 10LLS ST C 236 DIODE 0605T Contextual Info: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5	OCR Scan	VN10LE/LLS, VN0605T, VN0610LL, VN2222LL 10LLS 0605T 0610LL 2222LL S-58620-- 21-Jun-99 ST C 236 DIODE	PDF
222ll Abstract: 10LLS Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number rDS(on) Max (Q) V (BR)DSS M in (V) VN10LLS 5 @ V GS = 1 0 V VN0605T 5 @ V Gs = 10 V 60 VN0610LL 5 @ V GS = 10 V VN2222LL 5 FEATURES @VGS = 10V VGS(th)(V)	OCR Scan	VN10LLS, VN0605T, VN0610LL, VN2222LL VN10LLS VN0605T VN0610LL VN2222LL S-04279-- 16-Jul-01 222ll 10LLS	PDF
Contextual Info: IC MOSFET SMD Type N-Channel Enhancement Mode MOSFET KI2306 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features ● RDS ON =0.030Ω@V GS =10V 1 0.55 ● RDS(ON) =0.052Ω@V GS =2.5V +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON) =0.035Ω@V GS =4.5V 0.4 3 2	Original	KI2306 OT-23-3 300us,	PDF
Contextual Info: SÌ2305DS VISHAY Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY V ds (V) -8 r I d (A) DS(ON) (-2) 0.052 @ V GS = —4.5 V ± 3 .5 0.071 @ V GS = -2 .5 V ±3 0.108 @ V GS = —1.8 V ±2 TO-236 (SOT-23) :-£ÿ Top View S i2305D S (A5)*	OCR Scan	2305DS O-236 OT-23) i2305D S-56947-- ec-98	PDF
Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23	Original	BSS215P PG-SOT23 IEC61249-2-21 H6327:	PDF
bsr802 Abstract: BSR802N GPS09473 HLG09474 L6327 Contextual Info: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23	Original	BSR802N PG-SC59 L6327 bsr802 BSR802N GPS09473 HLG09474 L6327	PDF
DIODE D38 06 Abstract: MARKING LAS Contextual Info: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 3.8 ID A • Avalanche rated • Footprint compatible to SOT23	Original	BSR202N PG-SC-59 PG-SC-59 L6327 DIODE D38 06 MARKING LAS	PDF
DIODE D29 -08 Contextual Info: Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23	Original	BSR302N PG-SC-59 L6327 DIODE D29 -08	PDF
DIODE D38 -06 Abstract: BSR202N GPS09473 HLG09474 L6327 gs 106 Contextual Info: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23	Original	BSR202N PG-SC-59 L6327 DIODE D38 -06 BSR202N GPS09473 HLG09474 L6327 gs 106	PDF
PG-SOT23 Abstract: BSS316N JESD22-A114 L6327 Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23	Original	BSS316N PG-SOT23 L6327: PG-SOT23 BSS316N JESD22-A114 L6327	PDF
sot23 MARKING 72s Abstract: 2n7002 MARKING 2N7002 di 2N7002 MARKING 72S marking SOT23 V 4 diode 2N7002 JESD22 JESD22-A114 L6327 PG-SOT23 Contextual Info: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features V DS 60 V V GS=10 V 3 Ω V GS=4.5 V 4 • N-channel R DS on ,max • Enhancement mode • Logic level ID • Avalanche rated 0.3 • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant	Original	2N7002 PG-SOT23 L6327: sot23 MARKING 72s 2n7002 MARKING 2N7002 di 2N7002 MARKING 72S marking SOT23 V 4 diode 2N7002 JESD22 JESD22-A114 L6327 PG-SOT23	PDF
BSS306N Abstract: SWs SOT23 Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23	Original	BSS306N PG-SOT23 L6327: BSS306N SWs SOT23	PDF
Contextual Info: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features V DS 60 V V GS=10 V 3 Ω V GS=4.5 V 4 • N-channel R DS on ,max • Enhancement mode • Logic level ID • Avalanche rated 0.3 • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant	Original	2N7002 PG-SOT23 2N7002 L6327:	PDF

BSR802N Abstract: GPS09473 HLG09474 L6327 Contextual Info: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23	Original	BSR802N PG-SC59 L6327 BSR802N GPS09473 HLG09474 L6327	PDF
BSR202N Abstract: GPS09473 HLG09474 L6327 DIODE D38 -06 DIODE D38 06 Contextual Info: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23	Original	BSR202N PG-SC-59 L6327 BSR202N GPS09473 HLG09474 L6327 DIODE D38 -06 DIODE D38 06	PDF
Contextual Info: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23	Original	BSR202N PG-SC-59 L6327	PDF
BSS306N Abstract: JESD22-A114 L6327 PG-SOT23 Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23	Original	BSS306N PG-SOT23 L6327: BSS306N JESD22-A114 L6327 PG-SOT23	PDF
marking SYs Contextual Info: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23	Original	BSS316N IEC61249-2-21 PG-SOT23 H6327: marking SYs	PDF
BSS306N Abstract: L6327 PG-SOT23 Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23	Original	BSS306N PG-SOT23 L6327: BSS306N L6327 PG-SOT23	PDF
Contextual Info: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features 60 V V GS=10 V 3 Ω V GS=4.5 V 4 V DS • N-channel R DS on ,max • Enhancement mode • Logic level • Avalanche rated 0.3 ID • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant	Original	2N7002 PG-SOT23 IEC61249-2-21 2N7002 PG-SOT-23 H6327:	PDF
Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23	Original	BSS306N PG-SOT23 IEC61249-2-21 H6327:	PDF
Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23	Original	BSS306N IEC61249-2-21 PG-SOT23 H6327:	PDF
BSR802N Abstract: GPS09473 HLG09474 L6327 diode DS10 D38A Contextual Info: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23	Original	BSR802N PG-SC59 L6327 BSR802N GPS09473 HLG09474 L6327 diode DS10 D38A	PDF

GS SOT23 Search Results

GS SOT23 Result Highlights (5)

GS SOT23 Datasheets Context Search

2222ll

222ll

bsr802

DIODE D38 06

DIODE D29 -08

DIODE D38 -06

PG-SOT23

sot23 MARKING 72s

BSS306N

BSR802N

BSR202N

BSS306N

marking SYs

BSS306N

BSR802N