GS 9521 Search Results

IRFTS9342

Abstract: irfts9342tr IRLML9301TR irlml9301trpbf IRFTS9342TRPBF
Contextual Info: PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDSS R DS on max Qg(typ.) 30V 13.8m @V GS = 10V

88a diode

Contextual Info: PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDSS R DS on max Qg(typ.) 30V 13.8m @V GS = 10V

Contextual Info: PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDSS R DS on max Qg(typ.) 30V 13.8m @V GS = 10V

Contextual Info: PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDSS R DS on max Qg(typ.) 30V 13.8m @V GS = 10V

Contextual Info: PD-9.1069 International ioR R ectifier IRF840LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

pal 011

Abstract: Ultra High Voltage Hexfets Pal011 mosfet ir 250 n ne 555 diode
Contextual Info: PD-9.1070 International ioR Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

IOR 336

Abstract: marking code AAAE IRFI740GLC IRFI840G marking AAAE
Contextual Info: PD-9.1209 International S Rectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

5 hp DC motor speed control using scr

Abstract: pwm based bidirectional dc motor speed KBIC-240 scr speed control dc motor microcontroller based speed control of ac motor kbpb-125 remote speed control of ac motor kbmm 225 kbmm-225d/9451 ac motor speed control with scr
Contextual Info: “Stock” Variable Speed AC & DC Motor Controls & Accessories KB Electronics, Inc. Selection Guide – GS-118A AC MOTOR SPEED CONTROLS Inverters Ratings KBVF AC Chassis (IP-20) Inverters Model Part No. The KBVF Adjustable Frequency Drive is designed to provide variable

diode sy 171 10

Abstract: D 304 x IRF1010 IRFBC40LC "DIODE" SY 171 1 g diode sy 171 SD 336 Ultra High Voltage Hexfets
Contextual Info: PD-9.1070 International Iiqr IRectifier IR FB C 4 0 LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

smd diode 1016

Abstract: diode T31 Marking marking code B0 SMD diode smd diode bd N-Channel MOSFET 200v smd diode marking code jl an
Contextual Info: PD-9.1090 International Ie?r1Rectifier IRL640S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V Fast Switching

IRL640

Abstract: IRF1010 IRL640A 91089
Contextual Info: PD-9.1089 International H ü Rectifier IRL640 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching Ease of Paralleling Simple Drive Requirements

MOSFET SMD MARKING CODE 618

Abstract: SMD DIODE MARKING S28 diode smd marking code 421 MARKING CODE CGA smd code marking js smd diode marking JC AN-994 IRL640S SMD-220 42s42
Contextual Info: PD-9.1090 International ioR Rectifier IRL640S HEXFET Power M O SFE T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching

IRFS1Z0

Abstract: sot-89 MARKING CODE 74 Diode IOR 10 dc SOT89 MARKING CODE 5A voltage regulator AN-994 IR s27 IRFS1Z0 marking GGT DIODE rectifier sot-89
Contextual Info: PD-9.997A International Rectifier IRLSOZO HEXFET Pow er M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Surface Mount Available in Tape & Reel Logic-Level Gate Drive RDS on Specified at V gs=5.0V & 10V

QQ17725

Abstract: 50pa60c
Contextual Info: INTERNATIONAL RECTIFIER bSE 4Ö5545E QQ17725 G44 ru -^ .o o / Provisional Data Sheet International S Rectifier HEXFRED HFA50PA60C u l t r a f a s t , s o f t r e c o v e r y d io d e Major R a tin gs and Characteristics per Le g C haracteristics U nits

EIA-541

Abstract: irf MOSFET p-CH IRF7507PBF
Contextual Info: PD - 95218 IRF7507PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 N-CHANNEL MOSFET

IRF9521

Abstract: f9520 IRF9520 Samsung
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure

f9520

Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability

EIA-541

Abstract: IRF7807D1 IRF7353D2PBF
Contextual Info: PD- 95215A IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode

Contextual Info: PD- 95215A IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode

10BQ040

Abstract: IRF7809A IRF7809AV 13ab
Contextual Info: PD - 95212A IRF7809AVPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% Tested for Rg • Lead-Free

10BQ040

Abstract: IRF7809A IRF7809AV
Contextual Info: PD - 95212A IRF7809AVPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% Tested for Rg • Lead-Free

95212

Contextual Info: PD - 95212 IRF7809AVPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free Description This new device employs advanced HEXFET Power

Contextual Info: PD- 95215 IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode

IRF9120

Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Contextual Info: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET