GS 7103 Search Results

Contextual Info: TN2640 Supertex Inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) '□(ON) «C s (max) (max) (min) SO-8 TO-92 Diet 400V 5.0fi 2.0V 2.0A TN2640LG TN2640N3 TN2640ND M IL visual screening available.

Contextual Info: TN2640 Supertex inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) SO-8 TO-92 Diet 400V 5.0Q. 2.0V 2.0A TN 2640LG T N 2640N 3

DM-350D1

Abstract: Regulated Power supply using 7805 7805 CHECKING DM-350A1 DM-350A2 LM309K DM-350 DATEL DM-350A2 DM350 viking connector 15 pin
Contextual Info: □ATEL SYSTEMS, INC. 31/2 digit m in ia t u r e LOW COST DIGITAL PANEL METER E tra c t No. GS-OO S-27959 Large 0.43” 11 mm LED Display Very Low Cost, $69. Choice o f U nipolar or Bipolar 1.999V Ranges Choice o f AC or 5VDC Power Supply Very Low Power C onsum ption fo r Por­

TELEDYNE CRYSTALONICS

Abstract: 50T60 CAG50
Contextual Info: G E N E R A L PURPOSE CAG 50D CAG 50T FET ANALOG GATE QUAD SPST 60 OHM M A X . Ron WORKS D IR E C TLY FROM LOGIC HIGH LOGIC NOISE IM M U N IT Y BR E AK BEFORE M AKE ACTION ± 10V S IG N A L LEVELS AC OR DC M A X IM U M RATIN GS PAR AM ETER S YM BO L M IN .

CP650

Abstract: CP651 2N4448 2N4445 Crystalonics TELEDYNE teledyne crystalonics CP652 CP653
Contextual Info: CP650 CP651 CP652 CP653 PO W RFET SILICON E P IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 424, PG. 58 • • • • LOW R d s - 5 Ohms TYPICAL LOW Cgd - 20 pfd TYPICAL HIGH lDSS - 0.5 Amp TYPICAL HIGH gm 150,000 /xmhos TYPICAL ELECTRICAL DATA

2N6568

Abstract: Crystalonics TELEDYNE CRYSTALONICS teledyne transistor
Contextual Info: ULTRA LOW Ro n SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 4 5 6 , PG. 59 • LOW Rds - TA Ohms MAXIMUM • HIGH l DSS- 5 0 0 mA MINIMUM ELECTRICAL DATA A B S O LU TE M A X IM U M R A T IN G S PAR A M E TE R SYM BOL

TP2504N8

Abstract: A773 A773* Transistor P024 TP2502 TP2502ND TP2504ND 43AA
Contextual Info: S u p e r te x in c TP2502 TP2504 . Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V oss/ R d S<ON ^ G S ith ) B V dgs max) (m ax) -20V 2.0Q -2.4V -40V 2.0CÌ -2.4V W n) (min) Order Num ber / Package TO-243AA*

TELEDYNE CRYSTALONICS

Abstract: 2N4447 2N4445 cgel CP650 2N4448 CP653 N4446 2n4446
Contextual Info: CP650 thru CP653 2N4445 thru 2N4448 TYPICAL CHARACTERISTICS GATE LEAKAGE CURRENT VS. TEMPERATURE < > o ►O < i o oc Z -20 - -2 5 +50 TEMPERATURE Ro~ INCREASES +75 too -120 (°C TEMPERATURE 0 .7 % / ° C I gss JUNCTION CAPACITANCE VS. VOLTAGE (°Q DOUBLES EACH !0 ° C

2N5543

Abstract: 2N5544
Contextual Info: HIGH VOLTAGE 2N5543 2N5544 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 559, PG. 60 FEATURES • HIGH BV[ GO> 300V 2N5543) • LOW CAPACITANCE APPLICATIONS • HIGH VOLTAGE CURRENT SOURCE • HIGH VOLTAGE SWITCH ELECTRICAL DATA ABSOLUTE M AXIM U M RATINGS

foto transistor

Abstract: FF626 teledyne transistor phototube
Contextual Info: FOTO F E T SILICON E P ITA X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 400, PG. 57 • • • • ULTRA HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT ELECTRICAL DATA A B S O L U T E M A X IM U M R A T IN G S D rain to Source V olta ge

gs 7103

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30UMH-3 HIGH-SPEED SWITCHING USE FS30UMH-3 • 2.5V DRIVE • VDSS . 150V • rDS ON (MAX) .87mQ • Id .

fotofet

Abstract: ALG TRANSISTOR FF412
Contextual Info: FO TO FET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 446, PG. 58 • • • • HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE LOW Ron ELECTRICAL DATA 4 270 MAX. A B S O LU TE M A X IM U M R A T IN G Drain to Source Voltage

2N6449

Abstract: CISS2 2N6450
Contextual Info: HIGH VOLTAGE 2N6449 2N6450 SILICON E PI TA X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 5 5 9 , PG. 6 0 TO-39 Package • HIGH BV qss • • •300V MIN 2N6449 • HIGH POWER RATING . . . 5W ELECTRICAL DATA 00370 350dia 0 ^ 1 5 DIA

gs 7103

Contextual Info: MITSUBISHI Nch POWER MOSFET j FS50UMJ-03 ; HIGH-SPEED SWITCHING USE FS50UMJ-03 * • 4V DRIVE • VDSS . 30V • rDS ON (MAX) . 19mi2 • Id .

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

LD2SA

Abstract: BTS 308 INTEL I7 prefetch MSR 7A SF fds 4418 STi 5197 register configuration instruction set architecture intel i7 wn 537 a 8086 mnemonic opcode intel 8086
Contextual Info: Intel IA-64 Architecture Software Developer’s Manual Volume 3: Instruction Set Reference Revision 1.1 July 2000 Document Number: 245319-002 THIS DOCUMENT IS PROVIDED “AS IS” WITH NO WARRANTIES WHATSOEVER, INCLUDING ANY WARRANTY OF MERCHANTABILITY,

MOSFET 20 NE 50 Z

Abstract: 500v n channel
Contextual Info: MITSUBISHI Neh POWER MOSFET FS14SM-10 |_ HIGH-SPEED SWITCHING USE FS14SM-10 OUTLINE DRAWING 15.9MAX. • VDSS . 500V • rDS O N (M AX ) 1 I. 3, 4

2N5114

Abstract: 2N5115 field effect transistors TELEDYNE CRYSTALONICS
Contextual Info: SWITCHING 2N5114 2N5115 P-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 4 60, PG. 60 For Analog Switch, Commutators and Choppers ABSOLUTE M AXIM UM RATINGS PAR A M E TE R SYM BOL MAX. U N IT Gate to Drain Voltage BVgdo 30 V Gate to Source Voltage B V gso

44i2

Contextual Info: MITSUBISHI Neh POWER MOSFET j FS3UM-10 j HIGH-SPEED SWITCHING USE I FS3UM-10 • VOSS . 500V • ros ON (MAX) . 4.4Í2

CP643

Abstract: Field Effect Transistor TMF18
Contextual Info: PO W RFET SILICON EP IT AX IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 446, PG. 58 • FOR HIG H D Y N A M IC RANGE R.F. A M P LIFIE R S • SPECIFIED FOR H.F. BAND - USEABLE TH R U 500 MHz • LOW NOISE FIG URE D IR E C T FROM 50 Ohm L IN E 2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50VS-03 HIGH-SPEED SWITCHING USE FS50VS-03 OUTLINE DRAWING I q J w e Q w r 10V DRIVE rDS ON (MAX). 23m i2 . 50A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS70VS-03 HIGH-SPEED SWITCHING USE FS70VS-03 OUTLINE DRAWING I q J w e Q w r o +i CO C\i q w e r 10V D R IV E V d s s . 3 0 V Dimensions in mm q o -

Contextual Info: TELEDYNE COMPONENTS 2flE 0*il7fciQ2 OGObSS? a • T> -T ' 3 5 ' a s VERY LOW Ro n SWITCHING CM 697 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 .230 MAX. .185 ±.005- • LOW RDS - 150hms MAXIMUM • LOW Vp - 3 Volts MAXIMUM