GS 34 QG Search Results

882N03MS

Abstract: 882N03
Contextual Info: BSC882N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 34 V V GS=10 V 2.6 mΩ V GS=4.5 V 3.3 ID

BSC883N03MS

Abstract: 883N03MS
Contextual Info: BSC883N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 34 V V GS=10 V 3.8 mΩ V GS=4.5 V 4.6 ID

884N03MS

Abstract: BSC884N03MS
Contextual Info: BSC884N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 34 V V GS=10 V 4.5 mΩ V GS=4.5 V 5.4 ID

BSO203SP

Abstract: IEC61249-2-21 JESD22-A114 203SP f89a
Contextual Info: BSO203SP H OptiMOS P-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 21 mΩ V GS=2.5 V 34 ID -8.9 A • Super Logic Level (2.5V rated)

Contextual Info: BSO203P H OptiMOS P-Power-Transistor Product Summary Features V DS • dual P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 21 mΩ V GS=2.5 V 34 ID -8.2 A • Super Logic Level (2.5V rated)

Contextual Info: BSO203SP H OptiMOS P-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 21 mΩ V GS=2.5 V 34 ID -8.9 A • Super Logic Level (2.5V rated)

203P

Abstract: BSO203P IEC61249-2-21 JESD22-A114 d82 diode
Contextual Info: BSO203P H OptiMOS P-Power-Transistor Product Summary Features V DS • dual P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 21 mΩ V GS=2.5 V 34 ID -8.2 A • Super Logic Level (2.5V rated)

FDD3670

Contextual Info: FDD3670 100V N-Channel PowerTrenchÒ MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V

34A-100

Abstract: FDD3670
Contextual Info: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V

Contextual Info: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V

CBVK741B019

Abstract: F63TNR FDD3670 FDD6680
Contextual Info: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V

Contextual Info: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V

8SS138

Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
Contextual Info: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T

BSN012N03LS

Contextual Info: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61

Contextual Info: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61

Contextual Info: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61

Contextual Info: IPA50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

IPA50R199CP

Contextual Info: IPA50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

0906NS

Contextual Info: BSC0906NS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 4.5 mW ID 63 A QOSS 8.6 nC QG(0V.10V)

5r199p

Abstract: D66A
Contextual Info: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

5r199p

Contextual Info: IPW50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

9R1K0c

Contextual Info: IPI90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications

9r340c

Contextual Info: IPI90R340C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 0.34 Ω 94 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications

5R199P

Abstract: 5R199 IPP50R199CP JESD22
Contextual Info: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant