GS 32 Search Results

Contextual Info: 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST FT LTR DESCRIPTION Y REVISED PER ECO-05-12562 SEE DETAIL 1 8 . 2 6 [. 7 1 9] DWN APVD 1 1 /8 /0 5 SS GS [I CL

2sj111 fet

Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
Contextual Info: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)

tc4532

Abstract: TC4532BP
Contextual Info: ROTTSMfl 0024241 32b • T0S2 LIE D C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC_ TC4532BP TOSHIBA L 0 G I C / H E H 0 R Y TC4532BP 8-BIT PRIORITY ENCODER TC4532BP i s e i g h t b i t e n c o d e r w h ic h d e t e c t s "H " l e v e l o f t h e h i g h e s t o r d e r among e i g h t i n p u t s i g n a l s

STD1NB50

Abstract: SGS-Thomson mosfet ipak
Contextual Info: STD1NB50 N - CHANNEL 500V - 7.5Ω - 1.4A - IPAK PowerMESH MOSFET TYPE V DSS R DS on ID STD1NB50 500V < 9Ω 1.4 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 7.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

2sj332

Abstract: 2SJ332S Hitachi DSA001651
Contextual Info: 2SJ332 L , 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SK2121

Abstract: Hitachi DSA001652
Contextual Info: 2SK2121 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter

Hitachi DSA001652

Contextual Info: 2SK2322 L , 2SK2322(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter

DIODE ED 34

Contextual Info: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3

2SJ245

Abstract: Hitachi DSA001651
Contextual Info: 2SJ245 L , 2SJ245(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

Contextual Info: YTF632 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ar-MOSn INDUSTRIAL APPLICATIONS HI GH S P E E D , H I G H CURRENT SWI T C H I N G A P P L I C A T I O N S . Unit CHOPPER R E G U L A T O R , O C - D C C O N V E R T E R AND HOTOR D R I VE A P P L I C A T I O N S .

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

FN521

Abstract: FN 521 UFN522 UFN523 UFN520
Contextual Info: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

K2837

Abstract: toshiba k2837 Transistor K2837 toshiba transistor k2837 transistor 2SK2837 k28*37 k2837 toshiba transistor K2837 toshiba
Contextual Info: TO SHIBA 2SK2837 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2837 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 15.9 M AX. •

5025BN

Abstract: apt5025 APT5025BN APT5030BN 5007 5030BN N mos 100v 100A
Contextual Info: D TO-247 G S POWER MOS IV APT5025BN 500V 23.0A 0.25Ω APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT60M90JN

Abstract: 60M90JN
Contextual Info: S S D D G G 27 2 T- SO APT60M90JN 600V 57A 0.090Ω S "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

Contextual Info: APT40M35JVR 93A 0.035Ω 400V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

diode 304

Abstract: 11200-1 B2VR 72 RG
Contextual Info: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

Contextual Info: FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description Features • 32 A, 60 V. RDS ON = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters

ld1014d

Abstract: Lovoltech pn diode POWERJFET
Contextual Info: PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

marking xa

Abstract: NEC RELAY PG 2SK3408
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4-V power source • Low on-state resistance