GS 20 CIRCUIT DIAGRAM Search Results

IRF840R

Abstract: RF840 IRF840 IRF841R IRF842R IRF843R M2R DIODE
Contextual Info: Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R File N u m b er 2034 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0.850 and 1.10 TE R M IN A L DIAGRAM Features: • ■ ■ ■ ■ Single pulse avalanche energy rated

IRFD9123

Abstract: IRFD9120 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z
Contextual Info: Rugged Power MOSFETs File N u m b e r 2285 IRFD9120 IRFD9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V rDston = 0.6 O and 0.8 Q TERMINAL DIAGRAM Features:

Contextual Info: 4532B INTERNATIONAL, INC CMOS 8-BIT PRIORITY ENCODER FEATURES CONNECTION DIAGRAM • Converts from 1 of 8 binary • Provides cascading features to handle any number of inputs • group select indicates one or more priority inputs • Standardized, sym m etrical output characteristics

BSM 214 A

Abstract: 78AK
Contextual Info: SIEMENS SIMOPAC Module V DS ¡0 =100V =2x125 A R = 0.013 i l • • • • • • DS on BSM 214 A Power module Half-bridge N channel Enhancem ent mode Package with insulated metal base plate Package outline/Circuit diagram : 2a11 Type O rdering Code

4532B

Abstract: 4000B CMOS 4000B series device gs1085
Contextual Info: 4532B INTERNATIONAL, INC. CMOS 8-BIT PRIORITY ENCODER FEATURES CONNECTION DIAGRAM v00 E0 GS0302 01 00 00 1 1 1 1 I LI i | 15 14 13 12 11 10 9 • Converts from 1 of 8 binary • Provides cascading features to handle any number of inputs • group select indicates one or more priority inputs

FR 151 diode

Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Contextual Info: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)

siemens bsm 284 f

Abstract: BSM284F
Contextual Info: SIEMENS BSM 284 F SIMOPAC Module V DS / d = 800 V = 2 X 20 A ^ D S on = 0.48 £2 • • • • • • • Power m odule Half-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Package outline/C ircuit diagram : 2a1 Type

43403

Abstract: FRF6766D FRF6766H FRF6766M FRF6766R CGQD
Contextual Info: Radiation-Hardened MOSFETs File N um b er 2322 FRF6766M, FRF6766D, FRF6766R, FRF6766H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 30 A, 200 V rDs<on) = 0.85 fi TERM INAL DIAGRAM Features: • Linear transfer characteristics

Contextual Info: Ç IEM FM S SIMOPAC MOSFET Module BSM 691 F Vds = 1000 V = 6 x 4.8 A ^DS on = 2.5 ß lD • • • • • • • Power module 3-phase full-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 3 a 1)

Contextual Info: STT7P2UH7 P-channel 20 V, 0.0195 Ω typ., 7 A STripFET VII DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features SOT23-6L •  Figure 1: Internal schematic diagram Order code VDS RDS on max ID STT7P2UH7 20 V 0.0225 Ω @ 4.5 V

IRFP9240R

Abstract: IFP92 IRFP9243R 9243 IRFP IRFP9240 IRFP9241 IRFP9241R IRFP9242R
Contextual Info: _ Rugged Power MOSFETs File Num ber IRFP9240R, IRFP9241R, IRFP9242R, IRFP9243R 2294 Avalanche-Energy-Rated P-Channel Power MOSFETs -10 A and -12 A, 200 V and 150 V rDston = 0.50 fi and 0.70 fi TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated

BSM 204-A

Contextual Info: SIEMENS SIMOPAC Module V DS / D R D S o n BSM 204 A = 50 V = 2 x 200 A - 4.5 mi2 • Power module • Half-bridge • N channel • Enhancement mode • Package with insulated metal base plate • Package outline/Circuit diagram: 2a11 Type Ordering Code

Contextual Info: STS9P2UH7 P-channel 20 V, 0.0195 Ω typ., 9 A STripFET VII DeepGATE™ Power MOSFET in a SO-8 package Datasheet - production data Features 5 8 Order code VDS RDS on max ID STS9P2UH7 20 V 0.0225 Ω @ 4.5 V 9A 4 1 •  SO-8 Figure 1: Internal schematic diagram

Contextual Info: SIEMENS SIMOPAC MOSFET Module BSM 191 C VDS = 1000 V lD = 28 A ^DS(on) = 0.37 fì • • • • • • Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig . 1 a') Type Ordering code BSM 191 (C)

100krads

Abstract: FRL6798D FRL6798H FRL6798M FRL6798R
Contextual Info: Radiation-Hardened MOSFETs F ile N u m b e r 2321 FRL6798M, FRL6798D, FRL6798R, FRL6798H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 5.5 A, 200 V I*D S (o n ) = 0.4 n TERMINAL DIAGRAM Features: • Linear transfer characteristics

IRF9241

Abstract: irf9243 IRF9240 mosfet IRF9240 IRF9242
Contextual Info: Rugged Power MOSFETs IRF9240, IRF9241 IRF9242, IRF9243 File Number 2279 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -9 A and -11 A, -150 V and -200 V ros on = 0.5 n and 0.7 O Features: • Single pulse avalanche energy rated ■ SOA is pow er-dissipation lim ite d

Contextual Info: F100165 Universal Priority Encoder FAIRCHILD A Schlumberger Company F 100K EC L Product Description Connection Diagrams The F 100165 contains eight input latches with a common Enable ~E followed by encoding logic which generates the binary address of the highest priority input

Mosfet

Abstract: SSF3605S
Contextual Info: SSF3605S 30V P-Channel MOSFET D DESCRIPTION The SSF3605S uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =-30V,ID =-15A

Contextual Info: SIEMENS SIMOPAC MOSFET Module VDS lo ^ D S o n • • • • • • • BSM 191 F (C) = 1000 V = 28 A = 0.42 Q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a ’ ) Type

MC-16LX

Abstract: FUJITSU FLASH MCU Programmer for F2MC-16LX Specifications MB90F455 MB90F574A MB90F497G mb90f546g MB90F372 mb90f591a MB90F867 MB90F562B
Contextual Info: FUJITSU FLASH MCU Programmer for 2 F MC-16LX Specifications ii FUJITSU FLASH 2 MCU Programmer for F MC-16LX Specifications Version 2.00 2 September 2003 Software version: V01L11 2002 FUJITSU LIMITED Printed in Japan 1. Circuit diagrams utilizing Fujitsu products are included as a mean of illustrating typical semiconductor

BSM254F

Abstract: BSM254
Contextual Info: SIEMENS SIMOPAC Module VDS Io R BSM 254 F = 500 V = 2 x 35 A D S on = 0 . 1 7 LI • Power module • Half-bridge • FREDFET • N channel • Enhancement mode • Package with insulated metal base plate • Package outline/Circuit diagram: 2a1) T y p e _

Contextual Info: AN ALO G D E V IC E S □ FEATURES Update Rates to 125MHz Low Glitch Energy Complete Composite Inputs On-Chip Reference Voltage Single -S.2V Power Supply Monolithic Video D/A Converter AD9700 AD9700 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Raster Scan Displays

AD9700BD

Abstract: AD9700 AD9700BW AD9700SD AD9700BE AD9700SE RS-170 RS-343 bright random
Contextual Info: □ ANALOG DEVICES FEATURES Update Rates to 125MHz Low Glitch Energy Complete Composite Inputs On-Chip Reference Voltage Single —5.2V Power Supply Monolithic Video D/A Converter AD9700 AD9700 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Raster Scan Displays Color Graphics

Mosfet

Abstract: SSFD6035
Contextual Info: SSFD6035 60V P-Channel MOSFET D DESCRIPTION The SSFD6035 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =- 60V,ID =-26A