GS 05 24 GD 2 Search Results

D-73277

Abstract: gs 05 24 gd 2 gs 05 LEUZE electrical electronic guide GS05 2.4 g gs 05 24 gd 1 free transistor light sensors
Contextual Info: Leuze electronic GS 05 Forked photoelectric sensors Dimensioned drawing 2mm 5mm 10 - 30 V DC l Fast amplifier with high switching frequency for detection of short events e.g. gaps between labels l Universal application due to short circuit and polarity reversal protected PNP and NPN

Contextual Info: PD - 96013 IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS

gs 05 24 gd 2

Contextual Info: Tem ic SÌ9933DY Siliconix Dual P-Channel Enhancement-Mode MOSFET Product Summary VD S V -2 0 r DS(on) (£2) I d (A) 0 .1 1 @ V G S = - 4 .5 V ± 3 .4 0.15 @ V GS = - 3 . 0 V ± 2 .9 0.19 @ V GS = - 2 .7 V ± 2 .6 S2 o SO-8 [T jG [T ~T~1 D j s2 [jT 6 1 D2

Contextual Info: PD - 96975 IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance

GY 123

Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Contextual Info: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122

EIA-541

Abstract: IRF7501 diode code yw
Contextual Info: PD - 95345 IRF7501PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6

Contextual Info: T e m ic SMD15N06 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) 60 0.10 lDa (A) 15 D Q DPAK (T O -252) D •<-¿3 n°n G S Ô s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

SUB60N06-08

Contextual Info: T e m ic SUB60N06-08 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (ß ) I d (A) 0.008 603 60 D p TO-263 ( 1 o jj u y DRAIN connected to TAB G D S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

SD215

Contextual Info: High-Speed Analog N-Channel DMOS FETs calcxrt CORPORATION \J S D 2 1 1 /S D 2 1 3 /S D 2 1 5 FEATURES DESCRIPTION High Input to Output Isolation . 120dB Low On R esistan ce. 30 Ohm

Contextual Info: UN I V E R S A L S E M I C O N D U C T O R 4TE D • T3t.a3Ml 0 G D Q 1Q 7 22fi ■ UNIVERSAL UNV SD5000, SD5001, SD 5002 N-Channel Enhancement Mode Quad D-Mos FET Analog Switch A rrays O rd ering Inform ation D e s c rip tio n 20V, 500 1 0 V , sou 1 5 V , SOU

irf9321

Abstract: IRF9321PBF IRF9321TRPBF
Contextual Info: PD - 95960 IRF9321PbF HEXFET Power MOSFET VDS -30 RDS on max V 7.2 mΩ 11.2 mΩ Qg (typical) 34 nC ID -15 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) 6   ' 6   ' 6   ' *   ' SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application

IRHNJ63234

Abstract: IRHNJ67234 PD-97197
Contextual Info: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides

IRHYS63234CM

Abstract: IRHYS67234CM
Contextual Info: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides

BSR802N

Abstract: GPS09473 HLG09474 L6327
Contextual Info: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23

BSR202N

Abstract: GPS09473 HLG09474 L6327 DIODE D38 -06 DIODE D38 06
Contextual Info: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23

AN-994

Abstract: IRL2703 IRL2703S
Contextual Info: PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.04Ω G ID = 24A S Description

Contextual Info: S T U/D1255P L S amHop Microelectronics C orp. J an.03 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 110 @ V G S = -10V

AN-994

Abstract: IRL2703 IRL2703S
Contextual Info: PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.04Ω G ID = 24A S Description

bc 230

Abstract: SSC02SYAN
Contextual Info: Sullins Headers .100”[2.54mm] Contact Centers, Male Breakaway Header Dip Solder/Right Angle/SMT SPECIFICATIONS • • • • JUMPERS .100 [2.54] 3 amp current rating per contact UL Flammability Rating: 94V-O Insulator: Polyester, PA9T Contact Material: Copper Alloy

TEA-1035

Abstract: 2SK1292 Low Forward Voltage Diode MEI-1202
Contextual Info: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1292 is N-channel MOS Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters solenoid, motor and lamp driver.

iso 1207

Abstract: 2SK1292 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET

IRF6611

Abstract: IRF6611TR1
Contextual Info: PD - 96978E IRF6611 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Dual Sided Cooling Compatible 

IRF6678

Abstract: IRF6678TR1
Contextual Info: PD - 96979B IRF6678 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2

P3596

Abstract: s35d
Contextual Info: Temic Siliconix P-Channel Enhancement-Mode MOSFET SÌ9435DY Product Summary V d s V -3 0 rDS(on) (£2) 0.055 @ V GS = -1 0 V 0.07 @ VGS = - 6 V 0.105 @ VGS = -4 .5 V I d (A) ±5.1 ±4.6 ±3.6 S O -8 ~~6~~1 D rr LITTLE FOOT ZD D r t : g U T~1 D r [XI s [T