GS 05 24 GD 2 Search Results

gs 05 24 gd 2

Contextual Info: Tem ic SÌ9933DY Siliconix Dual P-Channel Enhancement-Mode MOSFET Product Summary VD S V -2 0 r DS(on) (£2) I d (A) 0 .1 1 @ V G S = - 4 .5 V ± 3 .4 0.15 @ V GS = - 3 . 0 V ± 2 .9 0.19 @ V GS = - 2 .7 V ± 2 .6 S2 o SO-8 [T jG [T ~T~1 D j s2 [jT 6 1 D2

Contextual Info: PD - 96975 IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance

GY 123

Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Contextual Info: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122

EIA-541

Abstract: IRF7501 diode code yw
Contextual Info: PD - 95345 IRF7501PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6

Contextual Info: T e m ic SMD15N06 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) 60 0.10 lDa (A) 15 D Q DPAK (T O -252) D •<-¿3 n°n G S Ô s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

SUB60N06-08

Contextual Info: T e m ic SUB60N06-08 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (ß ) I d (A) 0.008 603 60 D p TO-263 ( 1 o jj u y DRAIN connected to TAB G D S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

Contextual Info: UN I V E R S A L S E M I C O N D U C T O R 4TE D • T3t.a3Ml 0 G D Q 1Q 7 22fi ■ UNIVERSAL UNV SD5000, SD5001, SD 5002 N-Channel Enhancement Mode Quad D-Mos FET Analog Switch A rrays O rd ering Inform ation D e s c rip tio n 20V, 500 1 0 V , sou 1 5 V , SOU

IRHNJ63234

Abstract: IRHNJ67234 PD-97197
Contextual Info: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides

AN-994

Abstract: IRL2703 IRL2703S
Contextual Info: PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.04Ω G ID = 24A S Description

Contextual Info: S T U/D1255P L S amHop Microelectronics C orp. J an.03 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 110 @ V G S = -10V

bc 230

Abstract: SSC02SYAN
Contextual Info: Sullins Headers .100”[2.54mm] Contact Centers, Male Breakaway Header Dip Solder/Right Angle/SMT SPECIFICATIONS • • • • JUMPERS .100 [2.54] 3 amp current rating per contact UL Flammability Rating: 94V-O Insulator: Polyester, PA9T Contact Material: Copper Alloy

TEA-1035

Abstract: 2SK1292 Low Forward Voltage Diode MEI-1202
Contextual Info: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1292 is N-channel MOS Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters solenoid, motor and lamp driver.

iso 1207

Abstract: 2SK1292 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET

Contextual Info: PD - 96979A IRF6678 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2

Contextual Info: PD - 96979E IRF6678 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bormide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Dual Sided Cooling Compatible 

Contextual Info: PD - 96978D IRF6611 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Dual Sided Cooling Compatible 

2N760

Abstract: 2n7608 4.5V to 100v input regulator
Contextual Info: PD-97062B 2N7608T2 IRHLF77110 100V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHLF77110 100K Rads (Si) 0.32Ω IRHLF73110 300K Rads (Si) 0.32Ω ID 6.0A 6.0A T0-39

15P05

Abstract: SMD15N MD15N D15N05 smu15n05 U2550
Contextual Info: CT* S ilico n i x Jm Jm in c o r p o r a te d SMD15N05, SMU15N05 N-Channel Enhancement Mode Transistors T H R O U G H HOLE D -PAK T O -2 5 1 D -PA K (T O -2 5 2 ) PRODUCT SUMMARY P A RT NUMBER V (BR)DSS (V ) r DS(ON) (n> •d (A )1 S M D 15N 0 5 50 0.1 0

IRF 042

Abstract: irf 540 mosfet IRL3803 IRLI3803
Contextual Info: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

to 206af

Abstract: to-206af sd210 206af SD214 rings To206AF
Contextual Info: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical

IRFIZ34N

Abstract: IRFZ34N MOSFET 150 N IRF
Contextual Info: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: MG9028E Dual N - Channel 20V D - S MOSFET Features General Description This miniature surface mount MOSFET uses advanced V DS (V)=20V Trench process , low R DS(ON) assures minimal power I D (A)=7A loss and energy conversion, which makes this device ideal for use as battery switch , facilitated by its

1530A

Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A

1530A

Abstract: IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A