GPS SR 87 Search Results

GPS SR 87

Contextual Info: GPS Engine Board Manual SR-87 SiRF StarⅢ V 1.0.1 ProGin Technology Inc. 12F-1, No. 5, Lane 7, De-an St., Lingya District, Kaohsiung 802, Taiwan Tel:+886-7-7278885 Fax:+886-7-7214117 E-mail: info@progin.com.tw http://www.progin.com.tw SR-87 GPS Engine Board Manual

C4532X5R1H475MT

Abstract: 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15
Contextual Info: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier

Contextual Info: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier

Contextual Info: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier

Contextual Info: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

Contextual Info: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Contextual Info: SONY CXD2930BR GPS LSI with Built-in 32-bit RISC CPU Description The CXD2930BR is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, RAM, UART, timer, etc. This LSI, used together with an external ROM and

Contextual Info: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 0, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage

capacitor 2220

Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1

Contextual Info: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

ATC100B331

Abstract: MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22 MWE6IC9100GNR1 MWE6IC9100N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 2, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1 515D107M050BB6A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with

Nippon capacitors

Abstract: Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with

MWE6IC9100N

Contextual Info: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base

J1220

Abstract: 100WpEp MWE6IC9100N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 5, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage

t490d106k035at

Abstract: j3068
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

j3068

Abstract: 1990 1142
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 0, 12/2005 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

rtcm SC-104 specification version 2.1 message type 3

Abstract: GXB1000 SS-258 NMEA GPS 16 channel GPS receiver module 1318LF DGPS 212 rtcm SC-104 specification version 2.1 message type 2
Contextual Info: GXB1000 16-Channel GPS Receiver Module Description The GXB1000 is a 16-channel GPS receiver module. The GXB1000 is a small and light device, and it includes all the functions required for GPS except for the antenna. The GXB1000 can support the various kinds of the portable applications as well as the car navigation system.

Contextual Info: 5ü GEC PLESSEY S E M I C O N D U C T O R S DS3224 2 3 SL6444 1GHz AMPLIFIER / MIXER The SL6444 Amplifier and Mixer is designed for use in Cordless Telephones, Cellular Radios, Pagers and Low Power receivers operating at frequencies up to 1GHz. It contains a

stanag 3350

Abstract: remote control helicopter circuit diagram stanag-3350 MIL-C-39029/58 MIL-C-39029/56 SAE-AS85049 MIL-C-39029 stanag 4156 MIL-STD-1760D assembly for MIL-C-39029/90
Contextual Info: METRIC MIL-STD-1760D 1 August 2003 _ SUPERSEDING MIL-STD-1760C 20 March 1997 DEPARTMENT OF DEFENSE INTERFACE STANDARD FOR AIRCRAFT/STORE ELECTRICAL INTERCONNECTION SYSTEM AMSC: N/A AREA: SESS DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

YAGEO CAPACITOR sek 105

Abstract: srf 2838 JIS B 0405 20KVDC sk 8060 JIS B 0403 YAGEO CAPACITOR sek YC358 srf 2838 datasheet SMD resistors 1808
Contextual Info: www.yageo.com YAGEO Passive Components 2009 Contents Multilayer Ceramic Chip Capacitors 04 SMD Ceramic EMI Filter Capacitors - X2Y 05 Chip Resistors Arrays Network 06 06-07 07 Application Specific Resistors 07-08 Chip Resistors RF Attenuator 08 High Frequency Antenna