MRF5S9080N Search Results
MRF5S9080N Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MRF5S9080NBR1 | 
 | 
HV5 900MHZ 80W TO272WB4N | Original | 754.18KB | 20 | ||
| MRF5S9080NBR1,528 | 
 
 | 
RF POWER FIELD-EFFECT TRANSISTOR | Original | 832.13KB | |||
| MRF5S9080NR1 | 
 | 
RF Power Field Effect Transistors | Original | 754.47KB | 20 | 
MRF5S9080N Price and Stock
NXP Semiconductors MRF5S9080NR1RF MOSFET LDMOS 26V TO270-4 | 
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
MRF5S9080NR1 | Reel | 
  | 
Buy Now | |||||||
NXP Semiconductors MRF5S9080NBR1RF MOSFET LDMOS 26V TO272-4 | 
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
MRF5S9080NBR1 | Reel | 
  | 
Buy Now | |||||||
 
 | 
MRF5S9080NBR1 | 1,000 | 25 | 
  | 
Buy Now | ||||||
 
 | 
MRF5S9080NBR1 | 1,000 | 1 | 
  | 
Buy Now | ||||||
MRF5S9080N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| 
 Contextual Info: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier  | 
 Original  | 
MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N | |
C4532X5R1H475MT
Abstract: 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15 
  | 
 Original  | 
MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 C4532X5R1H475MT 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15 | |
| 
 Contextual Info: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier  | 
 Original  | 
MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 | |
stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 
  | 
 Original  | 
SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 | |
MMZ20363B
Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide 
  | 
 Original  | 
||
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL 
  | 
 Original  | 
||
MRF8P9040N
Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1 
  | 
 Original  | 
||
MC9S12XDP384
Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb 
  | 
 Original  | 
SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb | |
MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications 
  | 
 Original  | 
SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications |