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GP2441 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Gan transistor Contextual Info: polyfet rf devices GP2441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation	Original	gp2441 gan transistor	PDF
GP2441 Contextual Info: polyfet rf devices GP2441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation	Original	gp2441 1-3000mhz	PDF
TB232 Contextual Info: July 9, 2014 TB232 Rev.C Frequency=1100-2600MHz Pout=30W Gain=12dB Vds=48Vdc Idq=150mA Efficiency=40-45% GP2441 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 9, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012	Original	tb232 1100-2600mhz 48vdc 150ma +2gp2441 avenida110	PDF
MGCF21 Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount	Original	l8821p lb421 lp721 sm341 +8lq821 sq701 sr401 mgcf21 ly942 mosfet 50 amp 1000 volt gx4002 5 watt hf mosfet	PDF