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    STMicroelectronics

    STMicroelectronics STGP10NC60S

    Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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    Vyrian STGP10NC60S 12,832
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    GP10NC60S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    E600

    Abstract: STGD10NC60S STGP10NC60S TJ150
    Contextual Info: STGD10NC60S GP10NC60S 10 A, 600 V fast IGBT Features • ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB Low on-voltage drop VCE(sat TAB Application ■ 3 Motor drive DPAK Description This IGBT utilizes the advanced PowerMESH


    Original     		stgd10nc60sstgp10nc60so-220stgd10nc60st4+5gd10nc60sgp10nc60sstgd10nc6ye600tj150 PDF

    stgp10nc60s

    Abstract: gp10nc60 STGD10NC60S GP10NC60S 15931
    Contextual Info: STGD10NC60S GP10NC60S 10 A - 600 V fast IGBT Features • Very low on-voltage drop VCE(sat ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies 3 3 1 1 Application ■ DPAK Medium frequency motor control


    Original     		stgd10nc60sstgp10nc60so-220stgd10nc60st4+4gd10nc60sgp10nc60sgp10nc6015931 PDF

    Contextual Info: STGD10NC60S GP10NC60S 10 A, 600 V fast IGBT Features • ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB s ct Low on-voltage drop (VCE(sat) TAB Application ■ du 3 1 Motor drive DPAK Description This IGBT utilizes the advanced PowerMESH


    Original     		stgd10nc60sstgp10nc60so-220stgd10nc60st4+2gd10nc60sgp10nc60s PDF