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    STMicroelectronics

    STMicroelectronics STGP100N30

    Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-220AB
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    Vyrian STGP100N30 9,771
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    GP100N30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STGW100N30

    Abstract: A3303 c040 STGF100N30
    Contextual Info: STGF100N30 GP100N30, STGW100N30 90 A - 330 V - fast IGBT Features • Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET technology ■ Peak collector current IRP = 330 A @ TC = 25 °C see Table 2 ■


    Original     		stgf100n30stgp100n30stgw100n30o-220fp+4o-247o-220a3303c040 PDF

    STGW100N30

    Abstract: stgp100n30 GP100N30
    Contextual Info: STGF100N30 GP100N30, STGW100N30 90 A - 330 V - fast IGBT Features • Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET technology ■ Peak collector current IRP = 330 A @ TC = 25 °C see Table 2 3


    Original     		stgf100n30stgp100n30stgw100n30o-220fp+3o-247o-220gp100n30 PDF