GP 113 Search Results

mask rom

Contextual Info: 7542 Group Standard Characteristics General Purpose M37542M2/M4-XXXFP/SP/GP/HP, M37542F8FP/SP/GP/HP, M37542F4FP/SP/GP Standard Characteristics Example Standard characteristics described below are just examples of the 7542 Group's characteristics and are not guaranteed.

E62806

Abstract: KT19 KT21 1 Gp 36 kt26 kulka 600 terminal block
Contextual Info: Double Row Terminal Blocks 100 Series Kulka 670A GP Series 150 Volts AC/DC Class C 106 / 670A GP 06 Specifications: Base, General Purpose Phenolic, 150oC Closed Back Design Screws, #6-32 Binder Head, Phil-Slot, Steel Terminals, Plated Brass 1-36 Poles

70616G

Abstract: dsPIC33e family Reference Manual VDR Mu 503 DS70618 DS70571 DS70356 DS70609 DS70600 DSPIC33EP512MU810 DS70616
Contextual Info: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-Bit Microcontrollers and Digital Signal Controllers with High-Speed PWM, USB and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture • 3.0V to 3.6V, -40ºC to +125ºC, DC to 60 MIPS

Contextual Info: 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8182TB NOISE FIGURE, POWER GAIN vs. FREQUENCY • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V 24 • CIRCUIT CURRENT: ICC = 30 mA TYP at VCC = 3.0 V GP • POWER GAIN: GP = 21.5 dB TYP at f = 0.9 GHz

MC101

Contextual Info: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40°C to +125°C, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

DS70207

Abstract: DS70203 MPLAB PM3 circuit induction MOTOR SPEED CONtrol pwm pic DSPIC33FJ16MC101 DS70655 DS70202 DS70194 example dsPIC33fj16 DS70644
Contextual Info: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-bit Digital Signal Controllers (up to 32 KB Flash and 2 KB SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

example dsPIC33fj16

Abstract: DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD
Contextual Info: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

RD06HVF1

Abstract: 100OHM RD06HVF1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING 1.3+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

RD06HHF1-101

Abstract: mosfet HF amplifier RD06HHF1 RD 15 hf mitsubishi 10Turns RD06HHF
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

MAR 618 transistor

Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

MAR 618 transistor

Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

RD06HHF1

Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

RD06HVF1

Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

Common PCN Handset Specification Phase 2 v4.2

Abstract: sim 300s gsm modem datasheet Common PCN Handset Specification v4.2 sim 300 GSM MODEM AT commands GSM0408 NITZ Siemens MC75 str 630 GSM 07.07 siemens 230 96
Contextual Info: Wireless EDGE Modems MultiModem EDGE with Bluetooth Interface MTCBA-E-B MultiModem EDGE with Ethernet Interface (MTCBA-E-EN) MultiModem EDGE with GPS Functionality (MTCBA-E-GP) MultiModem EDGE (MTCBA-E) MultiModem EDGE with USB (MTCBA-E-U)

MRF245

Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780
Contextual Info: 450 .512 MHz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF P ou t Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE

GPS TRACKER

Abstract: ntp 3000 7 segment display with alarm 8 Ports GPRS Modem Pool wireless modem "Message Displays" socket s1 MT2456SMI MT2456SMI-IP DDNS
Contextual Info: Multi-Tech IP Connectivity Embedded SocketModem IP MT2456SMI-IP MultiConnect SS w/IP (MTS2SA-T, MTS2SA-T-R) External Wireless MultiModem CDMA w/IP (MTCBA-C-IP-xx) MultiModem CDMA, EDGE, GPRS with GPS Functionality (MTCBA-x-GP) Command Line Interface

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 1 2011 LOC REVISIONS DIST GP ALL RIGHTS RESERVED. - 2011 2 3 00 P LTR B C H -0.51 DESCRIPTION DATE DWN APVD REDRAWN PER ECO-12-008266 27AUG2012 CJV CWR REVISED PER ECO-13-007439 09JUL2013

600RJ

Abstract: KT 816 E62806 GP011
Contextual Info: Double Row Terminal Blocks 100 Series Kulka 670A GP Series 150 Volts Specifications: • • • • • • • • • • • • MSP Catalog # Base, General Purpose Phenolic, 150° C Closed Back Design Screws, #6-32 Binder Head, Phil-Slot Terminals, Plated Brass

BFY70

Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax

SD1089

Abstract: 470 03 O SD1098 CE125
Contextual Info: 450 .5 1 2 M Hz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF Pout Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE

Contextual Info: AUGAT/ INTCON PRDT GP S7E D • lO^BS AUIP DD0Bfl34 1T4 PCB Headers 110 Series g~ y Features ■ Available in 10, 20, 26, 3 4 ,4 0 ,5 0 , and 60 pin positions, withprintedcircuitor wire-wrapping, straight or right angle termination ■ Headers can be mounted directly to chassis

UPC3215TB-E3-A

Abstract: nec 2401 UPC3215TB
Contextual Info: 5V, SUPER MINIMOLD UPC3215TB SI MMIC WIDEBAND AMPLIFIER FEATURES INSERTION POWER GAIN vs. FREQUENCY • WIDEBAND RESPONSE: fu = 2.9 GHz TYP at 3dB bandwidth 25 • NOISE FIGURE: NF = 2.3 dB TYP at f = 1.5 GHz Gain, GS dB 20 • POWER GAIN: GP = 20.5 dB TYP at f = 1.5 GHz

K 872

Contextual Info: 5V, SUPER MINIMOLD UPC3215TB SI MMIC WIDEBAND AMPLIFIER INSERTION POWER GAIN vs. FREQUENCY FEATURES • WIDEBAND RESPONSE: fu = 2.9 GHz TYP at 3dB bandwidth 25 20 Gain, GS dB • NOISE FIGURE: NF = 2.3 dB TYP at f = 1.5 GHz • POWER GAIN: GP = 20.5 dB TYP at f = 1.5 GHz

UL20

Abstract: UL20379 Hannstar 7
Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST GP 00 ALL RIGHTS RESERVED. R E V IS IO N S LTR TOOLING DRAWING NO. DESCRIPTION B REVISED PER E C 0 - 0 5 - 0 0 6 1 88 DATE DWN APVD 03AUG05 TW JH TR00001