GP 005 DIODE Search Results

Contextual Info: jtà i W a n A M P <c o m p a n y Wireless Power Module, 10W 1.5-1.6 GHz PHA1516-10 V4.00 Features • Designed for Cellular Base Station Applications • Input and Output M atched to 5 0 0 • Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP jr . • Thermally Tracking Bias Diode Included

LR14385

Abstract: RT78625 siemens relay 24vdc RTE24024F RT16016 RPMT00A0 8A DPDT RELAY 220 latching RELAY DPDT 12V 12v 16A diagram RY16041
Contextual Info: RT series Miniature Printed Circuit Board Relays, Sockets and Accessories RT series DC Coil 16 Amp PC Board Miniature Relay Meets VDE 10mm Spacing, 5KV Dielectric File E22575 File LR15734 NR 6106 Features Coil Data @ 25°C • SPST through DPDT contact arrangements.

sm1206

Abstract: ECU-V1H330JCM HLMP-3000 ERJ diode SD-005-APP-PCB BLM31B601S ECJ-3VB1E104K ECJ-3YB1C105K diode vert
Contextual Info: A_ B_ C D BOTTOM-MOUNTED COMPONENTS: QTY. REF.DES. Semiconductor Inte rfac e P roducts B o tto m S ilk S creen B o tto m A sse m b ly :• ■ T sl-T■ ■r !II i g 3 4 MFR. DESCRIPTION _2_ C1.C2 ECS-T1VC475R Pana. 4.7uF/35V SM Tant.

transistor 33w

Abstract: 33w NPN
Contextual Info: m an A M P com pany Wireless Bipolar Power Transistor, 33W 1930-1990 MHz Features PH1920-33 .744 18,90 -.560(14.22)- - • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n Km itter C lass AB O peratio n Intern al Inpu t and O utput Im p ed an ce M atching

RN60C

Abstract: LT1124 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 190C
Contextual Info: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/

LT1124

Abstract: LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 strain gauge amplifier 102 RN60C L3540
Contextual Info: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps FEATURES DESCRIPTION n The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/ OP-470 op amps. In addition, the LT1124/LT1125 have

Contextual Info: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps Description Features 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max n Slew Rate: 4.5V/µs Typ n Gain-Bandwidth Product: 12.5MHz Typ n Offset Voltage, Prime Grade: 70µV Max Low Grade: 100µV Max

Contextual Info: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES n n n n n n n n n 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max Slew Rate: 4.5V/ s Typ Gain-Bandwidth Product: 12.5MHz Typ Offset Voltage, Prime Grade: 70μV Max

OP270

Abstract: LT1124 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 RN60C 1fa MARKING
Contextual Info: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES n n n n n n n n n 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max Slew Rate: 4.5V/ s Typ Gain-Bandwidth Product: 12.5MHz Typ Offset Voltage, Prime Grade: 70μV Max

RN60C

Contextual Info: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max n Slew Rate: 4.5V/µs Typ n Gain-Bandwidth Product: 12.5MHz Typ n Offset Voltage, Prime Grade: 70µV Max Low Grade: 100µV Max

transistor c 933

Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Contextual Info: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System

transistor j5

Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
Contextual Info: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System

b 595 transistor schematic

Abstract: PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W
Contextual Info: Wireless Power Transistor 15 Watts, 850-960 MHz PH0810-15 PH0810-15 Wireless Power Transistor 15 Watts, 850 - 960 MHz 1 Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP Common Emitter Configuration

PH1516-100

Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

PH0810-15

Contextual Info: m an A M P com pany Wireless Bipolar Power Transistor, 15W 850 - 960 MHz PH0810-15 V2.00 .975 <2 4 .77 " Features • • • • • .725 <18.42)"" D esigned for l.i n e a r A m plifier A pplications Class AB: -30dBc Typ 3rd 1MD at 15 W atts PHP C o m m o n K m itter C onfiguration

JN U10

Contextual Info: jtà i W a n A M P <c o m p a n y Wireless Power Module, 2W 1.5-1.6 GHz P H A 1 5 1 6 -2 V4.00 Features • • • • • 3SC 13Ï • -?:ia _ D esigned for Cellular Base Station Applications Input and Output Matched to 500 Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP

85031B

Contextual Info: E5061B-3L5 LF-RF Network Analyzer with Option 005 Impedance Analysis Function Data Sheet E5061B-3L5 with Option 005; NA plus ZA in one box To ensure the performance and reliability of electronic equipment, it is crucial to evaluate impedance characteristics of various electronic

Contextual Info: jtà i W a n A M P <c o m p a n y Wireless Power Module, 30W 1 .6 -1 .7 GHz PHA1617-30 V4.00 Features • • • • • 13 10 GJ.OE; D esigned for Cellular Base Station Applications Input and Output Matched to 50ß Class AB: -30 dBc Typ 3rd IMD at 30 Watts PEP

T35 diode

Abstract: power diode T35-4 diode T35 -4-D6 T35-4 diode
Contextual Info: Afifacm w an A M P com pany Wireless Bipolar Power Transistor, 35W 850 - 960 MHz PH0810-35 V2.00 Features • • • • • • .975 2 4 .7 7 .725 _ (18,42) D esigned for L inear A m plifier A pplications Class AB: -30dBc Typ 3rd IMD at 15 W atts PEP

Contextual Info: BFP720F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP720 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-19 RF & Protection Devices Edition 2012-10-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

CS5170

Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Contextual Info: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC GP ALL RIGHTS RESERVED. REVISIONS D IST 00 LTR D ESCRIPTION EC 0S11 - 0 1 5 1 - 0 4 LED P O S IT IO N A 2 LED P O S IT IO N 3\ 1 2. OF ASSEMBLY 7.87

CS5170

Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Contextual Info: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .