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GI1060 Abstract: GIJ1060 Contextual Info: ISSUED DATE :2005/09/05 REVISED DATE : GI1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,	Original	GI1060 GIJ1060 O-251 GI1060	PDF

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GI1060

Abstract: GIJ1060
Contextual Info: ISSUED DATE :2005/09/05 REVISED DATE : GI1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,

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GI1060 GIJ1060 O-251 GI1060

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