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    Infineon Technologies AG

    Infineon Technologies AG SGI02N120XKSA1

    Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-262AA
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    Vyrian SGI02N120XKSA1 7,017
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    GP02N120

    Abstract: 02N120 GI02N120 15v 60w smps SGI02N120 SGP02N120 fast recovery diode 1a 1200v SMD smps 10w 12V PG-TO-220-3-1 SGD02N120
    Contextual Info: SGP02N120 GI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		sgp02n120sgi02n120sgd02n120pg-to-262-3-1+9pg-to-252-3-11pg-to-220-3-1gp02n120pg-to-22002n120gi02n12015v 60w smpsfast recovery diode 1a 1200v smdsmps 10w 12v PDF