GHR 1 Search Results

102ghr102k

Abstract: 332GHR102K 562GHR102K
Contextual Info: GHR +85°C Class II Ceramic Disc Capacitors FEATURES • Small Size ■ 1000 WVDC ■ General Purpose SPECIFICATIONS ±10% K Capacitance Tolerance Operating Temperature Range -10°C to +85°C (Y5P) Operating Voltage 1000 WVDC Insulation Resistance at 500VDC

102ghr102k

Abstract: 562GHR102K 101GHR102K 271GHR102K 331GHR102K 561GH
Contextual Info: GHR +85°C Class II Ceramic Disc Capacitors FEATURES • Small Size ■ 1000 WVDC ■ General Purpose SPECIFICATIONS Capacitance Tolerance ±10% K Operating Temperature Range -10°C to +85°C (Y5P) Operating Voltage 1000 WVDC Dissipation Factor 1kHz, +20°C

M57719

Abstract: M57719N m577 rf power transistor h2
Contextual Info: MITSUBISHI RF POWER MODULE M57719N 142-163MHz, 12.5V, 14W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM GHr > II— PIN : P in : RF INPUT @VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY 0PO : RF OUTPUT G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25C

uba2036

Abstract: lighting UBA2036TS High Voltage Driver IC for HID Lamps Application of electronics circuits to lighting SOT134 hid lamp controller MO-150 Q100 SSOP28
Contextual Info: UBA2036TS Full bridge control IC for HID automotive lighting Rev. 01 — 30 October 2008 Product data sheet 1. General description The UBA2036 is a high voltage monolithic Integrated Circuit IC manufactured in a High Voltage Silicon On Insulator (HVSOI) process. This circuit is designed for driving

uba2037

Abstract: lighting High Voltage Driver IC for HID Lamps UBA2037TS hid lamp controller hid lighting UBA2037T 075E05 MO-150 MS-013
Contextual Info: UBA2037 Full bridge control IC for HID general lighting Rev. 01 — 30 October 2008 Product data sheet 1. General description The UBA2037 is a high voltage monolithic Integrated Circuit IC manufactured in a High Voltage Silicon On Insulator (HVSOI) process. This circuit is designed for driving

2501 BRIDGE SMD

Abstract: High Voltage Driver IC for HID Lamps Electronic ignitors for HID lamp circuits Thermal Shut Down Functioned MOSFET wien bridge SO24 UBA2030T Wien Bridge Oscillator with RC bridge hid lamp ignitor application notes
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UBA2030T Full bridge driver IC Preliminary specification Supersedes data of 1997 Sep 16 File under Integrated Circuits, IC11 1999 Aug 10 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T FEATURES

Contextual Info: Marktech RT Angle Dual Stack PCB MT 3mm LEDs Features Diffused lens Stackable end to end Series Line−Up Part Number Color Material MTA1163−GHR Yellow Green GaP MTA1163−GHR High Efficiency Red GaAsP MTA1163−HRG High Efficiency Red GaAsP MTA1163−HRG

Contextual Info: Marktech RT Angle Dual Stack PCB MT 3mm LEDs Features Diffused lens Stackable end to end Series Line−Up Part Number Color Material MTA1163−GHR Yellow Green GaP MTA1163−GHR High Efficiency Red GaAsP MTA1163−HRG High Efficiency Red GaAsP MTA1163−HRG

Contextual Info: !! $ " # $ % " " ! # # & "' * +' ,-. * 2 3 / 4 $ %/ 4 % % :5" 5 $ 3 3 < = 3 <$ < 4 5 % $ 5 3 %B $ "'(DEF %B 2>? -@ * GH % % "'(DEF 3 3 3 3 %+ %5 I 2 3 <$ I $ 3# 5 3 6 7 2>? -@ = 7 " / & +'01 * 2 / % 8 $3 9 6 % % % :;5 5 3 H H J I 8 H ; % % 2>? -@ 2 H ; $

DEF33

Contextual Info: ! # " # $ % ! " " & "' * +' ,-. * 2 3 / 4 $ $/ 4 $ $ :5" 5 $ 3 3 < = 3 <$ < 4 5 $ $ 5 3 $B $ "'(DEF $B 2>? -@ * GH $ $ "'(DEF 3 3 3 3 $+ $5 I 2 3 <$ I $ 3# 5 3 6 7 2>? -@ = 7 " / & +'01 * 2 / $ 8 $3 9 6 % $ $ :;5 5 3 H H J I 8 H ; % % 2>? -@ 2 H ; $ 3 H

gde 103

Abstract: gde marking 307 GDE TRANSZORB gem gfx 77 marking GHS ggk 75 GHR TVS GGR 55 GFR 310
Contextual Info: SMCJ5.0A thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo 0.185 MAX. (4.69 MAX.)

GHR TVS

Abstract: gde 103 marking ghm gfx 77 marking GHS bFK 96 smcj5.0a GDE GENERAL SEMICONDUCTOR MARKING bfm GGV 85 A
Contextual Info: SMCJ5.0A thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo 0.185 MAX. (4.69 MAX.)

SO24

Abstract: SSOP28 UBA2032 UBA2032T UBA2032TS High Voltage Driver IC for HID Lamps circuit diagram ignitor transistor Bd 575
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UBA2032 Full bridge driver IC Product specification Supersedes data of 2003 Oct 24 2005 Mar 24 Philips Semiconductors Product specification Full bridge driver IC UBA2032 FEATURES GENERAL DESCRIPTION • Full bridge driver circuit

High Voltage Driver IC for HID Lamps

Abstract: Electronic ignitors for HID lamp circuits UBA2033 MO-150 SSOP28 UBA2033TS application notes uba2033ts
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UBA2033 HF full bridge driver IC Product specification 2002 Oct 08 NXP Semiconductors Product specification HF full bridge driver IC UBA2033 FEATURES GENERAL DESCRIPTION • Full bridge driver circuit The UBA2033 is a high voltage monolithic integrated

Contextual Info: DISTRIBUTION: LENGTH T A B LE " Y" N O.CIRCUITS 03 0.800 1 .26 04 1 .200 1 .66 05 1 .600 2.06 06 2.000 2.46 07 2.400 2.86 08 2.800 3.26 09 3.200 3.66 10 3.600 4.06 11 4.000 4.46 12 4.400 4.86 13 4.800 5.26 14 5.200 5.66 n NOTES: -PART UL IS DESIGNED 1059 C LA SS

transistor j6

Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Contextual Info: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

Rogers 6010.5

Abstract: PH1214-20EL PH1214-25M 6010.5 transistor j39
Contextual Info: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

PH2729430M

Contextual Info: = .- =_ ‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry

SMCJ7.5 CA

Abstract: gde 103
Contextual Info: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo Mounting Pad Layout 0.185 MAX.

transzorb marking code GEM

Abstract: general semiconductor marking code GFX ghg 712 marking code GDD gde 103 ghg 122 307 GDE
Contextual Info: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20)

gfu 65

Contextual Info: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20)

gfx 77

Abstract: marking code BEV Bex c 209 marking code BFK 94 marking code bdu
Contextual Info: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band ed e d n Exte e Rang g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90)

GENERAL SEMICONDUCTOR MARKING bfm

Abstract: transzorb marking code GEM GFM 57, TVS bel 188 transistor marking ghm SMCG10 SMCJ10C SMCJ10CA marking BFP marking code GGt
Contextual Info: SMCG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors d e d n nge e t x E e Ra g a t l Vo DO-215AB SMCG Cathode Band 0.050 (1.27) Dimensions in inches and (millimeters) 0.280 (7.11)

PH2729-65M

Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation