GH 17 Search Results

marking 84

Abstract: GH86 gh82 GH MARKING 103M
Contextual Info: Types GH 82, GH 84, GH 86 Series GH Metalglazefilm-Resistors High-voltage-version, axial, coated Technical specifications Types Styles Dimensions Rated power P70 Resistance range applic. E-series Tolerances Temperature coefficient Voltage coefficient Max. cont. work, voltage

GDQV

Contextual Info: *1 5e*8/$7(85 '( 7(03e5$785( 180e5,48( 5pJXODWHXU GH WHPSpUDWXUH DX IRUPDW  [  DYHF IRQFWLRQQDOLWp GH FRPPXQLFDWLRQ 'RXEOH DIILFKDJH H[WUrPHPHQW OXPLQHX[ 'LYHUVHV HQWUpHV GH WHPSpUDWXUH  WKHUPRFRXSOH VRQGH j UpVLVWDQFH SODWLQH FDSWHXU GH WHPSpUDWXUH

Contextual Info: &1 5e*8/$7(85 '( 7(03e5$785( 180e5,48( 5pJXODWHXU GH WHPSpUDWXUH FRPSDFW DYHF IRQFWLRQQDOLWp GH FRPPXQLFDWLRQ 'RXEOH DIILFKDJH H[WUrPHPHQW OXPLQHX[ 'LYHUVHV HQWUpHV GH WHPSpUDWXUH  WKHUPRFRXSOH VRQGH j UpVLVWDQFH SODWLQH FDSWHXU GH WHPSpUDWXUH VDQV FRQWDFW HW HQWUpHV DQDORJLTXHV

510-9314

Abstract: Millmax 124-13 510-9320 SWC 107 694-13
Contextual Info: PRECICONTACT to MILL-MAX Cross Reference List PRECICONTACT# AXP 13 085 TL A 72 BXP 16 175 TL A 23 CL XXX TL A 31 CNT XXX GH M 31 CNT XXX GH N 31 CNT XXX GH O 31 CNT XXX GH P 31 CNT XXX TL M 30 CNT XXX TL M 31 CNT XXX TL M 36 CNT XXX TL N 30 CNT XXX TL N 31

hr5 connector

Abstract: HR-1 hr 1198 8AC1
Contextual Info: SHT. 1 MR 1- S D A E - 3 2 ! 5~ * * N * * OF 1 MOD I F I C A T I O N ECN IS S . DATE IN IT RECO RD SHTS. AFFECTED F 2 .12.82 GH ALL REDRAW MEWL-112 G 26.4 .a: GH ALL REVISION MEML-594 H 5 .6 .8: GH ALL VARIOUS MEML-608 J 21.6 .83 GH ALL VARIOUS MEML-681 K

Contextual Info: TABLE OF CONTENTS HI GH VOLTAGE POWER SYSTEMS RACK MOUNT HI GH VOLTAGE POWER SYSTEMS HV Rack Configurable Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 19” rack mounted/ benchtop high-voltage power system

CapXon

Abstract: CapXon GH capxon 735 8X16 d1265 CapXon series
Contextual Info: CapXon GH Series GH Series Features ◆ Low impedance ◆ High temperature, Long life 3,000 to 10,000 hours at 105℃ ◆ For detail specifications, please refer to Engineering Bulletin NO. 170. Specifications Item Performance Characteristics Operating Temperature Range

Contextual Info: C Y 7 C 1041 V 33 ^ CYPRESS 256K x 16 Static RAM w ritten into the location spe cifie d on th e address pins A 0 throu gh A 1 7 . If Byte High Enable (BHE) is LOW, then data from I/O pins (l/O g throu gh l/ 0 -|5 ) is w ritten into the location spe cifie d on the address pins (A 0 throu gh A-|7) .

12T4

Contextual Info: SK 25 GH 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 3 IGBT module SK 25 GH 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

a2198

Abstract: 2SK1388 A2-198
Contextual Info: 2SK1388 FUJI POWER M O S-FET N-C HANNEL SILICON POWER MOS-FET F-III SERIES •Outline Drawings ■ leatures • H gh current • Low on-resistance • N d secondary breakdown • Low driving power • H gh forward Transconductance ■Applications • Motor controllers

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8P664LS48-GH 8M X 64 SDRAM SODIMM based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMS with SPD DESCRIPTION AVED Memory Products AVED8P664LS48-GH is a 8M bit X 64 Synchronous Dynamic RAM high density memory module.

a2198

Abstract: 2SK1388 A2-198 a2200 1r1h A2199
Contextual Info: 2SK1388 FUJI POWER M O S -FE T N-C H ANNEL SILICON POWER MOS-FET F-III SERIES lOutline Drawings •features 1H gh current 1Low on-resistance ' N d secondary breakdown J •Low driving power 1H gh forward Transconductance c b® ■Applications 12 0.8*“

Contextual Info: PD-97440B GH-SERIES HIGH RELIABILITY, HIGH EFFICIENCY RADIATION HARDENED DC-DC CONVERTER 28V Input, Single Output Description The GH series is a family of low voltage single output DC-DC converters. They are specifically designed in response to the need for low voltage at moderate current

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED32P668LS48-GH 32M X 64 SDRAM DIMM based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED32P668LS48-GH is a 32M bit X 64 Synchronous Dynamic RAM high density memory

Contextual Info: 2SK2254-01L. S FUJI POWER M O S-FET IM-CHANNEL SILICON POWER MOS-FET _ _ Ä - F A P - I I A S E R I E S • Features • Hi gh speed switching • Lbiiv on-resistance • Nc secondary breakdown • Low driving power • Hi gh voltage

Contextual Info: DR/4W1NG MA DE T H I S DRAWING IN 4 THIRD ANGLE IS UNPUBLISHED. COPY RI GH T 19 <Z> PROJECTION LOC RELEASED FOR PUBLICATION AMP BY IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. DIST 54 REVISIONS ZONE LTR DESCRIPTION DATE REACT -2 THRU -24 AND

GH-039

Abstract: SANREX igbt driver photo coupler specification
Contextual Info: HYBRID GATE DRIVER IC FOR IGBT GH-039 SanRex GH-039 is Hybrid Gate Driver IC for IGBT. ● High Voltage isolation by Photo Coupler to drive IGBT up to dual 600V, 300A module ● Operate with single power source ● Support to high-density system design ● Built-in Photo Coupler with resistor（330Ω）

220066

Contextual Info: 4 3 DR AW IN G MADE IN THIRD AN GL E PROJ EC TI ON THIS DRAWING IS UNPUBLISHED. £ COPY RI GH T 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. PROD ,19 3 321 ALL INTERNATIONAL R I GH TS RESERVED. CODE LOC DIST DF xo REVISIONS p F ZONE y ASSEMBLED D LTR

Contextual Info: TL RMH,SH,OH,YH,GH,FGH 1052(T20) TOSHIBA LED Lamp Preliminary TL(RMH,SH,OH,YH,GH,FGH)1052(T20) Panel Circuit Indicator Unit: mm • 5.2 (L) x 5.2 (W) × 4.0 (H) mm size • TL□H1052 (T20) Series • InGaAℓP LEDs • High Luminous consumption • Colors :Red, Orange, Yellow, Green

RG188U

Abstract: 220066 EW437
Contextual Info: 4 3 DR AW IN G MADE IN THIRD AN GL E PROJ EC TI ON THIS DRAWING IS UNPUBLISHED. £ COPY RI GH T 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. PROD ,19 3321 ALL INTERNATIONAL R I GH TS RESERVED. CODE LOC DIST DF xo REVISIONS p F ZONE y LTR DE SC RI PT IO N

Diode GFT

Contextual Info: 2SK2257-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F A • Features P - I I A S E R I E S Outline Drawings • H gh speed switching • Low on-resistance • N secondary breakdown • Le w driving power • H gh voltage • V,5 = + 30V Guarantee

Contextual Info: ELECTRICAL D A T A : Characteristic impedance Frequency range VSWR 50 O h m s DC - 12,4 GHz 1 GHz < 1,05 2 GHz < 1,10 4 GH z < 1,20 12,4 GH z < 1,20 1 W Power rating MATERIALS : Body Inner conductor B r a s s , plating O ptargen B r a s s , plating Au E Allqemeintotleranzen

Contextual Info: DR/4ViING MA DE T H I S DRAWING IN 4 THIRD ANGLE IS UNPUBLISHED. COPY RI GH T 19 PROJECTION PROD LOC 5327 DF FO RELEASED FOR PUBLICATIO N BY AMP IN CORPORATED. ALL INTERNATIONAL R I GH TS RESERVED. CODE D J ST REVISIONS ZONE J. LTR DESCRIPTION REV S REDWN PER DF-5332

Contextual Info: 4 DR/4 W1 N G MADE IN T H IR D ANGLE T H I S DRAWI NG IS UNPUBLISHED. COPY RI GH T 19 <Z> PRO JECTIO N LOC RELEASED FOR PUBLICATION AMP BY IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. DIST 54 REVISIONS ZO N E LTR DESCRIPTION DATE REACT -14 THRU -21,-23,-24, AND