GGD14 Search Results
GGD14 Price and Stock
Abracon Corporation AMPMGGD-14.7456T3MEMS Oscillator, 14.7456 MHz, SMD, 1.6mm x 1.2mm, 50 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGGD-14.7456T3) |
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AMPMGGD-14.7456T3 | Tape & Reel | 3,000 |
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AMPMGGD-14.7456T3 |
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AMPMGGD-14.7456T3 | 113 Weeks | 3,000 |
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Abracon Corporation AMPMGGD-14.31818T3MEMS Oscillator, 14.31818 MHz, SMD, 1.6mm x 1.2mm, 50 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGGD-14.31818T3) |
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AMPMGGD-14.31818T3 | Tape & Reel | 3,000 |
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AMPMGGD-14.31818T3 |
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AMPMGGD-14.31818T3 | 113 Weeks | 3,000 |
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Abracon Corporation AMPMGGD-14.7456MEMS Oscillator, 14.7456 MHz, SMD, 1.6mm x 1.2mm, 50 ppm, 3.3 V, AMPM - Bulk (Alt: AMPMGGD-14.7456) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AMPMGGD-14.7456 | Bulk | 1,000 |
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AMPMGGD-14.7456 |
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AMPMGGD-14.7456 | 113 Weeks | 1,000 |
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Abracon Corporation AMPMGGD-14.7456TMEMS Oscillator, 14.7456 MHz, SMD, 1.6mm x 1.2mm, 50 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGGD-14.7456T) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AMPMGGD-14.7456T | Tape & Reel | 1,000 |
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AMPMGGD-14.7456T |
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AMPMGGD-14.7456T | 113 Weeks | 1,000 |
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Abracon Corporation AMPMGGD-14.31818TMEMS Oscillator, 14.31818 MHz, SMD, 1.6mm x 1.2mm, 50 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGGD-14.31818T) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AMPMGGD-14.31818T | Tape & Reel | 1,000 |
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AMPMGGD-14.31818T |
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AMPMGGD-14.31818T | 113 Weeks | 1,000 |
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GGD14 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DENSE-PAC MICROSYSTEMS 4 Megabit CMOS EEPROM DPE512S8N DESCRIPTION: The DPE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate |
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dpe512s8n600-mil-wide32-pin300ns+1 | |
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Contextual Info: SEPTEMBER 1993 DS3820 - 2.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. The unique architecture allows |
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ds3820cla80000cla80k | |
Yamaha DA
Abstract: 82C924 opti 929 82C92
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82c92416-bitci0d1444dd01471+3 | |
82C929
Abstract: opti 82c929 SF921 ns 4248 82C92 OPL2
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82c92932c929mpu-40116-bit+7 | |
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Contextual Info: SME » ^S3TbT0 DÜG145Ô 7ÖT • ÜJAF Programmable Peripheral T PSD302 ■Hi-33 Programmable Microcontroller Peripheral with Memory WAFER SCALE INTEGRATION Preliminary Key Features □ □ Single Chip Programmable Peripheral for M icrocontroller-based Applications |
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psd302hi-33 | |
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Contextual Info: APRIL, 1996 LXT914 Flexible Quad Ethernet Repeater General Description Features T h e L X T 9 1 4 is an integ rated m ulti-port repeater I • F o u r in te g rate d 10B A S E -T tran sce iv e rs a n d one A U I tran sceiv er o n a single chip d esigned fo r m ixed-m edia netw orks. It provides all |
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lxt914 | |
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Contextual Info: •HYUNDAI HY514400 Series SEMICONDUCTOR 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology a s well as advanced circuit techniques to provide wide operating |
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hy514400ai0501ac02-30-apr93hy514400j+1 | |
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Contextual Info: S -n 0 S S Y S T E M S INC SbE ]> • 0 0 0 1 4 2 7 23b B S M O SMC6266 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER f " V « ? -/? - Q a ' ■ DESCRIPTION The SMC6266 is a CMOS 4-bit microcomputer using an SMC6200 as its core processor. Features include ROM/ RAM, 2-channel timer, synchronous and asynchronous serial ports, 40 I/O lines, and an event counter,all |
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smc6266smc620060-pin | |
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Contextual Info: i v d u M X 2 6 C 10 0 0 1 IV W 3 IT [1 2 S K x 8 ] C M Q S M U L T I - T I M E - P R O G R A M M A B U E R O tS /I FEATURES • • • • • • • 128K x 8 organization Single +5V p ow er supply +12.5V program m ing/erasing voltage Electric erase instead of UV light erase |
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Contextual Info: A dvanced P o w er Tec h n o lo g y APT10M25BNFR APT10M30BNFR POWER MOS IVe 0.025a 100V 75A 100V 75A 0.030Í2 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. |
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apt10m25bnfrapt10m30bnfrapt10m25/10m30bnfr+3 | |
XTAL78
Abstract: QDD1443 Z86C95 tda 2022 P2M SCR Z86C9524VSC
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z86c9516-bit256-byteregisterfile84-pin+8 | |
Qualcomm Q4401
Abstract: Q4401 qualcomm 7200 qualcomm qualcomm ww code excited linear predictive BA 658 VOCODER IQG3 Q440I
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q4401tq0333fcidsp1616x1100333b+9 | |
PLESSEY CLA
Abstract: gh160 FG48
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ds4375-1cla90000plessey clagh160+1 | |
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Contextual Info: •HYUNDAI HY524800 Series SEMICONDUCTOR 512KX 8-blt CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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hy524800512kxdd01410561max+2 | |
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