GG31S Search Results

Contextual Info: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit

82C206

Contextual Info: 47E D SIEMENS • flaasbos 0031S7D 1 « S I E G SIEMENS AKTIE NGE SELLSCHAF -rs a -3 S -5 5 SAB 82C211 CPU/Bus Controller of Siemens PC-AT Chipset Advance Information 117 3.90 47E » ■ Ö 535b05 0031571 SIEMENS AKTIENGESELLSCHAF -•

Contextual Info: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly

Contextual Info: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: s í J- FUJITSU SEMICONDUCTOR DATA SHEET iiì^ p il^ g i 'if , m iA S ^ f IL25Í ^ P625/W625/626R/627R/P62' MB89PV620 • DESCRIPTION The MB89620R series has been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers.

SAB82C206

Abstract: 82c206f 82C206
Contextual Info: 47E D • ÖE3SbOS 0031522 1 ■ SIEG SIEMENS AKTI ENGESELLSCHAF SAB 82C206 Integrated Peripheral Controller -r-'5'3r'b'S>-\5 P re lim in a ry • P rogram m able w a it states fo r the D M A cycle and internal register access • 8 MHz DMA clock • 16 Mbytes o f D M A address space

Contextual Info: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7,1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is

Contextual Info: KM29N16000ER Flash ELECTRONICS 2Mx8Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register

transistor fp 1016

Abstract: BFQ34T ON4497 FP 801 UBB361
Contextual Info: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

Contextual Info: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required

Contextual Info: TOSHIBA TC5164 5 165AFT/AFTS-40.-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 ,1 94,304-WORD X 16-BIT EDO {HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)165AFT/AFTS is an EDO (hyper page) dynamic RAM organized as 4,194,304 words by 16