GG14 Search Results
GG14 Price and Stock
Microchip Technology Inc M1A3P1000-1FGG144I- Trays (Alt: M1A3P1000-1FGG144I) |
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M1A3P1000-1FGG144I | Tray | 160 |
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M1A3P1000-1FGG144I | Bulk | 500 |
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Microchip Technology Inc M1AGL600V5-FGG144- Trays (Alt: M1AGL600V5-FGG144) |
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M1AGL600V5-FGG144 | Tray | 26 Weeks | 160 |
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M1AGL600V5-FGG144 | Bulk | 500 |
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M1AGL600V5-FGG144 | Tray | 26 Weeks |
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ITT Interconnect Solutions CIR06CFZGG-14S-5S-F80-T12- Bulk (Alt: CIR06CFZGG-14S-5S-F80-T12) |
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CIR06CFZGG-14S-5S-F80-T12 | Bulk | 21 Weeks | 10 |
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CIR06CFZGG-14S-5S-F80-T12 | Bulk | 10 |
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CIR06CFZGG-14S-5S-F80-T12 | Bulk | 11 Weeks | 10 |
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CIR06CFZGG-14S-5S-F80-T12 |
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Samtec Inc CPAS-196-ZSGG-14AC- Bulk (Alt: CPAS-196-ZSGG-14AC) |
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CPAS-196-ZSGG-14AC | Bulk | 5 Weeks, 6 Days | 1 |
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CPAS-196-ZSGG-14AC | 1 |
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Microchip Technology Inc M1AGL600V5-FGG144IFPGA IGLOO Family 600K Gates 130nm (CMOS) Technology 1.5V 144-Pin F-BGA - Trays (Alt: M1AGL600V5-FGG144I) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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M1AGL600V5-FGG144I | Tray | 26 Weeks | 160 |
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M1AGL600V5-FGG144I | Bulk | 500 |
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M1AGL600V5-FGG144I | Tray | 26 Weeks |
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GG14 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: b lE D • bSM 'lñB'i M IT S U B IS H I GG14540 122 DISC R ETE SC ■ N ITS MITSUBISHI LASER DIODES ML4XX3 SERIES FOR OPTICAL INFORMATION SYSTEMS ML4403, ML4403R, ML4413N, NAME ML4413C type DESCRIPTION FEATURES ML4XX3 is an AIGaAs semiconductor laser Which |
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gg14540ml4403ml4403rml4413n+3 | |
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Contextual Info: SAM S UN G E L E C T R O N I C S INC b4E » • 7^4142 KMM581020AN GG14454 455 ■ SM6K DRAM MODULES 1 M x 8 DRAM SIMM Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: KMM581020AN-7 • • • » • • • tiuc tcAc I rc |
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kmm581020angg14454kmm581020an-7130ns+6 | |
seven transistor drivers
Abstract: 251C M54524P WI54524P LF400
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b24tflpm54524p500ma-ta-25-c+4 | |
IRF1010S
Abstract: AIT smd
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55h52irf1010ssmd-220ait smd | |
C67078-A1101-A2Contextual Info: öö» D • ÔSBSbOS GG14ö7b b ■ SIEG 88D 14876 D 7 BUZ 201 SIEMENS AKTIENGESELLSCHAF-Main ratings N-Channel Draln-source voltage l^ S Continuous drain current h Draln-source on-reslstance R,OS on) Description Case = 400 V « 12,5 A = 0,4 n FREDET with fast-recovery reverse diode, N-channel, enhancement mode |
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c67078-a1101-a2 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam ic RAM high density memory module. The Samsung |
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gg1472dkmm532512w/wgkmm532512w40-pin+5 | |
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Contextual Info: öö» D • ÔSBSbOS 88D GG14ö7b 14876 D b « S IE G ~T~ 3 BUZ 201 SIEMENS AKTIENGESELLSCHAF-Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description C ase yD3 = 400 V /D = 12,5 A R„S(on = 0,4 i i |
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c67078-a1101-a2023sb | |
BUZ41AContextual Info: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) |
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2s473sbuz41ao-220abes473s+2 | |
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Contextual Info: SILICONIX INC lflE D • A5 S4 7 3 5 D014bl3S Q ■ BUZ32 N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW O PRODUCT SUMMARY Id . A V(BRJDSS 200 0.40 9.5 i 1 GATE 2 DRAIN (Connected to TAB) 3 SO U R C E 23 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) |
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d014bl3sbuz32o-220ab | |
A63A
Abstract: 74LSOO
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qq14ci14dg-1406max20-iu8+4 | |
DIVIDE-BY-256
Abstract: ONU block diagram 74LSOO HD74LS393 a63a
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hd74ls393divide-by-256qq14ci14dg-14+7 | |
74LSOO
Abstract: HD74LS490
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hd74ls490divide-by-100qq14ci14dg-14+5 | |
74LSOO
Abstract: HD74LS642 Hitachi Scans-001
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qq14ci14dg-1406max20-iu8+5 | |
74LSOOContextual Info: •Quadruple 2-input Positive NAND Gates with Open Collector Outputs •C IR C U IT S C H E M A T IC ^ ) BPIN ARRANGEMENT ■RECOMMENDED OPERATING CONDITIONS Symbol min typ max High level output voltage y oh - - 5 .5 Low level output c u rre n t IO L - - |
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25ialqq14ci14dg-1406max+4 | |
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74LSOO
Abstract: 1S2074
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-400mqq14ci14dg-1406max+5 | |
74LSOO
Abstract: HD74LS367A kl66
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hd74ls367aqq14ci14dg-1406max+5 | |
ATML U 010
Abstract: ATML H 010 1S2074 400M 74LSOO HD74LS139 OG-16 L400M ATML 010
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hd74ls139qq14ci14dg-1406max+10 | |
HD74LSoop
Abstract: 1S2074 74LSOO HD74LS195A Hitachi Scans-001 Scans-0014928
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hd74ls195aqq14ci14dg-1406max+8 | |
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Contextual Info: •Quadruple 2-input High-voltage Interface Positive NAND Gates • C IR C U IT SC H EM A TIC O ^ B P IN ARRANGEMENT ■RECOM M ENDED OPERATING CONDITIONS Item S ym bol High lev e l o u tp u t v o lta g e Voh L ow lev el o u tp u t c u r r e n t min ty p |
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74lsooib203 | |
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Contextual Info: •D u a l 4-input Positive AND Gates •PIN ARRANGEMENT ICIRCUIT SCHEMATICO^ ■ELECTRICAL CHARACTERISTICS Item Input voltage O utput voltage Symbol VlH VlL VOH V>L I ih It L ¡1 Input c u rren t S h o rt-c irc u it output c u rren t Supply c u rren t Input clam p voltage |
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t-90-1074lsooib203 | |
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Contextual Info: Integrated Device Technology, Inc* Single, double-frequency clock input 16.67MHz, 20MHz, 25M Hz and 33MHz operation 16MIPS a t2 0M H z Low cost 84-pin PLCC packaging O n-chip 4-deep write buffer elim inates memory write stalls O n-chip 4-word read buffer supports burst o r sim ple block |
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67mhz20mhz33mhz16mips+6 | |
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Contextual Info: HE8813VG GaAIAs IRED Description The HE8813VG is a 880 nm band GaAIAs infrared light emitting diode with a double heterojunction struc ture. It is suitable as a light source for still camera autofocus mechanisms. Features Package Type HE8813VG: VG • High efficiency and high power output |
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he8813vgib205gg1442fi | |
74LSOO
Abstract: HD74LS374 HD74LSoop
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hd74ls374qq14ci14dg-1406max+6 | |
1S2074
Abstract: 74LSOO HD74LS75 Hitachi Scans-001
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hd74ls75t-90-10ib2031s2074+2 | |