GFM 78 Search Results

FP2000

Abstract: GFP2000GG4S GFP3000GG45 H-29 S200 al05s AKS TI 66
Contextual Info: - 95 0 ìl H- 29 GFP2000GG r ; - 2 5 “C ¡£ : t o r n a r - GFP2000GG45 -y- ñcí ¥ VllHXM 2000 ( Vb=2250V, /riHMSi 800 (7> = 80*C) 11000 (50Hz, It s m a - b € F± = 1750V, C s = 4//F, 225000 ( t = 2 ~ 1 0m s) di/di 400 (/ g /'= 50A, P gfm 400 P gh a v i

501LT

Abstract: SG400W22 SG500FXF21 SG400EX22 SG400R22 SG400U22 3-60E3A
Contextual Info: - 77 - * S G 4 0 0 R, U, W, 3 + 3 V-, b£ <W < - •§" I rrm I drm ¡CRM ■ e * a $ ¿ti »j SG400R22 SG400U22 SG400W22 1300 | 1600 I tqrm 400 W d = V ¿ Vdrm, h RMS 150 i T /= 7 0 °C ) I tsm SG 40 0 EX2 2 I gfm P cravi /CR(RMS) P g HM Vg r m it V dm

jrm A 45

Abstract: jrm 45
Contextual Info: ; 6 A +6 6 8  78  3 2 3  5 3 9   2   2 2 A -   2 3    3 2  23  8# '8# 18 8$1 '> 1 '> ='$& 1 '> 79 1 '> +(> (* 1 '>  2  6 7 +! 33    . 2 ; 2 6 = . 7  +! 33 -('>4"   23 5 5  7  +! . . 3

B02B

Abstract: 0WS52
Contextual Info: 9?2,-.5 AC1;8<80BC@4 7867 >=E4@ @4:0F 5JGUVSJT T +;L EGD:J9Ib HB7AA 7C: <DG B?9GDL7K; DK;C x?A; +Ddpwgijkgm T hfs HL?I9>?C= 97E78?A?IN T .u ^ -ut I;GB?C7A x?A; +Ddp/kffhnjln T k}3 HJG=; 8;IL;C 9D?A 7C: 9DCI79IH x?A; +Ddpu.ufiffgffijno 2=<B02B 30B0 2=8: gs

transistor bf

Abstract: CK67 b 778 BF transistor datasheet B02B A 103 GF B 103 gf
Contextual Info: 9?F,-.-55 ;8<80BC@4 7867 >=E4@ @4:0G 5LIVWTLU R gfr GK>H8=>B< 86D67>@>H>:G R /,/0c*+b /,/0c*t 6B9 /,u0 8CB;><IF6H>CB vgiijng R k|2 9>:@:8HF>8 7:HK:B 8C>@ HC 8CBH68 R /:6@:9 z,lm ^ w@IL DFCC; HMD:G 6J6>@67@: w>@: *Cdptfhffgffgokk 2=<B02B 30B0 2=8: 30B0 tCBH68H rFF6B<:A:BH

ETU45B

Abstract: ETU27B ETU76B
Contextual Info: 1 Siemens AG 2015 Air Circuit Breakers 1/2 Introduction 1/9 1/10 1/17 1/24 1/31 1/38 1/45 3WL air circuit breakers/ non-automatic air circuit breakers up to 6300 A AC , IEC Introduction 3-pole, fixed-mounted versions 3-pole, withdrawable versions 4-pole, fixed-mounted versions

ana 608 LED

Abstract: dl304 DL-304 diode gfm ANA 608 CR02A
Contextual Info: POülEREX INC isE m m tE x i> • 7 5 cm b s i o o o 3 t m ñ ■ C D L3 Powerex, Inc., Hlllis Street, Youngwaod, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 T~ 4-l-C > 5 40 Tentative

smcj440a

Abstract: "on semiconductor" gfr marking 440 gex marking ghm SMCJ160CA SMCJ5.0A SMCJ10CA SMCJ11A SMCJ11CA SMCJ440CA
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

smcj15a

Abstract: 710 gee marking GFQ marking code GDD SMCJ8.5A 218 GFM 218 Gex GEX 610
Contextual Info: 3DT ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Type Modified "J" Bend Lead Device Marking Code Breakdown Voltage (Volts) (Note 1) (MIN / MAX) SMCJ5.0 SMCJ5.0A SMCJ6.0 SMCJ6.0A SMCJ6.5 SMCJ6.5A SMCJ7.0 SMCJ7.0A SMCJ7.5 SMCJ7.5A SMCJ8.0

CAPACITOR 106 25K

Abstract: PS 55 5kVp draloric ring capacitor
Contextual Info: Table of Contents Ceramic RF-Power Capacitors Ceramic High Voltage Capacitors CONTENTS MODEL NUMBER General Information, Ceramic RF-Power Capacitors PLATE CAPACITORS Plate Plate Plate Plate Plate Plate capacitors capacitors capacitors capacitors capacitors

737 gez on

Abstract: BFK 78 GFM 78 BDP 281 SMCJ30CA 2430 GET IC GFK GFP SMCJ33CA GFM 65 GFM 45
Contextual Info: IM IC O N D U C TQ R tm - SMCJ170 C A SMCJ5.0(C)A - SMCJ 170(C)A Features • Glass passivated junction. • 1500 W Peak Pulse Power capability on 10/1000 |^s waveform . • Excellent clam ping capability. • Low increm ental surge resistance. • Fast response tim e; typically less

PWB60A40

Abstract: PWB80A40 H-17 PWB60A PWB60A30 PWB80A PWB80A30
Contextual Info: — y x * i# m PW B60A 0 # « a » — s ttt- = t t * * - x s 6 * !* a r / - K ä i I1 M i 275 • * * h K ^ PW B60A30 fÎ PW B60A40 IE ^ S I Í (T , = 2 5 -C i aw Æ £ « ft ft* Vä SM 360 480 V I rrm T j =150°C, Vääm 10 mA VfiÄAf 300 400 V I d rm

alps tc 103b

Abstract: LM 9015 CC11VCA CC11VCD CF11VCA CF11VCD CF11VCF
Contextual Info: — 103 — a • W B H ft* C C I IV 'J * 9 Æ H -2 7 r ü ffle o iÊ f lf c # ^ M Â H W tt ¡fC nil ?■ ccnvcA CC11VCD 2000 2300 V'dâ .W /mv> /T RMS I tsm 600 200 30 V g fm V A 5 6 A ! fis -40-125 !± m n 1800(Min) V er r ,= 2 5 °C , ^ f’t' Min T yp

Contextual Info: SMCJ5.0 C A - SMCJ170(C)A 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER SEMICONDUCTOR Features • • • • • • • 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available

bfm 2 TERMINAL DIODE

Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction

marking BFP

Contextual Info: LESHAN RADIO COMPANY, LTD. SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES For surface mounted applications in order to optimize board space Low profile package Built-in strain relief STAND-OFF VOLTAGE - 5.0 TO 440 Volts Glass passivated junction Low inductance

gde 103

Abstract: gde marking 307 GDE TRANSZORB gem gfx 77 marking GHS ggk 75 GHR TVS GGR 55 GFR 310
Contextual Info: SMCJ5.0A thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo 0.185 MAX. (4.69 MAX.)

4081A

Abstract: H-17 H-18 H-19 H-22 359RGA
Contextual Info: — 272 — IM ' 7 . 9 • t ÿ a - j v PK25GB, KK25GB m tñ = — oGI -OKI • * * S » IH M ® ni ^ t t * * PK 2 5 G B -4 0 , KK25GB-40 PK 25 G B-8 0 , K K25GB-80 # ÍÍ ill'j 5¿ ÍE £ ft f t '] ' «íi K ft* iíL 4 mA Vd= Vdrm 4 mA Tj = 125’C , Itm = 75A

SMCJ170A

Abstract: bfk 5a
Contextual Info: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic

129 gez

Abstract: SMCJ170A
Contextual Info: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic

SMCJ20A

Abstract: SMCJ170A gdz 79 SMCJ30A SMCJ90A 514 bfp smcj15a
Contextual Info: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic

marking ghm

Abstract: SMCJ5.0A SMCJ10A SMCJ11A SMCJ12A SMCJ13A SMCJ14A SMCJ15A SMCJ16A SMCJ17A
Contextual Info: SMCJ SERIES GLASS PASSIVATED SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 5.0 to 170 Volts Peak Pulse Power-1500 Watts SMC / DO-214AB FEATURES 0.245 6.22 0.125(3.17) 0.220(5.59) 0.115(2.92) * Glass passivated chip * 1500 W peak pulse power capability with a 10/1000 µs wavefrom,

Contextual Info: SMCJ SERIES DATA SHEET SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 to 440 Volts 1500 Watt Peak Pulse Power FEATURE — For surface mounted applications in order to optimize board space. — Low profile package. — Built-in strain relief. — Glass passivated junction.

GGG 92

Contextual Info: SMCJ SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSOR – SMCJ SERIES FEATURE — — — — — — — — — — — For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance.