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    GERMAN DIODE Search Results

    GERMAN DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    GERMAN DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Applications Handbook for Wired telecom systems, IC03b

    Contextual Info: Philips Semiconductors Product specification Versatile speech/dialler/ringer with music-on-hold TEA1069; TEA1069A FEATURES - pulse or DTMF mode selection Speech part - register recall earth and flash times - keyboard layout selection - selection for german requirements


    OCR Scan     		PDF

    40 watt telephone ring generator circuit

    Abstract: MH88612 telephone ring led indicator 40 watt telephone ring generator 24VDC relay drive current "Crosspoint Switch" ic relay 24v pabx ring generator relay 5v ring ic
    Contextual Info:  MH88520-1 German Subscriber Line Interface Circuit SLIC Preliminary Information Features April 1995 ISSUE 4 • Differential to single ended conversion • Transformerless 2-2 wire conversion • Minimum installation space • Off-Hook detection and LED indicator drive


    Original     		MH88520-1 MH88520-1 -24VDC 40 watt telephone ring generator circuit MH88612 telephone ring led indicator 40 watt telephone ring generator 24VDC relay drive current "Crosspoint Switch" ic relay 24v pabx ring generator relay 5v ring ic PDF

    HA-1370 AUDIO AMPLIFIER

    Contextual Info: ^ M MH88400 Line Interface Circuit T T E L Preliminary Information ISSUE 4 Features • • • • • • • • • • • January 1994 Ordering Information FAX and Modem interface Suitable for V.29 FAX & V.22 bis Data Allows caller identification Variant match German, UK, 600C2 & 900i2


    OCR Scan     		MH88400 600C2 900i2 MH88400-1 14-Pin MH88400-2 MH88400-3 MH88400-4 HA-1370 AUDIO AMPLIFIER PDF

    BAS16HT1

    Contextual Info: ON Semiconductort Switching Diode BAS16HT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 200 mW 1.57 mW/°C RθJA 635


    Original     		BAS16HT1 OD323 r14525 BAS16HT1/D BAS16HT1 PDF

    Diode SOd-123 marking cu

    Abstract: MBR130T1 MBR130T3 Marking "s3" Schottky barrier
    Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original     		MBR130T1, MBR130T3 r14525 MBR130T1/D Diode SOd-123 marking cu MBR130T1 MBR130T3 Marking "s3" Schottky barrier PDF

    MBR4045PT

    Abstract: B4045 800TC Diode MBR4045PT
    Contextual Info: MBR4045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR4045PT r14525 MBR4045PT/D MBR4045PT B4045 800TC Diode MBR4045PT PDF

    diode marking 74 SOD123

    Abstract: schottky diode sod-123 marking code 120 schottky diode sod-123 marking code 12 MBR0530T1 MBR0530T3 diode sod-123 marking code 120
    Contextual Info: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original     		MBR0530T1, MBR0530T3 r14525 MBR0530T1/D diode marking 74 SOD123 schottky diode sod-123 marking code 120 schottky diode sod-123 marking code 12 MBR0530T1 MBR0530T3 diode sod-123 marking code 120 PDF

    B3045

    Abstract: 1N5817 2N2222 2N6277 MBR3045PT
    Contextual Info: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for


    Original     		MBR3045PT r14525 MBR3045PT/D B3045 1N5817 2N2222 2N6277 MBR3045PT PDF

    marking B14 diode

    Abstract: b14 smb diode
    Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS140T3 r14525 MBRS140T3/D marking B14 diode b14 smb diode PDF

    MTP20N15E

    Contextual Info: MTP20N15E Preferred Device Power MOSFET 20 Amps, 150 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		MTP20N15E r14525 MTP20N15E/D MTP20N15E PDF

    U320

    Abstract: MURD320 MURD320T4
    Contextual Info: MURD320 Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: http://onsemi.com


    Original     		MURD320 r14525 MURD320/D U320 MURD320 MURD320T4 PDF

    B3045

    Abstract: MBR3045ST
    Contextual Info: MBR3045ST Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR3045ST r14525 MBR3045ST/D B3045 MBR3045ST PDF

    b20100

    Abstract: MBR20100CTP b20100p B2010 diode device data on semiconductor
    Contextual Info: MBR20100CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • 20 Amps Total 10 Amps per Diode Leg Guardring for Stress Protection


    Original     		MBR20100CTP r14525 MBR20100CTP/D b20100 MBR20100CTP b20100p B2010 diode device data on semiconductor PDF

    NTQS6466

    Abstract: NTQS6466R2
    Contextual Info: NTQS6466 Product Preview Power MOSFET 6.8 Amps, 20 Volts N–Channel TSSOP–8 Features • • • • • • • http://onsemi.com New Low Profile TSSOP–8 Package Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery


    Original     		NTQS6466 r14525 NTQS6466/D NTQS6466 NTQS6466R2 PDF

    80SQ045N

    Abstract: 80SQ045NRL MBR845
    Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		80SQ045N r14525 80SQ045N/D 80SQ045N 80SQ045NRL MBR845 PDF

    of Traffic signal

    Abstract: ST-017 Pedestrian traffic lights opto InGan green 12mm traffic light system traffic lights project led lifespan Traffic Light Control Circuit pcb circuit st017 SMT TRANSISTOR 5D
    Contextual Info: Application notes for traffic signals A mong the versatile applications of Light Emitting Diodes LED the industries demand for utilizing these light sources for traffic technology pointed out a new application area. Traffic management technology has experienced a


    Original     		PDF

    DIODE smd marking N7

    Abstract: CS1009 CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LM136Z LT1009 LT1009CZ
    Contextual Info: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature


    Original     		CS1009 CS1009 CS1009GZ LT1009CZ LM136Z r14525 CS1009/D DIODE smd marking N7 CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LT1009 PDF

    MMDF3N06VL

    Abstract: MMDF3N06VLR2
    Contextual Info: MMDF3N06VL Product Preview Power MOSFET 3 Amps, 60 Volts N–Channel SO–8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and


    Original     		MMDF3N06VL r14525 MMDF3N06VL/D MMDF3N06VL MMDF3N06VLR2 PDF

    BAL99LT1

    Contextual Info: ON Semiconductort Switching Diode BAL99LT1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc 3 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300


    Original     		BAL99LT1 236AB) r14525 BAL99LT1/D BAL99LT1 PDF

    B2030

    Abstract: 2n22222 1N5817 2N2222 2N6277 MBR2030CTL B-2030
    Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.


    Original     		MBR2030CTL r14525 MBR2030CTL/D B2030 2n22222 1N5817 2N2222 2N6277 MBR2030CTL B-2030 PDF

    BAS116LT1

    Abstract: BAS116LT3
    Contextual Info: ON Semiconductort Switching Diode BAS116LT1 This switching diode has the following features: ON Semiconductor Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel


    Original     		BAS116LT1 BAS116LT1 BAS116LT3 inch/10 236AB) r14525 BAS116LT1/D PDF

    BAS70LT1

    Contextual Info: ON Semiconductort BAS70LT1 SCHOTTKY Barrier Diodes ON Semiconductor Preferred Device These SCHOTTKY barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature


    Original     		BAS70LT1 r14525 BAS70LT1/D BAS70LT1 PDF

    BAV74LT1

    Contextual Info: ON Semiconductort Monolithic Dual Switching Diode BAV74LT1 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic


    Original     		BAV74LT1 236AB) r14525 BAV74LT1/D BAV74LT1 PDF

    BAS21SLT1

    Contextual Info: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage


    Original     		BAS21SLT1 r14525 BAS21SLT1/D BAS21SLT1 PDF