GENERAL SEMICONDUCTOR MARKING UM Search Results

Contextual Info: UM142XX 300mA, Low Consumption, Wide Input Voltage Linear Regulator UM142XXS SOT23-3 UM142XXY SOT89-3 UM142XXB SOT89-3 General Description The UM142XX series are a group of positive voltage output, high precise, high PSRR and low power consumption voltage regulator. The output voltages are selectable in 100mV steps within a

Contextual Info: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit

Contextual Info: UM5080/H Low Capacitance Bidirectional Single Line TVS Protection Diode UM5080/H DFN2 1.0x0.6/CSP 1.0×0.6 General Description The UM5080/H TVS protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional

Contextual Info: UM5075 Single Line ESD Protection Diode Array UM5075 SOD523 General Description The UM5075 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional

Contextual Info: UM8515 20V P-Channel Power MOSFET UM8515 SOT23-6 General Description The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-6 package.

Contextual Info: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

Contextual Info: UM70XX Voltage Detector UM70XX TO-92/SOT23-3 General Description The UM70XX series are a set of three-terminal low power voltage detectors implemented in CMOS technology. Each voltage detector in the series detects a particular fixed voltage ranging from 2.4V to 5V. The voltage detectors consist of a high-precision voltage divider circuit, band

Contextual Info: UM177XX 500mA, Micropower, VLDO Linear Regulator UM177XX QFN2020-6 General Description The UM177XX series are VLDO very low dropout linear regulators designed for low power portable applications. Typical output noise is only 75 VRMS and maximum dropout is just 400mV

Contextual Info: UM6401 6 Line ESD/EMI Protection for Color LCD Interfaces UM6401 DFN12 3 X 1.6 General Description The UM6401 is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic

Contextual Info: UM4401 4 Line ESD/EMI Protection for Color LCD Interfaces UM4401 DFN8 2.1 X 1.6 General Description The UM4401 is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable

WC SOT23-3

Abstract: 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2
Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

419B-02

Abstract: SMD310
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

Contextual Info: UM3157 10Ω Low-Voltage SPDT Analog Switch UM3157 SC70-6/SC88/SOT363 General Description The UM3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDS ON resistances while maintaining

CMUT4401

Abstract: CMUT4403
Contextual Info: Central CMUT4401 NPN CMUT4403 PNP COMPLEMENTARY SILICON TRANSISTORS SOT-523 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature

2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

Contextual Info: UM375XX 300mA, Micropower, VLDO Linear Regulator UM375XXS SOT23-5 UM375XXP SOT353 General Description The UM375XX series are VLDO very low dropout linear regulators designed for low power portable applications. Typical output noise is only 100 VRMS and maximum dropout is just

MARKING W3 SOT23 TRANSISTOR

Abstract: SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor marking 2A H

Contextual Info: TO S H IB A TPC8115 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIV TPC8115 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package

Contextual Info: T O S H IB A TPC8208 TO SH IB A FIE LD E F F E C T T R A N SIS TO R SILICO N N CHANNEL MOS T Y P E U-M O SIH TENTATIVE] TPC8208 Lithium Ion Battery Applications High Speed and High Efficiency DC-D C Converters Note Book PC .Portable Equipments Applications

tpc8040

Abstract: TPC8040-H
Contextual Info: TPC8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8040-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to a small and thin package •

TPC8021

Abstract: TPC8021-H
Contextual Info: TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSIII TPC8021-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package

TPC8035

Abstract: toshiba 7800 TPC8035-H
Contextual Info: TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • High-speed switching

TPC8039

Abstract: TPC8039-H
Contextual Info: TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8039-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching

TPC8036

Abstract: TPC8036-H
Contextual Info: TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching