GENERAL SEMICONDUCTOR MARKING UJ Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Ss 8210

Abstract: 045 83.2 TI YEAR OF MANUFACTURE toshiba ta 8210
Contextual Info: TPC 8210 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UjM O S - _ IT - N T S iT \S f t _ T PC8 2 1 0 — Unit: mm Lithium Ion Battery Applications Note Book PC Portable Equipments Applications •Low drain-source ON resistance

Contextual Info: FGB20N60SFD 600 V, 20 A Field Stop IGBT Features Applications • High Current Capability • Solar Inverter, UPS, Welder, PFC • Low Saturation Voltage: VCE sat = 2.2 V @ IC = 20 A General Description • High Input Impedance • Fast Switching : EOFF = 8 uJ/A

2n2907 TO-92

Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Contextual Info: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure

FGAF40N60UFTU

Contextual Info: FGAF40N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

TLP759F

Abstract: IEC68 TLP759 VDE0109 VDE0884 TLP759F O DVE 0884
Contextual Info: TOSHIBA TLP759 D4 TOSHIBA PHOTOCOUPLER TLP759(D4) ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP759, TLP759F Type designations for ‘Option : (D4)\ which are tested under VDE0884 requirements. Ex. : TLP759 (D4-0) Note : Use Toshiba standard type number for safety standard application.

FGA40N60UFD

Abstract: FGA40N60
Contextual Info: FGA40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features General Description • • • • • Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,

0/PDP-2N-1000

Contextual Info: FGP90N30 300V, 90A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.

G2N60

Abstract: G2N6 G2N60UF SGM2N60UF transistors sot-223 06a sGm2N60
Contextual Info: SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

2SA1362

Abstract: A1362
Contextual Info: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage

FGD3N60UNDF

Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
Contextual Info: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us

GENERAL SEMICONDUCTOR MARKING UJ

Contextual Info: FGAF40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

2SC3441

Abstract: 2SA1366
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3441 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3441 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING 2-5 -0.3 designed with high collector current, high voltage.

120N30

Contextual Info: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where

fdpf085n10a

Contextual Info: FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 mΩ Features General Description • RDS on = 6.5 mΩ ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

fgh30s

Contextual Info: FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching

Contextual Info: FGA20S140P 1400 V, 20 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching

voltage detection induction cooker

Abstract: induction cooker mechanical design
Contextual Info: FGA50S110P 1100 V, 50 A Shorted-anode IGBT Features General Description • Intrinsic Anti-parallel Diode for Soft-switching Applications Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications.

Contextual Info: FGA30S120P 1200 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode Trench IGBTs offer superior conduction and switching performances for soft switching

Contextual Info: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching

Contextual Info: FGA15S125P 1250 V, 15 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications.

FGD4536

Abstract: FGD4536TM fgd453
Contextual Info: FGD4536 360 V PDP Trench IGBT Features General Description • High Current Capability Using novel trench IGBT technology, Fairchild ’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and